JP6611817B2 - レーザーパターニングを用いたシャドーマスクの製造装置およびレーザーパターニングを用いたシャドーマスクの製造方法 - Google Patents
レーザーパターニングを用いたシャドーマスクの製造装置およびレーザーパターニングを用いたシャドーマスクの製造方法 Download PDFInfo
- Publication number
- JP6611817B2 JP6611817B2 JP2017548446A JP2017548446A JP6611817B2 JP 6611817 B2 JP6611817 B2 JP 6611817B2 JP 2017548446 A JP2017548446 A JP 2017548446A JP 2017548446 A JP2017548446 A JP 2017548446A JP 6611817 B2 JP6611817 B2 JP 6611817B2
- Authority
- JP
- Japan
- Prior art keywords
- masking
- laser beam
- pattern
- laser
- shadow mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 102
- 238000000059 patterning Methods 0.000 title claims description 46
- 230000000873 masking effect Effects 0.000 claims description 194
- 238000000034 method Methods 0.000 claims description 60
- 230000003287 optical effect Effects 0.000 claims description 55
- 230000010363 phase shift Effects 0.000 claims description 47
- 238000012545 processing Methods 0.000 claims description 20
- 230000005540 biological transmission Effects 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 230000009467 reduction Effects 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 230000006641 stabilisation Effects 0.000 claims description 7
- 238000011105 stabilization Methods 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 description 20
- 239000010408 film Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 231100000481 chemical toxicant Toxicity 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0036810 | 2015-03-17 | ||
KR1020150036810A KR101582175B1 (ko) | 2015-03-17 | 2015-03-17 | 레이저 패터닝을 이용한 섀도우 마스크의 제조 장치 및 레이저 패터닝을 이용한 섀도우 마스크의 제조 방법 |
PCT/KR2015/014069 WO2016148380A1 (ko) | 2015-03-17 | 2015-12-22 | 레이저 패터닝을 이용한 섀도우 마스크의 제조 장치 및 레이저 패터닝을 이용한 섀도우 마스크의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018511829A JP2018511829A (ja) | 2018-04-26 |
JP6611817B2 true JP6611817B2 (ja) | 2019-11-27 |
Family
ID=55164789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017548446A Active JP6611817B2 (ja) | 2015-03-17 | 2015-12-22 | レーザーパターニングを用いたシャドーマスクの製造装置およびレーザーパターニングを用いたシャドーマスクの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6611817B2 (ko) |
KR (1) | KR101582175B1 (ko) |
CN (1) | CN107427964B (ko) |
TW (1) | TWI616262B (ko) |
WO (1) | WO2016148380A1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102411536B1 (ko) * | 2017-10-11 | 2022-06-22 | 삼성디스플레이 주식회사 | 증착 마스크 제조방법 및 제조장치 |
KR20190055295A (ko) * | 2017-11-14 | 2019-05-23 | 삼성디스플레이 주식회사 | 마스크 제조 장치 및 마스크 제조 방법 |
KR102100361B1 (ko) * | 2018-08-22 | 2020-04-13 | 주식회사 코윈디에스티 | 금속 마스크 생산 장치 |
KR102236541B1 (ko) * | 2018-10-22 | 2021-04-07 | 주식회사 오럼머티리얼 | 마스크의 제조 방법, 마스크 지지 템플릿의 제조 방법 및 프레임 일체형 마스크의 제조 방법 |
KR20200055871A (ko) | 2018-11-13 | 2020-05-22 | 삼성디스플레이 주식회사 | 기판 식각 방법 |
CN109702329A (zh) * | 2019-03-06 | 2019-05-03 | 广东工业大学 | 一种阵列式激光加工方法 |
KR20210102523A (ko) * | 2020-02-10 | 2021-08-20 | 삼성디스플레이 주식회사 | 전자 장치 제조 방법 |
CN111618443A (zh) * | 2020-05-06 | 2020-09-04 | 湖北工业大学 | 碳纤维树脂基复合材料绿光超快激光加工系统及方法 |
KR20210142049A (ko) | 2020-05-15 | 2021-11-24 | 삼성디스플레이 주식회사 | 표시 장치, 마스크 조립체, 표시 장치의 제조장치 및 표시 장치의 제조방법 |
CN113463045B (zh) * | 2021-06-11 | 2022-10-14 | 华中科技大学 | 一种激光脉冲沉积系统及加工方法 |
CN113399829B (zh) * | 2021-07-09 | 2022-11-11 | 东莞市中麒光电技术有限公司 | 焊接装置及使用该焊接装置的焊接方法 |
CN114161003B (zh) * | 2021-11-10 | 2024-06-21 | 成都拓米电子装备制造有限公司 | 一种utg激光钻孔装置及其钻孔方法 |
WO2023084681A1 (ja) * | 2021-11-11 | 2023-05-19 | ギガフォトン株式会社 | レーザ加工システム、レーザ加工方法、及び電子デバイスの製造方法 |
CN114758942B (zh) * | 2022-03-24 | 2023-05-30 | 中国科学院光电技术研究所 | 一种反应离子刻蚀掩膜 |
CN116967613A (zh) * | 2023-09-21 | 2023-10-31 | 上海传芯半导体有限公司 | 去除废掩模表面金属薄膜的装置及方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5378137A (en) * | 1993-05-10 | 1995-01-03 | Hewlett-Packard Company | Mask design for forming tapered inkjet nozzles |
JP2003334674A (ja) * | 2002-03-13 | 2003-11-25 | Sony Corp | レーザ加工方法 |
US6797440B2 (en) * | 2002-08-06 | 2004-09-28 | Freescale Semiconductor, Inc. | Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device |
JP4393790B2 (ja) * | 2003-05-15 | 2010-01-06 | 三菱電機株式会社 | レーザ加工機 |
KR100724540B1 (ko) * | 2006-12-26 | 2007-06-04 | (주)큐엠씨 | 레이저 빔 전달 시스템 및 그 방법과 레이저 리프트 오프방법 |
JP5092446B2 (ja) * | 2007-02-26 | 2012-12-05 | パナソニック株式会社 | レーザー加工用マスク |
JP5134603B2 (ja) * | 2009-09-09 | 2013-01-30 | 株式会社日立ハイテクノロジーズ | 光ビーム調整方法及び光ビーム調整装置 |
KR101097331B1 (ko) * | 2010-01-28 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 박막 증착용 마스크의 제조 방법 |
WO2011102124A1 (ja) | 2010-02-16 | 2011-08-25 | 日東電工株式会社 | 複合分離膜およびこれを用いた分離膜エレメント |
EP2750164B1 (en) * | 2011-08-25 | 2018-08-01 | Toppan Printing Co., Ltd. | Reflective mask and method for manufacturing same |
KR101353434B1 (ko) * | 2011-10-17 | 2014-01-21 | 주식회사 엘지화학 | 유기전자소자용 기판 |
KR20130108027A (ko) * | 2012-03-23 | 2013-10-02 | 주식회사 엘지화학 | 유기전자소자용 기판의 제조방법 |
US9535316B2 (en) * | 2013-05-14 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask with three states for forming multiple layer patterns with a single exposure |
-
2015
- 2015-03-17 KR KR1020150036810A patent/KR101582175B1/ko active IP Right Grant
- 2015-12-22 JP JP2017548446A patent/JP6611817B2/ja active Active
- 2015-12-22 WO PCT/KR2015/014069 patent/WO2016148380A1/ko active Application Filing
- 2015-12-22 CN CN201580077730.4A patent/CN107427964B/zh active Active
-
2016
- 2016-02-22 TW TW105105083A patent/TWI616262B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR101582175B1 (ko) | 2016-01-05 |
TWI616262B (zh) | 2018-03-01 |
TW201639651A (zh) | 2016-11-16 |
JP2018511829A (ja) | 2018-04-26 |
WO2016148380A1 (ko) | 2016-09-22 |
CN107427964B (zh) | 2019-06-25 |
CN107427964A (zh) | 2017-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6611817B2 (ja) | レーザーパターニングを用いたシャドーマスクの製造装置およびレーザーパターニングを用いたシャドーマスクの製造方法 | |
JP6357312B2 (ja) | 成膜マスクの製造方法及び成膜マスク | |
KR20070100963A (ko) | 노광 방법 및 툴 | |
US6949215B2 (en) | Method for processing a three-dimensional structure by laser | |
CN107229182B (zh) | 图案修正方法、光掩模及其制造方法以及修正膜形成装置 | |
JP6616841B2 (ja) | レーザーを用いた3次元パターニング方法 | |
KR20180012388A (ko) | 복합 가공 방법을 이용한 섀도우 마스크의 제조방법 및 이에 의해 제조된 섀도우 마스크 | |
JP2009537324A (ja) | 移動する基板上の薄膜をパターニングするための方法およびツール | |
WO2015166759A1 (ja) | ビーム整形マスク、レーザ加工装置及びレーザ加工方法 | |
US7964036B2 (en) | Crystallization apparatus and crystallization method | |
TWI546147B (zh) | 用於照射半導體材料之裝置及其用途 | |
JP2019086709A (ja) | 露光システム、露光方法、及び表示用パネル基板の製造方法 | |
KR20130052520A (ko) | 노광 장치 및 노광 방법 | |
KR20130098838A (ko) | 레이저 가공 장치, 레이저 가공 방법 및 레이저 가공 프로그램을 기록한 컴퓨터가 판독 가능한 기록 매체 | |
TW201832857A (zh) | 雷射照射裝置及薄膜電晶體的製造方法 | |
US20140308768A1 (en) | Laser-induced thermal imaging apparatus, method of laser-induced thermal imaging, and manufacturing method of organic light-emitting display apparatus using the method | |
JP6761479B2 (ja) | レーザ照射装置、薄膜トランジスタおよび薄膜トランジスタの製造方法 | |
JP2009006339A (ja) | レーザ加工装置、及び、レーザ加工方法 | |
JP2004319581A (ja) | パターン描画装置及びパターン描画方法 | |
JP2009119491A (ja) | 光ビーム分岐装置、照射装置、光ビームの分岐方法、電子デバイスの製造方法、および精密部品の製造方法 | |
JP2008105046A (ja) | ビーム照射方法、及び、ビーム照射装置 | |
TW201327063A (zh) | 用於製造基材表面上的週期結構之方法 | |
JP7520615B2 (ja) | マーク形成方法、パターン形成方法、及びリソグラフィ装置 | |
KR20140059913A (ko) | 마스크리스 노광장비 및 이를 이용한 크로스토크 검사방법 | |
KR102012297B1 (ko) | 멀티빔 스캐너 시스템을 이용한 패턴 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170914 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190220 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190402 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190701 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191001 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191029 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6611817 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |