JP6610577B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6610577B2 JP6610577B2 JP2017023458A JP2017023458A JP6610577B2 JP 6610577 B2 JP6610577 B2 JP 6610577B2 JP 2017023458 A JP2017023458 A JP 2017023458A JP 2017023458 A JP2017023458 A JP 2017023458A JP 6610577 B2 JP6610577 B2 JP 6610577B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating resin
- nickel
- resin layer
- alsi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 66
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 154
- 229910052759 nickel Inorganic materials 0.000 claims description 76
- 239000011347 resin Substances 0.000 claims description 75
- 229920005989 resin Polymers 0.000 claims description 75
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 15
- 230000035882 stress Effects 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
12:上部電極板
14:はんだ層
16:銅ブロック
18:はんだ層
20:半導体基板
22:はんだ層
24:下部電極板
26:樹脂層
30:AlSi層
32:第1ニッケル層
34:第2ニッケル層
36:絶縁樹脂層
36a:端部
Claims (1)
- 半導体基板と、
前記半導体基板の表面を覆うAlSi層と、
前記AlSi層の表面を覆う第1ニッケル層と、
前記第1ニッケル層の表面の一部を覆う絶縁樹脂層と、
前記絶縁樹脂層の表面の少なくとも一部を覆い、前記絶縁樹脂層上から前記絶縁樹脂層に覆われていない範囲の前記第1ニッケル層まで伸びている第2ニッケル層、
を有する半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017023458A JP6610577B2 (ja) | 2017-02-10 | 2017-02-10 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017023458A JP6610577B2 (ja) | 2017-02-10 | 2017-02-10 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018129485A JP2018129485A (ja) | 2018-08-16 |
JP6610577B2 true JP6610577B2 (ja) | 2019-11-27 |
Family
ID=63173145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017023458A Active JP6610577B2 (ja) | 2017-02-10 | 2017-02-10 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6610577B2 (ja) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4049035B2 (ja) * | 2003-06-27 | 2008-02-20 | 株式会社デンソー | 半導体装置の製造方法 |
JP3661695B2 (ja) * | 2003-07-11 | 2005-06-15 | 株式会社デンソー | 半導体装置 |
JP4501533B2 (ja) * | 2004-05-31 | 2010-07-14 | 株式会社デンソー | 半導体装置の製造方法 |
JP5549118B2 (ja) * | 2009-05-27 | 2014-07-16 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
WO2015107796A1 (ja) * | 2014-01-20 | 2015-07-23 | 三菱電機株式会社 | 半導体素子およびその製造方法、ならびに半導体装置 |
JP6094533B2 (ja) * | 2014-06-09 | 2017-03-15 | トヨタ自動車株式会社 | 半導体装置 |
JP6249933B2 (ja) * | 2014-12-10 | 2017-12-20 | 三菱電機株式会社 | 半導体素子、半導体装置および半導体素子の製造方法 |
JP2016143804A (ja) * | 2015-02-03 | 2016-08-08 | トヨタ自動車株式会社 | 半導体装置 |
-
2017
- 2017-02-10 JP JP2017023458A patent/JP6610577B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018129485A (ja) | 2018-08-16 |
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