JP6590772B2 - 弾性波デバイスとその製造方法 - Google Patents

弾性波デバイスとその製造方法 Download PDF

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Publication number
JP6590772B2
JP6590772B2 JP2016174064A JP2016174064A JP6590772B2 JP 6590772 B2 JP6590772 B2 JP 6590772B2 JP 2016174064 A JP2016174064 A JP 2016174064A JP 2016174064 A JP2016174064 A JP 2016174064A JP 6590772 B2 JP6590772 B2 JP 6590772B2
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JP
Japan
Prior art keywords
region
wiring layer
acoustic wave
substrate
bonding
Prior art date
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Expired - Fee Related
Application number
JP2016174064A
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English (en)
Japanese (ja)
Other versions
JP2018042072A (ja
JP2018042072A5 (enExample
Inventor
高志 山下
高志 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP2016174064A priority Critical patent/JP6590772B2/ja
Priority to US15/686,621 priority patent/US11271542B2/en
Publication of JP2018042072A publication Critical patent/JP2018042072A/ja
Publication of JP2018042072A5 publication Critical patent/JP2018042072A5/ja
Application granted granted Critical
Publication of JP6590772B2 publication Critical patent/JP6590772B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2016174064A 2016-09-06 2016-09-06 弾性波デバイスとその製造方法 Expired - Fee Related JP6590772B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016174064A JP6590772B2 (ja) 2016-09-06 2016-09-06 弾性波デバイスとその製造方法
US15/686,621 US11271542B2 (en) 2016-09-06 2017-08-25 Acoustic wave device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016174064A JP6590772B2 (ja) 2016-09-06 2016-09-06 弾性波デバイスとその製造方法

Publications (3)

Publication Number Publication Date
JP2018042072A JP2018042072A (ja) 2018-03-15
JP2018042072A5 JP2018042072A5 (enExample) 2018-04-26
JP6590772B2 true JP6590772B2 (ja) 2019-10-16

Family

ID=61280945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016174064A Expired - Fee Related JP6590772B2 (ja) 2016-09-06 2016-09-06 弾性波デバイスとその製造方法

Country Status (2)

Country Link
US (1) US11271542B2 (enExample)
JP (1) JP6590772B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7541324B2 (ja) * 2020-04-13 2024-08-28 三安ジャパンテクノロジー株式会社 弾性波デバイスパッケージ
US12199584B2 (en) 2021-04-16 2025-01-14 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator fabrication using wafer-to-wafer bonding
US12308818B2 (en) * 2023-01-03 2025-05-20 Win Semiconductors Corp. Surface acoustic wave device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079638A (ja) 1996-09-05 1998-03-24 Oki Electric Ind Co Ltd 表面弾性波フィルタ及びその製造方法
JP2004304622A (ja) 2003-03-31 2004-10-28 Fujitsu Media Device Kk 弾性表面波デバイス及びその製造方法
JP2005026630A (ja) 2003-07-03 2005-01-27 Nec Electronics Corp 半導体装置及びその製造方法
JP2006319211A (ja) 2005-05-13 2006-11-24 Sharp Corp 半導体チップの実装構造
JP5686943B2 (ja) * 2008-09-17 2015-03-18 太陽誘電株式会社 弾性波デバイス及びその製造方法
WO2013078438A1 (en) * 2011-11-23 2013-05-30 Microvention, Inc. Embolic device with shaped wire
JP2013121711A (ja) * 2011-12-12 2013-06-20 Canon Inc 記録装置、および記録方法
JP2013131711A (ja) * 2011-12-22 2013-07-04 Taiyo Yuden Co Ltd 電子部品
JP6106404B2 (ja) * 2012-10-30 2017-03-29 太陽誘電株式会社 電子部品モジュール
JP6472945B2 (ja) * 2013-06-13 2019-02-20 太陽誘電株式会社 弾性波デバイス

Also Published As

Publication number Publication date
JP2018042072A (ja) 2018-03-15
US20180069526A1 (en) 2018-03-08
US11271542B2 (en) 2022-03-08

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