JP6461036B2 - 弾性波デバイス - Google Patents
弾性波デバイス Download PDFInfo
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- JP6461036B2 JP6461036B2 JP2016076882A JP2016076882A JP6461036B2 JP 6461036 B2 JP6461036 B2 JP 6461036B2 JP 2016076882 A JP2016076882 A JP 2016076882A JP 2016076882 A JP2016076882 A JP 2016076882A JP 6461036 B2 JP6461036 B2 JP 6461036B2
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- piezoelectric substrate
- acoustic wave
- resonators
- idt
- electrode fingers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
11 支持基板
12 金属膜
14 電極指
18 櫛型電極
20、42 弾性波共振器
21 IDT
22 反射器
30 端子
32 ビア配線
34、44 配線
35、45 パッド
36 バンプ
38、60 環状封止部
Claims (8)
- 第1圧電基板と、
複数の第1電極指を有し、前記第1圧電基板の第1面に設けられた第1IDTと、
前記第1面上に設けられた第2圧電基板と、
前記第1面と空隙を介し対向する前記第2圧電基板の面である第2面に設けられ、前記複数の第1電極指と非平行な複数の第2電極指を有する第2IDTと、
を具備する弾性波デバイス。 - 前記複数の第1電極指と前記複数の第2電極指の平面視においてなす角度は30°以上かつ150°以下である請求項1記載の弾性波デバイス。
- 前記複数の第1電極指と前記複数の第2電極指の平面視においてなす角度は略90°である請求項1記載の弾性波デバイス。
- 前記第1IDTと前記第2IDTとの距離は、前記第1圧電基板の厚さおよび前記第2圧電基板の厚さの少なくとも一方より小さい請求項1から3のいずれか一項記載の弾性波デバイス。
- 前記第1IDTおよび前記第2IDTを囲むように設けられ、前記第1IDTおよび前記第2IDTを前記空隙に封止する環状封止部を具備する請求項1から4のいずれか一項記載の弾性波デバイス。
- 前記第1電極指の延伸方向に配列した複数の前記第1IDTと、
前記第2電極指の延伸方向に配列した複数の前記第2IDTと、を具備する請求項1から5のいずれか一項記載の弾性波デバイス。 - 前記複数の第1IDTは直列に接続され、前記複数の第2IDTは直列に接続されている請求項6記載の弾性波デバイス。
- 前記第1圧電基板上に設けられ、共通端子と送信端子との間に直列に接続された複数の第1直列共振器と、前記共通端子と前記送信端子との間に並列に接続された1または複数の第1並列共振器と、を有する送信フィルタと、
前記第2圧電基板上に設けられ、前記共通端子と受信端子との間に直列に接続された複数の第2直列共振器と、前記共通端子と前記受信端子との間に並列に接続された1または複数の第2並列共振器と、を有する受信フィルタと、
を具備し、
前記複数の第1直列共振器はそれぞれ前記複数の第1IDTを含み、
前記複数の第2直列共振器はそれぞれ前記複数の第2IDTを含む請求項6記載の弾性波デバイス。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016076882A JP6461036B2 (ja) | 2016-04-06 | 2016-04-06 | 弾性波デバイス |
US15/454,951 US10396757B2 (en) | 2016-04-06 | 2017-03-09 | Acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016076882A JP6461036B2 (ja) | 2016-04-06 | 2016-04-06 | 弾性波デバイス |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017188807A JP2017188807A (ja) | 2017-10-12 |
JP2017188807A5 JP2017188807A5 (ja) | 2018-03-22 |
JP6461036B2 true JP6461036B2 (ja) | 2019-01-30 |
Family
ID=59998852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016076882A Active JP6461036B2 (ja) | 2016-04-06 | 2016-04-06 | 弾性波デバイス |
Country Status (2)
Country | Link |
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US (1) | US10396757B2 (ja) |
JP (1) | JP6461036B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018123447A1 (ja) * | 2016-12-26 | 2018-07-05 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンドモジュールおよび通信装置 |
JP6534406B2 (ja) * | 2017-03-21 | 2019-06-26 | 太陽誘電株式会社 | マルチプレクサ |
KR102306240B1 (ko) * | 2017-04-17 | 2021-09-30 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치 |
JP7084739B2 (ja) | 2018-02-21 | 2022-06-15 | 太陽誘電株式会社 | マルチプレクサ |
JP7068902B2 (ja) * | 2018-04-09 | 2022-05-17 | 太陽誘電株式会社 | マルチプレクサ |
TWI677951B (zh) * | 2018-11-09 | 2019-11-21 | 恆勁科技股份有限公司 | 表面聲波濾波器封裝結構及其製作方法 |
JP7426196B2 (ja) * | 2019-03-15 | 2024-02-01 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法、フィルタ及びマルチプレクサ |
JP7343992B2 (ja) * | 2019-03-20 | 2023-09-13 | 太陽誘電株式会社 | フィルタおよびマルチプレクサ |
KR20200118610A (ko) * | 2019-04-08 | 2020-10-16 | 삼성전기주식회사 | 음향 공진기 필터 패키지 |
JP7441010B2 (ja) * | 2019-05-21 | 2024-02-29 | 太陽誘電株式会社 | 弾性波デバイス、フィルタおよびマルチプレクサ |
JP7347989B2 (ja) * | 2019-08-13 | 2023-09-20 | 太陽誘電株式会社 | マルチプレクサ |
US11581870B2 (en) * | 2019-09-27 | 2023-02-14 | Skyworks Solutions, Inc. | Stacked acoustic wave resonator package with laser-drilled VIAS |
JP2023004705A (ja) * | 2021-06-28 | 2023-01-17 | 太陽誘電株式会社 | 弾性波デバイス、フィルタおよびマルチプレクサ |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11136081A (ja) | 1997-10-27 | 1999-05-21 | Kyocera Corp | 弾性表面波装置 |
JP2004179979A (ja) * | 2002-11-27 | 2004-06-24 | Toyo Commun Equip Co Ltd | 複合フィルタおよびこれを用いた携帯電話機 |
WO2005060094A1 (ja) * | 2003-12-16 | 2005-06-30 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
WO2006008940A1 (ja) | 2004-07-20 | 2006-01-26 | Murata Manufacturing Co., Ltd. | 圧電フィルタ |
US20070011507A1 (en) * | 2005-06-03 | 2007-01-11 | Intel Corporation | System and method for remote system support |
DE102005026243B4 (de) | 2005-06-07 | 2018-04-05 | Snaptrack, Inc. | Elektrisches Bauelement und Herstellungsverfahren |
JP2007067617A (ja) * | 2005-08-30 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 共用器及びそれを用いた通信機器 |
JP4697232B2 (ja) * | 2006-01-11 | 2011-06-08 | 株式会社村田製作所 | 弾性表面波装置の製造方法及び弾性表面波装置 |
WO2009119007A1 (ja) * | 2008-03-27 | 2009-10-01 | 株式会社村田製作所 | 弾性波フィルタ装置 |
CN102959860B (zh) * | 2011-04-12 | 2016-03-23 | 天工松下滤波方案日本有限公司 | 弹性波元件和使用它的天线共用器 |
US8610518B1 (en) * | 2011-05-18 | 2013-12-17 | Triquint Semiconductor, Inc. | Elastic guided wave coupling resonator filter and associated manufacturing |
JP5873307B2 (ja) * | 2011-11-21 | 2016-03-01 | 太陽誘電株式会社 | フィルタおよび分波器 |
WO2015040921A1 (ja) * | 2013-09-17 | 2015-03-26 | 株式会社村田製作所 | デュプレクサ |
US9634641B2 (en) * | 2013-11-06 | 2017-04-25 | Taiyo Yuden Co., Ltd. | Electronic module having an interconnection substrate with a buried electronic device therein |
JP6335476B2 (ja) * | 2013-11-06 | 2018-05-30 | 太陽誘電株式会社 | モジュール |
-
2016
- 2016-04-06 JP JP2016076882A patent/JP6461036B2/ja active Active
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2017
- 2017-03-09 US US15/454,951 patent/US10396757B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20170294895A1 (en) | 2017-10-12 |
JP2017188807A (ja) | 2017-10-12 |
US10396757B2 (en) | 2019-08-27 |
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