JP6585322B1 - 有機el表示装置及びその製造方法 - Google Patents
有機el表示装置及びその製造方法 Download PDFInfo
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- 239000004020 conductor Substances 0.000 claims abstract description 53
- 239000010949 copper Substances 0.000 claims abstract description 36
- 239000010936 titanium Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
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- 230000004913 activation Effects 0.000 description 1
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- 150000001340 alkali metals Chemical class 0.000 description 1
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- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
Description
次に、図1に示される有機EL表示装置について具体的に説明がされる。
実施例1
次に、図1に示される有機EL表示装置の製造方法が、図2A〜2Bのフローチャート及び図3A〜3Gの製造工程の図を参照しながら説明される。
図2A〜2B及び図3A〜3Gに示される実施例1の製造方法は、平坦化膜30が無機絶縁膜31と有機絶縁膜32が連続して形成され、一括してコンタクト孔30aが形成されたが、有機絶縁膜32として、感光性の有機絶縁膜32が形成され、無機絶縁膜31が形成された後に、第1コンタクト孔30a1が形成され、その後に感光性の有機絶縁膜32が形成され、露光と現像によって第2コンタクト孔30a2が形成され、コンタクト孔30aとされてもよい。その例が、図4A〜4Bに示されている。
(1)本発明の一実施形態に係る有機EL表示装置は、薄膜トランジスタを含む駆動回路が形成された表面を有する基板と、前記駆動回路を覆うことによって前記基板の前記表面を平坦化する平坦化膜と、前記平坦化膜の表面上に形成され、前記駆動回路と接続された第1電極、前記第1電極の上に形成された有機発光層、及び前記有機発光層の上に形成された第2電極を有する有機発光素子と、を備え、前記平坦化膜は、前記薄膜トランジスタの上に積層された無機絶縁膜及び有機絶縁膜の2層構造からなり、かつ、前記コンタクト孔の内部にチタン層及び銅層を含む導体層が埋め込まれると共に、前記導体層と電気的に接続して前記第1電極が形成されている。
20 TFT
21 半導体層
30 平坦化膜
31 無機絶縁膜
32 有機絶縁膜
33 第2無機絶縁膜
40 有機発光素子
41 第1電極(陽極)
410 導体層
411 Ti層
412 Cu層
413 Ag又はAPC層
414 ITO層
43 有機発光層
44 第2電極(陰極)
Claims (8)
- 薄膜トランジスタを含む駆動回路が形成された表面を有する基板と、
前記駆動回路を覆うことによって前記基板の前記表面を平坦化する平坦化膜と、
前記平坦化膜の表面上に形成され、前記駆動回路と接続された第1電極、前記第1電極の上に形成された有機発光層、及び前記有機発光層の上に形成された第2電極を有する有機発光素子と、
を備え、
前記平坦化膜は、前記薄膜トランジスタの上に積層された無機絶縁膜及び有機絶縁膜の2層構造からなり、かつ、
前記駆動回路と前記第1電極との接続が前記平坦化膜に形成されたコンタクト孔の内部に埋め込まれた導体層を介して行われ、かつ、前記導体層がチタン層及び銅層を含み、前記導体層と電気的に接続して前記第1電極が形成されており、
前記導体層の表面と前記平坦化膜の表面が研磨によって面一で、かつ、算術平均粗さRaで20nm以上、50nm以下に形成され、この表面にほぼ同じ表面粗さの前記第1電極及び前記有機発光層が形成されることによって、前記有機発光層の表面が微視的に見ても発光面の凹凸による傾斜面が存在しないように形成されている、有機EL表示装置。 - 前記有機絶縁膜が、感光性樹脂である、請求項1に記載の有機EL表示装置。
- 前記第1電極がAg層又はAPC層とITO層を含む、請求項1又は2に記載の有機EL表示装置。
- 前記第1電極が、前記コンタクト孔内に埋め込まれた前記導体層の上に形成されている、請求項1〜3のいずれか1項に記載の有機EL表示装置。
- 前記第1電極のAg層又はAPC層が前記コンタクト孔の内部に埋め込まれた前記チタン層又は銅層と接続され、前記ITO層が前記有機発光層との界面に形成されている、請求項3又は請求項3を引用する請求項4に記載の有機EL表示装置。
- 基板の上に、薄膜トランジスタを含む駆動回路を形成する工程と、
前記駆動回路の表面に無機絶縁膜と有機絶縁膜を含む平坦化膜を形成した後、前記平坦化膜に前記薄膜トランジスタの一部を露出させるコンタクト孔を形成する工程と、
前記コンタクト孔の内面及び前記有機絶縁膜の表面にチタン層及び銅層からなる導体層を形成する工程と、
前記有機絶縁膜の表面上の前記導体層を研磨によって除去し、さらに前記コンタクト孔の内部の前記導体層の表面並びに前記有機絶縁膜の表面をCMP研磨することによって、前記導体層の表面と前記平坦化膜の表面が面一で、かつ、算術平均粗さRaで20nm以上、50nm以下に平坦化する工程と、
前記有機絶縁膜の表面に前記コンタクト孔の内部に形成された前記導体層と接続されると共に、この平坦化された表面とほぼ同じ表面粗さの第1電極を形成する工程と、
前記第1電極の上に前記第1電極の表面粗さとほぼ同じ表面粗さで、微視的に見ても発光面の凹凸による傾斜面が存在しない有機発光層を形成する工程と、
前記有機発光層の上に第2電極を形成する工程と、
を含む有機EL表示装置の製造方法。 - 前記第1電極の形成工程において、Ag膜又はAPC膜を成膜した後、ITO膜を成膜してからパターニングする、請求項6に記載の製造方法。
- 前記CMP研磨を、酸化セリウム(CeO2)、シリカ(SiO2)又はアルミナ(Al2O3)の微粒子からなる研磨剤を用いて行う、請求項6又は7に記載の製造方法。
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