JP2010032838A - 表示装置および表示装置の製造方法 - Google Patents
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- GZEFZLXJPGMRSP-UHFFFAOYSA-N 37,38,39,40-tetrazanonacyclo[28.6.1.13,10.112,19.121,28.04,9.013,18.022,27.031,36]tetraconta-1(37),2,4,6,8,10,12(39),13,15,17,19,21,23,25,27,29,31,33,35-nonadecaene Chemical compound c1ccc2c3cc4[nH]c(cc5nc(cc6[nH]c(cc(n3)c2c1)c1ccccc61)c1ccccc51)c1ccccc41 GZEFZLXJPGMRSP-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】半導体素子(21,22)および有機EL素子24が設けられるとともに、電源に接続される金属基板301と、半導体素子(21,22)および有機EL素子24と、金属基板301との間に設けられ、コンタクトホール4aが形成された層間絶縁膜3と、コンタクトホール4a内に形成され、ソース電極8a,8d、ドレイン電極8b,8cおよび有機EL素子24のアノード電極12のうちの少なくともいずれか一つと、金属基板301とを電気的に接続するコンタクト内配線4と、を備えた。
【選択図】 図3
Description
以下、本発明の実施の形態について説明する。図1は、本実施の形態にかかる有機EL表示装置のブロック図の一例を示す図である。図1に示すように、本実施の形態にかかる有機EL表示装置は、ディスプレイパネル603、およびこれに接続する走査駆動部604、データ駆動部605、駆動電圧生成部607、並びにこれらを制御する信号制御部606を有する。ディスプレイパネル603は、走査駆動部604に接続し各走査信号Vgを伝達する走査信号線G1〜Gn、およびデータ駆動部605に接続し各データ信号Vdを伝達するデータ信号線D1〜Dmなどの複数の信号線に接続されている。各走査信号線G1〜Gnは、略行方向に延伸しており、各データ信号線D1〜Dmは、略列方向に延伸している。ディスプレイパネル603は、走査信号線G1〜Gnおよび各データ信号線D1〜Dmにそれぞれ接続するように行列状に配列された複数の画素を備える。
4,7a,7b,11,111,204,207a,207b,211 コンタクト内配線
4a,7c,7d,11a,204a,207c,207d,211a コンタクトホール
5a,5b ゲート電極
5c,5d 接続膜
6 ゲート絶縁膜
8a,8d,108d ソース電極
8b,8c,108c ドレイン電極
9a,9b 半導体膜
10,110 層間絶縁膜
12 アノード電極
13 有機膜
14 カソード電極
16 保護膜
17 上部基板
21 スイッチングトランジスタ
22 駆動トランジスタ
23 キャパシタ
24 有機EL素子
300,400 画素
300a 表示領域
300b はみ出し領域
301 金属基板
318 絶縁膜
603 ディスプレイパネル
604 走査駆動部
605 データ駆動部
606 信号制御部
607 駆動電圧生成部
Claims (5)
- ゲート電極とソース電極とドレイン電極と前記ソース電極および前記ドレイン電極の間に形成された半導体膜とを含む半導体素子と、電極を含みかつ前記半導体素子に電気的に接続された発光素子と、を備えた表示装置であって、
電源に接続される金属基板と、
前記半導体素子および前記発光素子と、前記金属基板との間に設けられ、コンタクトホールが形成された層間絶縁膜と、
前記コンタクトホール内に形成され、前記ソース電極、前記ドレイン電極および前記発光素子の前記電極のうちの少なくともいずれか一つと、前記金属基板とを電気的に接続するコンタクト内配線と、
を備えたことを特徴とする表示装置。 - 前記半導体膜は、無機酸化物半導体材料から構成されることを特徴とする請求項1に記載の表示装置。
- 前記半導体膜は、有機半導体材料から構成されることを特徴とする請求項1に記載の表示装置。
- 前記発光素子は、有機エレクトロルミネッセンス素子であることを特徴とする請求項1〜3のいずれか一つに記載の表示装置。
- ゲート電極とソース電極とドレイン電極と前記ソース電極および前記ドレイン電極の間に形成された半導体膜とを含む半導体素子と、電極を有しかつ前記半導体素子に電気的に接続された発光素子と、を備えた表示装置の製造方法であって、
電源に接続される金属基板上に層間絶縁膜を形成する層間絶縁膜形成工程と、
前記層間絶縁膜を貫通し、一端が前記金属基板に電気的に接続されたコンタクト内配線を形成するコンタクト内配線形成工程と、
前記層間絶縁膜を基準にして前記基板側とは反対側に、前記ソース電極と前記ドレイン電極と前記発光素子の前記電極とを形成する電極形成工程と、
を含み、
前記電極形成工程では、前記ソース電極、前記ドレイン電極および前記発光素子の電極のうちの少なくともいずれか一つと、前記コンタクト内配線の他端とが電気的に接続されるように、該ソース電極、該ドレイン電極および該発光素子の電極を形成することを特徴とする表示装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008195773A JP2010032838A (ja) | 2008-07-30 | 2008-07-30 | 表示装置および表示装置の製造方法 |
KR1020117002213A KR20110055528A (ko) | 2008-07-30 | 2009-07-22 | 표시 장치 및 표시 장치의 제조 방법 |
US13/055,411 US20110127514A1 (en) | 2008-07-30 | 2009-07-22 | Display device and method for manufacturing display device |
CN200980129526.7A CN102105924B (zh) | 2008-07-30 | 2009-07-22 | 显示装置以及显示装置的制造方法 |
EP09802869.9A EP2312561A4 (en) | 2008-07-30 | 2009-07-22 | DISPLAY DEVICE AND METHOD FOR PRODUCING A DISPLAY DEVICE |
PCT/JP2009/063123 WO2010013626A1 (ja) | 2008-07-30 | 2009-07-22 | 表示装置および表示装置の製造方法 |
TW098125480A TW201013921A (en) | 2008-07-30 | 2009-07-29 | Display device and method for making a display device |
Applications Claiming Priority (1)
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JP2008195773A JP2010032838A (ja) | 2008-07-30 | 2008-07-30 | 表示装置および表示装置の製造方法 |
Publications (1)
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JP2010032838A true JP2010032838A (ja) | 2010-02-12 |
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ID=41610325
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JP2008195773A Pending JP2010032838A (ja) | 2008-07-30 | 2008-07-30 | 表示装置および表示装置の製造方法 |
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Country | Link |
---|---|
US (1) | US20110127514A1 (ja) |
EP (1) | EP2312561A4 (ja) |
JP (1) | JP2010032838A (ja) |
KR (1) | KR20110055528A (ja) |
CN (1) | CN102105924B (ja) |
TW (1) | TW201013921A (ja) |
WO (1) | WO2010013626A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011148409A1 (ja) * | 2010-05-24 | 2011-12-01 | パナソニック株式会社 | 薄膜半導体装置、表示装置及び薄膜半導体装置の製造方法 |
JP2015144616A (ja) * | 2009-09-18 | 2015-08-13 | 大塚製薬株式会社 | エクオール産生能が維持されたエクオール産生微生物を含む発酵製品、及びその製造方法 |
JP2015175921A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社ジャパンディスプレイ | 表示装置 |
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KR101642620B1 (ko) | 2009-07-10 | 2016-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
WO2013051236A1 (ja) * | 2011-10-05 | 2013-04-11 | パナソニック株式会社 | 表示装置 |
US8941148B2 (en) * | 2012-03-06 | 2015-01-27 | Infineon Technologies Austria Ag | Semiconductor device and method |
TW201415685A (zh) * | 2012-10-12 | 2014-04-16 | Ultimate Image Corp | 有機發光二極體照明裝置 |
FR2999018B1 (fr) * | 2012-11-30 | 2016-01-22 | Commissariat Energie Atomique | Ecran d'affichage a diodes electroluminescentes organiques |
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JP6169005B2 (ja) * | 2014-01-17 | 2017-07-26 | 株式会社ジャパンディスプレイ | 発光素子表示装置 |
JP6372084B2 (ja) | 2014-01-22 | 2018-08-15 | セイコーエプソン株式会社 | 発光装置、及び電子機器 |
KR20180031846A (ko) * | 2016-09-19 | 2018-03-29 | 삼성디스플레이 주식회사 | 표시 장치 |
JP2019049595A (ja) * | 2017-09-08 | 2019-03-28 | 株式会社Joled | 表示装置 |
US10991778B2 (en) * | 2018-03-28 | 2021-04-27 | Sakai Display Products Corporation | Organic EL display apparatus and manufacturing method therefor |
CN111584577A (zh) * | 2020-05-14 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
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- 2009-07-22 WO PCT/JP2009/063123 patent/WO2010013626A1/ja active Application Filing
- 2009-07-22 US US13/055,411 patent/US20110127514A1/en not_active Abandoned
- 2009-07-22 KR KR1020117002213A patent/KR20110055528A/ko not_active Application Discontinuation
- 2009-07-22 CN CN200980129526.7A patent/CN102105924B/zh not_active Expired - Fee Related
- 2009-07-29 TW TW098125480A patent/TW201013921A/zh unknown
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JP2015144616A (ja) * | 2009-09-18 | 2015-08-13 | 大塚製薬株式会社 | エクオール産生能が維持されたエクオール産生微生物を含む発酵製品、及びその製造方法 |
WO2011148409A1 (ja) * | 2010-05-24 | 2011-12-01 | パナソニック株式会社 | 薄膜半導体装置、表示装置及び薄膜半導体装置の製造方法 |
JP2015175921A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社ジャパンディスプレイ | 表示装置 |
US9792854B2 (en) | 2014-03-13 | 2017-10-17 | Japan Display Inc. | Display device |
Also Published As
Publication number | Publication date |
---|---|
EP2312561A4 (en) | 2013-05-22 |
WO2010013626A1 (ja) | 2010-02-04 |
KR20110055528A (ko) | 2011-05-25 |
CN102105924B (zh) | 2014-07-23 |
US20110127514A1 (en) | 2011-06-02 |
CN102105924A (zh) | 2011-06-22 |
EP2312561A1 (en) | 2011-04-20 |
TW201013921A (en) | 2010-04-01 |
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