JP6584249B2 - プラズマ処理チャンバの構成部品を洗浄する湿式洗浄工程 - Google Patents

プラズマ処理チャンバの構成部品を洗浄する湿式洗浄工程 Download PDF

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Publication number
JP6584249B2
JP6584249B2 JP2015178095A JP2015178095A JP6584249B2 JP 6584249 B2 JP6584249 B2 JP 6584249B2 JP 2015178095 A JP2015178095 A JP 2015178095A JP 2015178095 A JP2015178095 A JP 2015178095A JP 6584249 B2 JP6584249 B2 JP 6584249B2
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Prior art keywords
component
applying
components
processing chamber
material deposited
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Japanese (ja)
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JP2016063226A (ja
JP2016063226A5 (enExample
Inventor
アーメン・アボヤン
ケネット・バイロン
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Lam Research Corp
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Lam Research Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2015178095A 2014-09-17 2015-09-10 プラズマ処理チャンバの構成部品を洗浄する湿式洗浄工程 Active JP6584249B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462051920P 2014-09-17 2014-09-17
US62/051,920 2014-09-17
US14/525,118 US9406534B2 (en) 2014-09-17 2014-10-27 Wet clean process for cleaning plasma processing chamber components
US14/525,118 2014-10-27

Publications (3)

Publication Number Publication Date
JP2016063226A JP2016063226A (ja) 2016-04-25
JP2016063226A5 JP2016063226A5 (enExample) 2018-10-18
JP6584249B2 true JP6584249B2 (ja) 2019-10-02

Family

ID=55455446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015178095A Active JP6584249B2 (ja) 2014-09-17 2015-09-10 プラズマ処理チャンバの構成部品を洗浄する湿式洗浄工程

Country Status (5)

Country Link
US (1) US9406534B2 (enExample)
JP (1) JP6584249B2 (enExample)
KR (1) KR20160033056A (enExample)
CN (1) CN105428210B (enExample)
TW (1) TWI693651B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190070639A1 (en) * 2017-09-07 2019-03-07 Applied Materials, Inc. Automatic cleaning machine for cleaning process kits
KR102461911B1 (ko) * 2018-07-13 2022-10-31 삼성전자주식회사 플라즈마 제네레이터, 이를 포함하는 세정수 처리 장치, 반도체 세정 장치 및 세정수 처리 방법
US11488848B2 (en) * 2018-07-31 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated semiconductor die vessel processing workstations
US12060636B2 (en) * 2018-09-21 2024-08-13 Lam Research Corporation Method for conditioning a plasma processing chamber
KR102156980B1 (ko) * 2018-11-28 2020-09-16 배기백 차량의 크롬몰딩 복원방법
KR102024757B1 (ko) * 2019-02-15 2019-09-24 (주)에이텍솔루션 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102027183B1 (ko) * 2019-03-08 2019-10-01 (주)에이텍솔루션 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법
US20230023764A1 (en) * 2019-12-17 2023-01-26 Applied Materials, Inc. Surface profiling and texturing of chamber components
CN111534825B (zh) * 2020-05-14 2022-05-31 富乐德科技发展（大连）有限公司 去除半导体设备不锈钢部件钛及氮化钛沉积膜的工艺
US20210391150A1 (en) * 2020-06-10 2021-12-16 Plasma-Therm Llc Plasma Source Configuration
US12237186B2 (en) * 2022-09-15 2025-02-25 Applied Materials, Inc. On-board cleaning of tooling parts in hybrid bonding tool

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100265289B1 (ko) * 1998-01-26 2000-09-15 윤종용 플라즈마식각장치의 캐소우드 제조방법 및 이에 따라 제조되는 캐소우드
KR100445273B1 (ko) * 2001-10-26 2004-08-21 손정하 세라믹 절연체의 세정방법
ATE472172T1 (de) * 2002-04-17 2010-07-15 Lam Res Corp Verfahren zur herstellung einer silizium- elektrode für plasma-reaktionskammer
US6902628B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7077918B2 (en) * 2004-01-29 2006-07-18 Unaxis Balzers Ltd. Stripping apparatus and method for removal of coatings on metal surfaces
US20090142247A1 (en) * 2007-12-03 2009-06-04 Applied Materials, Inc. Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide
MX347701B (es) * 2008-05-02 2017-05-09 Oerlikon Surface Solutions Ag Pfäffikon Procedimiento para decapar piezas de trabajo y solucion de decapado.
US8075701B2 (en) * 2008-06-30 2011-12-13 Lam Research Corporation Processes for reconditioning multi-component electrodes
US8734586B2 (en) * 2012-02-02 2014-05-27 Sematech, Inc. Process for cleaning shield surfaces in deposition systems

Also Published As

Publication number Publication date
JP2016063226A (ja) 2016-04-25
CN105428210A (zh) 2016-03-23
CN105428210B (zh) 2018-06-15
US20160079096A1 (en) 2016-03-17
US9406534B2 (en) 2016-08-02
TWI693651B (zh) 2020-05-11
KR20160033056A (ko) 2016-03-25
TW201626486A (zh) 2016-07-16

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