TWI693651B - 用以清洗電漿處理室元件的溼式清洗程序 - Google Patents

用以清洗電漿處理室元件的溼式清洗程序 Download PDF

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Publication number
TWI693651B
TWI693651B TW104130517A TW104130517A TWI693651B TW I693651 B TWI693651 B TW I693651B TW 104130517 A TW104130517 A TW 104130517A TW 104130517 A TW104130517 A TW 104130517A TW I693651 B TWI693651 B TW I693651B
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TW
Taiwan
Prior art keywords
processing chamber
plasma processing
cleaning
components
hno
Prior art date
Application number
TW104130517A
Other languages
English (en)
Chinese (zh)
Other versions
TW201626486A (zh
Inventor
亞門 雅維言
肯尼特 貝隆
Original Assignee
美商蘭姆研究公司
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Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201626486A publication Critical patent/TW201626486A/zh
Application granted granted Critical
Publication of TWI693651B publication Critical patent/TWI693651B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW104130517A 2014-09-17 2015-09-16 用以清洗電漿處理室元件的溼式清洗程序 TWI693651B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462051920P 2014-09-17 2014-09-17
US62/051,920 2014-09-17
US14/525,118 US9406534B2 (en) 2014-09-17 2014-10-27 Wet clean process for cleaning plasma processing chamber components
US14/525,118 2014-10-27

Publications (2)

Publication Number Publication Date
TW201626486A TW201626486A (zh) 2016-07-16
TWI693651B true TWI693651B (zh) 2020-05-11

Family

ID=55455446

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104130517A TWI693651B (zh) 2014-09-17 2015-09-16 用以清洗電漿處理室元件的溼式清洗程序

Country Status (5)

Country Link
US (1) US9406534B2 (enExample)
JP (1) JP6584249B2 (enExample)
KR (1) KR20160033056A (enExample)
CN (1) CN105428210B (enExample)
TW (1) TWI693651B (enExample)

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US20190070639A1 (en) * 2017-09-07 2019-03-07 Applied Materials, Inc. Automatic cleaning machine for cleaning process kits
KR102461911B1 (ko) * 2018-07-13 2022-10-31 삼성전자주식회사 플라즈마 제네레이터, 이를 포함하는 세정수 처리 장치, 반도체 세정 장치 및 세정수 처리 방법
US11488848B2 (en) * 2018-07-31 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated semiconductor die vessel processing workstations
US12060636B2 (en) * 2018-09-21 2024-08-13 Lam Research Corporation Method for conditioning a plasma processing chamber
KR102156980B1 (ko) * 2018-11-28 2020-09-16 배기백 차량의 크롬몰딩 복원방법
KR102024757B1 (ko) * 2019-02-15 2019-09-24 (주)에이텍솔루션 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102027183B1 (ko) * 2019-03-08 2019-10-01 (주)에이텍솔루션 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102814564B1 (ko) * 2019-12-17 2025-05-28 어플라이드 머티어리얼스, 인코포레이티드 챔버 컴포넌트들의 표면 프로파일링 및 텍스처링
CN111534825B (zh) * 2020-05-14 2022-05-31 富乐德科技发展（大连）有限公司 去除半导体设备不锈钢部件钛及氮化钛沉积膜的工艺
US20210391150A1 (en) * 2020-06-10 2021-12-16 Plasma-Therm Llc Plasma Source Configuration
US12237186B2 (en) * 2022-09-15 2025-02-25 Applied Materials, Inc. On-board cleaning of tooling parts in hybrid bonding tool
CN118988887A (zh) * 2024-09-26 2024-11-22 安徽富乐德科技发展股份有限公司 一种带有复杂的空腔结构的shower head的清洗工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150762A (en) * 1998-01-26 2000-11-21 Samsung Electronics Co., Ltd. Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby
US6902627B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Cleaning chamber surfaces to recover metal-containing compounds

Family Cites Families (8)

* Cited by examiner, † Cited by third party
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KR100445273B1 (ko) * 2001-10-26 2004-08-21 손정하 세라믹 절연체의 세정방법
AU2003220446A1 (en) * 2002-04-17 2003-11-03 Lam Research Corporation Silicon parts for plasma reaction chambers
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7077918B2 (en) * 2004-01-29 2006-07-18 Unaxis Balzers Ltd. Stripping apparatus and method for removal of coatings on metal surfaces
US20090142247A1 (en) * 2007-12-03 2009-06-04 Applied Materials, Inc. Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide
KR101599085B1 (ko) * 2008-05-02 2016-03-14 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 트뤼프바흐 워크피스를 박리하는 방법 및 박리 용액
US8075701B2 (en) * 2008-06-30 2011-12-13 Lam Research Corporation Processes for reconditioning multi-component electrodes
US8734586B2 (en) * 2012-02-02 2014-05-27 Sematech, Inc. Process for cleaning shield surfaces in deposition systems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150762A (en) * 1998-01-26 2000-11-21 Samsung Electronics Co., Ltd. Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby
US6902627B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Cleaning chamber surfaces to recover metal-containing compounds

Also Published As

Publication number Publication date
JP2016063226A (ja) 2016-04-25
JP6584249B2 (ja) 2019-10-02
US9406534B2 (en) 2016-08-02
CN105428210A (zh) 2016-03-23
KR20160033056A (ko) 2016-03-25
TW201626486A (zh) 2016-07-16
CN105428210B (zh) 2018-06-15
US20160079096A1 (en) 2016-03-17

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