CN105428210B - 用于清洁等离子体工艺室部件的湿法清洁工艺 - Google Patents
用于清洁等离子体工艺室部件的湿法清洁工艺 Download PDFInfo
- Publication number
- CN105428210B CN105428210B CN201510593168.2A CN201510593168A CN105428210B CN 105428210 B CN105428210 B CN 105428210B CN 201510593168 A CN201510593168 A CN 201510593168A CN 105428210 B CN105428210 B CN 105428210B
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- plasma process
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Links
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- 230000008569 process Effects 0.000 title claims abstract description 84
- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 68
- 229910017604 nitric acid Inorganic materials 0.000 claims description 44
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 230000003647 oxidation Effects 0.000 claims description 33
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 30
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 22
- 239000012286 potassium permanganate Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- OQVYMXCRDHDTTH-UHFFFAOYSA-N 4-(diethoxyphosphorylmethyl)-2-[4-(diethoxyphosphorylmethyl)pyridin-2-yl]pyridine Chemical compound CCOP(=O)(OCC)CC1=CC=NC(C=2N=CC=C(CP(=O)(OCC)OCC)C=2)=C1 OQVYMXCRDHDTTH-UHFFFAOYSA-N 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 36
- 239000008367 deionised water Substances 0.000 description 22
- 229910021641 deionized water Inorganic materials 0.000 description 22
- 239000007789 gas Substances 0.000 description 17
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
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- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
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- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- YBCVMFKXIKNREZ-UHFFFAOYSA-N acoh acetic acid Chemical compound CC(O)=O.CC(O)=O YBCVMFKXIKNREZ-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
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- 238000002242 deionisation method Methods 0.000 description 1
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- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005007 materials handling Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
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- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
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- 238000007493 shaping process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- ing And Chemical Polishing (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462051920P | 2014-09-17 | 2014-09-17 | |
| US62/051,920 | 2014-09-17 | ||
| US14/525,118 US9406534B2 (en) | 2014-09-17 | 2014-10-27 | Wet clean process for cleaning plasma processing chamber components |
| US14/525,118 | 2014-10-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105428210A CN105428210A (zh) | 2016-03-23 |
| CN105428210B true CN105428210B (zh) | 2018-06-15 |
Family
ID=55455446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510593168.2A Active CN105428210B (zh) | 2014-09-17 | 2015-09-17 | 用于清洁等离子体工艺室部件的湿法清洁工艺 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9406534B2 (enExample) |
| JP (1) | JP6584249B2 (enExample) |
| KR (1) | KR20160033056A (enExample) |
| CN (1) | CN105428210B (enExample) |
| TW (1) | TWI693651B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190070639A1 (en) * | 2017-09-07 | 2019-03-07 | Applied Materials, Inc. | Automatic cleaning machine for cleaning process kits |
| KR102461911B1 (ko) * | 2018-07-13 | 2022-10-31 | 삼성전자주식회사 | 플라즈마 제네레이터, 이를 포함하는 세정수 처리 장치, 반도체 세정 장치 및 세정수 처리 방법 |
| US11488848B2 (en) * | 2018-07-31 | 2022-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated semiconductor die vessel processing workstations |
| US12060636B2 (en) * | 2018-09-21 | 2024-08-13 | Lam Research Corporation | Method for conditioning a plasma processing chamber |
| KR102156980B1 (ko) * | 2018-11-28 | 2020-09-16 | 배기백 | 차량의 크롬몰딩 복원방법 |
| KR102024757B1 (ko) * | 2019-02-15 | 2019-09-24 | (주)에이텍솔루션 | 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| KR102027183B1 (ko) * | 2019-03-08 | 2019-10-01 | (주)에이텍솔루션 | 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| US20230023764A1 (en) * | 2019-12-17 | 2023-01-26 | Applied Materials, Inc. | Surface profiling and texturing of chamber components |
| CN111534825B (zh) * | 2020-05-14 | 2022-05-31 | 富乐德科技发展（大连）有限公司 | 去除半导体设备不锈钢部件钛及氮化钛沉积膜的工艺 |
| US20210391150A1 (en) * | 2020-06-10 | 2021-12-16 | Plasma-Therm Llc | Plasma Source Configuration |
| US12237186B2 (en) * | 2022-09-15 | 2025-02-25 | Applied Materials, Inc. | On-board cleaning of tooling parts in hybrid bonding tool |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150762A (en) * | 1998-01-26 | 2000-11-21 | Samsung Electronics Co., Ltd. | Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby |
| US6902627B2 (en) * | 2002-11-25 | 2005-06-07 | Applied Materials, Inc. | Cleaning chamber surfaces to recover metal-containing compounds |
| CN102016122A (zh) * | 2008-05-02 | 2011-04-13 | 欧瑞康贸易股份公司(特吕巴赫) | 从工件上脱层的方法及脱层溶液 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100445273B1 (ko) * | 2001-10-26 | 2004-08-21 | 손정하 | 세라믹 절연체의 세정방법 |
| ATE472172T1 (de) * | 2002-04-17 | 2010-07-15 | Lam Res Corp | Verfahren zur herstellung einer silizium- elektrode für plasma-reaktionskammer |
| US7045072B2 (en) * | 2003-07-24 | 2006-05-16 | Tan Samantha S H | Cleaning process and apparatus for silicate materials |
| US7077918B2 (en) * | 2004-01-29 | 2006-07-18 | Unaxis Balzers Ltd. | Stripping apparatus and method for removal of coatings on metal surfaces |
| US20090142247A1 (en) * | 2007-12-03 | 2009-06-04 | Applied Materials, Inc. | Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide |
| US8075701B2 (en) * | 2008-06-30 | 2011-12-13 | Lam Research Corporation | Processes for reconditioning multi-component electrodes |
| US8734586B2 (en) * | 2012-02-02 | 2014-05-27 | Sematech, Inc. | Process for cleaning shield surfaces in deposition systems |
-
2014
- 2014-10-27 US US14/525,118 patent/US9406534B2/en active Active
-
2015
- 2015-09-10 JP JP2015178095A patent/JP6584249B2/ja active Active
- 2015-09-16 TW TW104130517A patent/TWI693651B/zh active
- 2015-09-16 KR KR1020150131195A patent/KR20160033056A/ko not_active Withdrawn
- 2015-09-17 CN CN201510593168.2A patent/CN105428210B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150762A (en) * | 1998-01-26 | 2000-11-21 | Samsung Electronics Co., Ltd. | Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby |
| US6902627B2 (en) * | 2002-11-25 | 2005-06-07 | Applied Materials, Inc. | Cleaning chamber surfaces to recover metal-containing compounds |
| CN102016122A (zh) * | 2008-05-02 | 2011-04-13 | 欧瑞康贸易股份公司(特吕巴赫) | 从工件上脱层的方法及脱层溶液 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016063226A (ja) | 2016-04-25 |
| CN105428210A (zh) | 2016-03-23 |
| JP6584249B2 (ja) | 2019-10-02 |
| US20160079096A1 (en) | 2016-03-17 |
| US9406534B2 (en) | 2016-08-02 |
| TWI693651B (zh) | 2020-05-11 |
| KR20160033056A (ko) | 2016-03-25 |
| TW201626486A (zh) | 2016-07-16 |
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