JP6582630B2 - 基板分断装置及び基板分断方法 - Google Patents

基板分断装置及び基板分断方法 Download PDF

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Publication number
JP6582630B2
JP6582630B2 JP2015134087A JP2015134087A JP6582630B2 JP 6582630 B2 JP6582630 B2 JP 6582630B2 JP 2015134087 A JP2015134087 A JP 2015134087A JP 2015134087 A JP2015134087 A JP 2015134087A JP 6582630 B2 JP6582630 B2 JP 6582630B2
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Japan
Prior art keywords
substrate
pressing
bonded
end portion
scribe line
Prior art date
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Active
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JP2015134087A
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English (en)
Japanese (ja)
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JP2017013418A (ja
Inventor
西尾　仁孝
仁孝 西尾
生芳 高松
生芳 高松
勉 上野
勉 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
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Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Priority to JP2015134087A priority Critical patent/JP6582630B2/ja
Priority to TW105111475A priority patent/TWI698319B/zh
Priority to KR1020160054417A priority patent/KR20170004841A/ko
Priority to CN201610329130.9A priority patent/CN106316089B/zh
Publication of JP2017013418A publication Critical patent/JP2017013418A/ja
Application granted granted Critical
Publication of JP6582630B2 publication Critical patent/JP6582630B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67733—Overhead conveying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Liquid Crystal (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP2015134087A 2015-07-03 2015-07-03 基板分断装置及び基板分断方法 Active JP6582630B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015134087A JP6582630B2 (ja) 2015-07-03 2015-07-03 基板分断装置及び基板分断方法
TW105111475A TWI698319B (zh) 2015-07-03 2016-04-13 基板分斷裝置及基板分斷方法
KR1020160054417A KR20170004841A (ko) 2015-07-03 2016-05-03 기판절단장치 및 기판절단방법
CN201610329130.9A CN106316089B (zh) 2015-07-03 2016-05-18 基板分割装置及基板分割方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015134087A JP6582630B2 (ja) 2015-07-03 2015-07-03 基板分断装置及び基板分断方法

Publications (2)

Publication Number Publication Date
JP2017013418A JP2017013418A (ja) 2017-01-19
JP6582630B2 true JP6582630B2 (ja) 2019-10-02

Family

ID=57726358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015134087A Active JP6582630B2 (ja) 2015-07-03 2015-07-03 基板分断装置及び基板分断方法

Country Status (4)

Country Link
JP (1) JP6582630B2 (ko)
KR (1) KR20170004841A (ko)
CN (1) CN106316089B (ko)
TW (1) TWI698319B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017095294A (ja) * 2015-11-20 2017-06-01 三星ダイヤモンド工業株式会社 基板分断装置
JP2019107779A (ja) * 2017-12-15 2019-07-04 三星ダイヤモンド工業株式会社 ピックアップユニット
JP2019109292A (ja) * 2017-12-15 2019-07-04 三星ダイヤモンド工業株式会社 端材除去装置、及び、端材除去方法
KR102023453B1 (ko) * 2018-03-28 2019-09-20 주식회사 카이테크 기판 분할 장치 및 기판 분할 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06205757A (ja) * 1993-01-07 1994-07-26 Hitachi Ltd 核磁気共鳴検査装置
JPH06305757A (ja) * 1993-04-16 1994-11-01 Citizen Watch Co Ltd 表示パネル用基板ガラス分割装置
JP3088327B2 (ja) * 1997-03-24 2000-09-18 鹿児島日本電気株式会社 ガラス基板分断方法
JP2001163642A (ja) * 1999-12-09 2001-06-19 Toyota Autom Loom Works Ltd 貼り合わせガラスパネルの取り出し装置
JP2007156310A (ja) * 2005-12-08 2007-06-21 Nec Lcd Technologies Ltd 液晶パネルの製造方法
KR100959104B1 (ko) * 2008-07-16 2010-05-25 삼성모바일디스플레이주식회사 평판 디스플레이 패널 절단 장치
JP6205757B2 (ja) 2013-03-07 2017-10-04 オムロン株式会社 制御システム、制御装置、画像処理装置、および、制御方法
JP6163341B2 (ja) 2013-04-02 2017-07-12 三星ダイヤモンド工業株式会社 ブレイク装置
JP2014214054A (ja) * 2013-04-25 2014-11-17 三星ダイヤモンド工業株式会社 貼り合わせ基板の加工装置
JP6105414B2 (ja) * 2013-07-08 2017-03-29 三星ダイヤモンド工業株式会社 貼り合わせ基板の加工装置

Also Published As

Publication number Publication date
TW201714721A (zh) 2017-05-01
CN106316089B (zh) 2021-04-02
CN106316089A (zh) 2017-01-11
KR20170004841A (ko) 2017-01-11
JP2017013418A (ja) 2017-01-19
TWI698319B (zh) 2020-07-11

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