JP6575538B2 - 半導体ウェーハの洗浄方法 - Google Patents

半導体ウェーハの洗浄方法 Download PDF

Info

Publication number
JP6575538B2
JP6575538B2 JP2017009295A JP2017009295A JP6575538B2 JP 6575538 B2 JP6575538 B2 JP 6575538B2 JP 2017009295 A JP2017009295 A JP 2017009295A JP 2017009295 A JP2017009295 A JP 2017009295A JP 6575538 B2 JP6575538 B2 JP 6575538B2
Authority
JP
Japan
Prior art keywords
oxide film
semiconductor wafer
cleaning
rpm
rotation speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017009295A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018120886A (ja
JP2018120886A5 (https=
Inventor
健作 五十嵐
健作 五十嵐
阿部 達夫
達夫 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2017009295A priority Critical patent/JP6575538B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to KR1020197019648A priority patent/KR102509323B1/ko
Priority to SG10201913707UA priority patent/SG10201913707UA/en
Priority to US16/471,609 priority patent/US11094525B2/en
Priority to CN201780082034.1A priority patent/CN110140197B/zh
Priority to PCT/JP2017/045831 priority patent/WO2018135226A1/ja
Priority to EP17892697.8A priority patent/EP3573090B1/en
Priority to TW107100403A priority patent/TWI778004B/zh
Publication of JP2018120886A publication Critical patent/JP2018120886A/ja
Publication of JP2018120886A5 publication Critical patent/JP2018120886A5/ja
Application granted granted Critical
Publication of JP6575538B2 publication Critical patent/JP6575538B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2017009295A 2017-01-23 2017-01-23 半導体ウェーハの洗浄方法 Active JP6575538B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2017009295A JP6575538B2 (ja) 2017-01-23 2017-01-23 半導体ウェーハの洗浄方法
SG10201913707UA SG10201913707UA (en) 2017-01-23 2017-12-20 Method for cleaning semiconductor wafer
US16/471,609 US11094525B2 (en) 2017-01-23 2017-12-20 Method for cleaning semiconductor wafer
CN201780082034.1A CN110140197B (zh) 2017-01-23 2017-12-20 半导体晶圆的洗净方法
KR1020197019648A KR102509323B1 (ko) 2017-01-23 2017-12-20 반도체 웨이퍼의 세정방법
PCT/JP2017/045831 WO2018135226A1 (ja) 2017-01-23 2017-12-20 半導体ウェーハの洗浄方法
EP17892697.8A EP3573090B1 (en) 2017-01-23 2017-12-20 Semiconductor wafer cleaning method
TW107100403A TWI778004B (zh) 2017-01-23 2018-01-05 半導體晶圓的洗淨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017009295A JP6575538B2 (ja) 2017-01-23 2017-01-23 半導体ウェーハの洗浄方法

Publications (3)

Publication Number Publication Date
JP2018120886A JP2018120886A (ja) 2018-08-02
JP2018120886A5 JP2018120886A5 (https=) 2019-07-18
JP6575538B2 true JP6575538B2 (ja) 2019-09-18

Family

ID=62907914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017009295A Active JP6575538B2 (ja) 2017-01-23 2017-01-23 半導体ウェーハの洗浄方法

Country Status (8)

Country Link
US (1) US11094525B2 (https=)
EP (1) EP3573090B1 (https=)
JP (1) JP6575538B2 (https=)
KR (1) KR102509323B1 (https=)
CN (1) CN110140197B (https=)
SG (1) SG10201913707UA (https=)
TW (1) TWI778004B (https=)
WO (1) WO2018135226A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI128613B (en) * 2019-06-19 2020-08-31 Comptek Solutions Oy Optoelectronic device
KR20240121053A (ko) * 2023-02-01 2024-08-08 에스케이실트론 주식회사 반도체 기판 및 반도체 기판의 세정 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069195B2 (ja) * 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
JP2002368067A (ja) * 2001-06-08 2002-12-20 Tokyo Electron Ltd 回転式基板処理装置及び回転式基板処理方法
JP4089809B2 (ja) * 2002-03-13 2008-05-28 Sumco Techxiv株式会社 半導体ウェーハのエッジ部の酸化膜除去装置
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
CN100524639C (zh) * 2005-02-07 2009-08-05 株式会社荏原制作所 基板处理方法、基板处理装置及控制程序
JP2007165366A (ja) * 2005-12-09 2007-06-28 Ebara Corp 基板処理装置および基板処理方法
JP4832201B2 (ja) * 2006-07-24 2011-12-07 大日本スクリーン製造株式会社 基板処理装置
JP2009147038A (ja) * 2007-12-13 2009-07-02 Dainippon Screen Mfg Co Ltd 基板処理方法
JP5317529B2 (ja) 2008-05-02 2013-10-16 Sumco Techxiv株式会社 半導体ウェーハの処理方法及び処理装置
JP2010177543A (ja) * 2009-01-30 2010-08-12 Ebara Corp 基板処理方法及び基板処理装置
JP5795917B2 (ja) * 2010-09-27 2015-10-14 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP5061229B2 (ja) * 2010-10-18 2012-10-31 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP5589968B2 (ja) * 2011-06-17 2014-09-17 信越半導体株式会社 半導体ウェーハの洗浄方法
JP6379400B2 (ja) * 2013-09-26 2018-08-29 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP6256828B2 (ja) * 2013-10-10 2018-01-10 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP2015220284A (ja) * 2014-05-15 2015-12-07 信越半導体株式会社 ウエーハの洗浄方法

Also Published As

Publication number Publication date
US11094525B2 (en) 2021-08-17
WO2018135226A1 (ja) 2018-07-26
EP3573090A1 (en) 2019-11-27
EP3573090B1 (en) 2024-05-01
TWI778004B (zh) 2022-09-21
JP2018120886A (ja) 2018-08-02
CN110140197B (zh) 2023-04-28
KR20190105581A (ko) 2019-09-17
KR102509323B1 (ko) 2023-03-13
CN110140197A (zh) 2019-08-16
SG10201913707UA (en) 2020-03-30
US20200105517A1 (en) 2020-04-02
EP3573090A4 (en) 2020-11-04
TW201841240A (zh) 2018-11-16

Similar Documents

Publication Publication Date Title
JP5589968B2 (ja) 半導体ウェーハの洗浄方法
TWI657309B (zh) 晶圓之洗淨方法
JP6399173B1 (ja) シリコンウェーハの洗浄方法
JP2001053050A (ja) 半導体基板の洗浄方法
WO2013179569A1 (ja) 半導体ウェーハの洗浄方法
JP6575538B2 (ja) 半導体ウェーハの洗浄方法
JP6347232B2 (ja) シリコンウェーハの洗浄方法
CN105428211A (zh) 一种去除焊盘缺陷的方法
TWI460782B (zh) 晶圓表面處理方法
TWI909266B (zh) 半導體晶圓的洗淨方法、半導體晶圓的製造方法及半導體晶圓
JP5208658B2 (ja) 半導体ウェハの洗浄方法、および、半導体ウェハ
JP7439788B2 (ja) ウェーハの洗浄方法
WO2025099975A1 (ja) シリコンウェーハの洗浄方法
JP2009111093A (ja) 半導体基板の製造方法
JP2025094340A (ja) シリコンウェーハの洗浄方法
JP5461810B2 (ja) 半導体ウェハの洗浄方法
JP2024171492A (ja) シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ
JP2008021924A (ja) シリコンウエハ表面の不純物除去方法
JP2005057179A (ja) 半導体装置の洗浄方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190611

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20190617

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20190712

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190723

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190805

R150 Certificate of patent or registration of utility model

Ref document number: 6575538

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250