CN110140197B - 半导体晶圆的洗净方法 - Google Patents

半导体晶圆的洗净方法 Download PDF

Info

Publication number
CN110140197B
CN110140197B CN201780082034.1A CN201780082034A CN110140197B CN 110140197 B CN110140197 B CN 110140197B CN 201780082034 A CN201780082034 A CN 201780082034A CN 110140197 B CN110140197 B CN 110140197B
Authority
CN
China
Prior art keywords
oxide film
semiconductor wafer
cleaning
rotation speed
100rpm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780082034.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN110140197A (zh
Inventor
五十岚健作
阿部达夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN110140197A publication Critical patent/CN110140197A/zh
Application granted granted Critical
Publication of CN110140197B publication Critical patent/CN110140197B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
CN201780082034.1A 2017-01-23 2017-12-20 半导体晶圆的洗净方法 Active CN110140197B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-009295 2017-01-23
JP2017009295A JP6575538B2 (ja) 2017-01-23 2017-01-23 半導体ウェーハの洗浄方法
PCT/JP2017/045831 WO2018135226A1 (ja) 2017-01-23 2017-12-20 半導体ウェーハの洗浄方法

Publications (2)

Publication Number Publication Date
CN110140197A CN110140197A (zh) 2019-08-16
CN110140197B true CN110140197B (zh) 2023-04-28

Family

ID=62907914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780082034.1A Active CN110140197B (zh) 2017-01-23 2017-12-20 半导体晶圆的洗净方法

Country Status (8)

Country Link
US (1) US11094525B2 (https=)
EP (1) EP3573090B1 (https=)
JP (1) JP6575538B2 (https=)
KR (1) KR102509323B1 (https=)
CN (1) CN110140197B (https=)
SG (1) SG10201913707UA (https=)
TW (1) TWI778004B (https=)
WO (1) WO2018135226A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI128613B (en) * 2019-06-19 2020-08-31 Comptek Solutions Oy Optoelectronic device
KR20240121053A (ko) * 2023-02-01 2024-08-08 에스케이실트론 주식회사 반도체 기판 및 반도체 기판의 세정 방법

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078832A (en) * 1989-05-06 1992-01-07 Dainippon Screen Mfg. Co., Ltd. Method of treating wafer surface
JP2002368067A (ja) * 2001-06-08 2002-12-20 Tokyo Electron Ltd 回転式基板処理装置及び回転式基板処理方法
JP2003273063A (ja) * 2002-03-13 2003-09-26 Komatsu Electronic Metals Co Ltd 半導体ウェーハのエッジ部の酸化膜除去装置および方法
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
JP2007165366A (ja) * 2005-12-09 2007-06-28 Ebara Corp 基板処理装置および基板処理方法
CN101116176A (zh) * 2005-02-07 2008-01-30 株式会社荏原制作所 基板处理方法、基板处理装置及控制程序
JP2009147038A (ja) * 2007-12-13 2009-07-02 Dainippon Screen Mfg Co Ltd 基板処理方法
JP2010177543A (ja) * 2009-01-30 2010-08-12 Ebara Corp 基板処理方法及び基板処理装置
JP2011014935A (ja) * 2010-10-18 2011-01-20 Tokyo Electron Ltd 基板洗浄装置及び基板洗浄方法。
CN103608904A (zh) * 2011-06-17 2014-02-26 信越半导体株式会社 半导体晶片的清洗方法
WO2015174004A1 (ja) * 2014-05-15 2015-11-19 信越半導体株式会社 ウエーハの洗浄方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4832201B2 (ja) * 2006-07-24 2011-12-07 大日本スクリーン製造株式会社 基板処理装置
JP5317529B2 (ja) 2008-05-02 2013-10-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの処理方法及び処理装置
JP5795917B2 (ja) * 2010-09-27 2015-10-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6379400B2 (ja) * 2013-09-26 2018-08-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6256828B2 (ja) * 2013-10-10 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078832A (en) * 1989-05-06 1992-01-07 Dainippon Screen Mfg. Co., Ltd. Method of treating wafer surface
JP2002368067A (ja) * 2001-06-08 2002-12-20 Tokyo Electron Ltd 回転式基板処理装置及び回転式基板処理方法
JP2003273063A (ja) * 2002-03-13 2003-09-26 Komatsu Electronic Metals Co Ltd 半導体ウェーハのエッジ部の酸化膜除去装置および方法
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
CN101116176A (zh) * 2005-02-07 2008-01-30 株式会社荏原制作所 基板处理方法、基板处理装置及控制程序
JP2007165366A (ja) * 2005-12-09 2007-06-28 Ebara Corp 基板処理装置および基板処理方法
JP2009147038A (ja) * 2007-12-13 2009-07-02 Dainippon Screen Mfg Co Ltd 基板処理方法
JP2010177543A (ja) * 2009-01-30 2010-08-12 Ebara Corp 基板処理方法及び基板処理装置
JP2011014935A (ja) * 2010-10-18 2011-01-20 Tokyo Electron Ltd 基板洗浄装置及び基板洗浄方法。
CN103608904A (zh) * 2011-06-17 2014-02-26 信越半导体株式会社 半导体晶片的清洗方法
WO2015174004A1 (ja) * 2014-05-15 2015-11-19 信越半導体株式会社 ウエーハの洗浄方法

Also Published As

Publication number Publication date
US11094525B2 (en) 2021-08-17
WO2018135226A1 (ja) 2018-07-26
EP3573090A1 (en) 2019-11-27
EP3573090B1 (en) 2024-05-01
TWI778004B (zh) 2022-09-21
JP2018120886A (ja) 2018-08-02
KR20190105581A (ko) 2019-09-17
KR102509323B1 (ko) 2023-03-13
JP6575538B2 (ja) 2019-09-18
CN110140197A (zh) 2019-08-16
SG10201913707UA (en) 2020-03-30
US20200105517A1 (en) 2020-04-02
EP3573090A4 (en) 2020-11-04
TW201841240A (zh) 2018-11-16

Similar Documents

Publication Publication Date Title
TWI657309B (zh) 晶圓之洗淨方法
CN111033696B (zh) 硅晶圆的清洗方法
TW201409561A (zh) 清洗及乾燥半導體晶圓的方法
WO2015174004A1 (ja) ウエーハの洗浄方法
CN110140197B (zh) 半导体晶圆的洗净方法
CN105428211A (zh) 一种去除焊盘缺陷的方法
JP7806963B2 (ja) 半導体ウェーハの洗浄方法、半導体ウェーハの製造方法、及び半導体ウェーハ
WO2022224583A1 (ja) ウェーハの洗浄方法及び洗浄処理装置
TWI252528B (en) Method for cleaning wafer
JP7578063B2 (ja) 洗浄処理装置
JP7439788B2 (ja) ウェーハの洗浄方法
JP7556426B1 (ja) シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ
WO2025099975A1 (ja) シリコンウェーハの洗浄方法
KR20250136882A (ko) 반도체 웨이퍼를 세정하기 위한 방법
WO2006035865A1 (ja) 半導体ウェーハの製造方法及び半導体ウェーハ
CN113658851A (zh) 一种单片式硅片使用有机酸的清洗方法
KR20040057086A (ko) 반도체 웨이퍼 세정방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant