KR102509323B1 - 반도체 웨이퍼의 세정방법 - Google Patents

반도체 웨이퍼의 세정방법 Download PDF

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Publication number
KR102509323B1
KR102509323B1 KR1020197019648A KR20197019648A KR102509323B1 KR 102509323 B1 KR102509323 B1 KR 102509323B1 KR 1020197019648 A KR1020197019648 A KR 1020197019648A KR 20197019648 A KR20197019648 A KR 20197019648A KR 102509323 B1 KR102509323 B1 KR 102509323B1
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South Korea
Prior art keywords
semiconductor wafer
oxide film
cleaning
rpm
water
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Korean (ko)
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KR20190105581A (ko
Inventor
켄사쿠 이가라시
타츠오 아베
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신에쯔 한도타이 가부시키가이샤
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Publication of KR20190105581A publication Critical patent/KR20190105581A/ko
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    • H01L21/02052—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H01L21/02057—
    • H01L21/6704—
    • H01L21/68764—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

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  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
KR1020197019648A 2017-01-23 2017-12-20 반도체 웨이퍼의 세정방법 Active KR102509323B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2017-009295 2017-01-23
JP2017009295A JP6575538B2 (ja) 2017-01-23 2017-01-23 半導体ウェーハの洗浄方法
PCT/JP2017/045831 WO2018135226A1 (ja) 2017-01-23 2017-12-20 半導体ウェーハの洗浄方法

Publications (2)

Publication Number Publication Date
KR20190105581A KR20190105581A (ko) 2019-09-17
KR102509323B1 true KR102509323B1 (ko) 2023-03-13

Family

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KR1020197019648A Active KR102509323B1 (ko) 2017-01-23 2017-12-20 반도체 웨이퍼의 세정방법

Country Status (8)

Country Link
US (1) US11094525B2 (https=)
EP (1) EP3573090B1 (https=)
JP (1) JP6575538B2 (https=)
KR (1) KR102509323B1 (https=)
CN (1) CN110140197B (https=)
SG (1) SG10201913707UA (https=)
TW (1) TWI778004B (https=)
WO (1) WO2018135226A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI128613B (en) * 2019-06-19 2020-08-31 Comptek Solutions Oy Optoelectronic device
KR20240121053A (ko) * 2023-02-01 2024-08-08 에스케이실트론 주식회사 반도체 기판 및 반도체 기판의 세정 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080016714A1 (en) 2006-07-24 2008-01-24 Koji Kaneyama Substrate processing apparatus
US20150083167A1 (en) 2013-09-26 2015-03-26 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
JP2015076558A (ja) * 2013-10-10 2015-04-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2015220284A (ja) 2014-05-15 2015-12-07 信越半導体株式会社 ウエーハの洗浄方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069195B2 (ja) * 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
JP2002368067A (ja) * 2001-06-08 2002-12-20 Tokyo Electron Ltd 回転式基板処理装置及び回転式基板処理方法
JP4089809B2 (ja) * 2002-03-13 2008-05-28 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハのエッジ部の酸化膜除去装置
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
CN100524639C (zh) * 2005-02-07 2009-08-05 株式会社荏原制作所 基板处理方法、基板处理装置及控制程序
JP2007165366A (ja) * 2005-12-09 2007-06-28 Ebara Corp 基板処理装置および基板処理方法
JP2009147038A (ja) * 2007-12-13 2009-07-02 Dainippon Screen Mfg Co Ltd 基板処理方法
JP5317529B2 (ja) 2008-05-02 2013-10-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの処理方法及び処理装置
JP2010177543A (ja) * 2009-01-30 2010-08-12 Ebara Corp 基板処理方法及び基板処理装置
JP5795917B2 (ja) * 2010-09-27 2015-10-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP5061229B2 (ja) * 2010-10-18 2012-10-31 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP5589968B2 (ja) * 2011-06-17 2014-09-17 信越半導体株式会社 半導体ウェーハの洗浄方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080016714A1 (en) 2006-07-24 2008-01-24 Koji Kaneyama Substrate processing apparatus
US20150083167A1 (en) 2013-09-26 2015-03-26 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
JP2015076558A (ja) * 2013-10-10 2015-04-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2015220284A (ja) 2014-05-15 2015-12-07 信越半導体株式会社 ウエーハの洗浄方法

Also Published As

Publication number Publication date
US11094525B2 (en) 2021-08-17
WO2018135226A1 (ja) 2018-07-26
EP3573090A1 (en) 2019-11-27
EP3573090B1 (en) 2024-05-01
TWI778004B (zh) 2022-09-21
JP2018120886A (ja) 2018-08-02
CN110140197B (zh) 2023-04-28
KR20190105581A (ko) 2019-09-17
JP6575538B2 (ja) 2019-09-18
CN110140197A (zh) 2019-08-16
SG10201913707UA (en) 2020-03-30
US20200105517A1 (en) 2020-04-02
EP3573090A4 (en) 2020-11-04
TW201841240A (zh) 2018-11-16

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