JP6574083B2 - ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品 - Google Patents

ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品 Download PDF

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Publication number
JP6574083B2
JP6574083B2 JP2014112042A JP2014112042A JP6574083B2 JP 6574083 B2 JP6574083 B2 JP 6574083B2 JP 2014112042 A JP2014112042 A JP 2014112042A JP 2014112042 A JP2014112042 A JP 2014112042A JP 6574083 B2 JP6574083 B2 JP 6574083B2
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block
block copolymer
copolymer
pche
poly
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JP2014112042A
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Japanese (ja)
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JP2014237817A (ja
JP2014237817A5 (https=
Inventor
フィリップ・デネ・フスタッド
フランク・スティーブン・ベイツ
マーク・アンドリュー・ヒルマイヤー
ジャスティン・グレン・ケネマー
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Dow Global Technologies LLC
University of Minnesota System
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Dow Global Technologies LLC
University of Minnesota System
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2438/00—Living radical polymerisation
    • C08F2438/01—Atom Transfer Radical Polymerization [ATRP] or reverse ATRP

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Graft Or Block Polymers (AREA)
JP2014112042A 2013-06-07 2014-05-30 ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品 Expired - Fee Related JP6574083B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/912,797 US10202479B2 (en) 2013-06-07 2013-06-07 Poly(cyclohexylethylene)-polyacrylate block copolymers, methods of manufacture thereof and articles comprising the same
US13/912,797 2013-06-07

Publications (3)

Publication Number Publication Date
JP2014237817A JP2014237817A (ja) 2014-12-18
JP2014237817A5 JP2014237817A5 (https=) 2018-08-30
JP6574083B2 true JP6574083B2 (ja) 2019-09-11

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JP2014112042A Expired - Fee Related JP6574083B2 (ja) 2013-06-07 2014-05-30 ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品

Country Status (5)

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US (1) US10202479B2 (https=)
JP (1) JP6574083B2 (https=)
KR (1) KR101631561B1 (https=)
CN (1) CN104231192A (https=)
TW (1) TWI525117B (https=)

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KR20160060223A (ko) * 2014-11-19 2016-05-30 삼성디스플레이 주식회사 미세 패턴 형성 방법
US10780685B2 (en) 2015-03-18 2020-09-22 Riken Technos Corporation Hard coat laminated film
CN107428143B (zh) * 2015-03-18 2019-09-20 理研科技株式会社 硬涂层层叠膜
EP3272513B1 (en) 2015-03-18 2022-06-01 Riken Technos Corporation Molded body
US11352473B2 (en) 2015-03-18 2022-06-07 Riken Technos Corporation Hard coat laminated film and method for producing same
US11433651B2 (en) 2015-03-18 2022-09-06 Riken Technos Corporation Hard coat laminated film
PH12017501474B1 (en) 2015-03-18 2024-05-15 Riken Technos Corp Anti-glare hard coat laminated film
WO2016147716A1 (ja) 2015-03-18 2016-09-22 リケンテクノス株式会社 粘着フィルム
CN107849201B (zh) * 2015-08-21 2021-05-14 株式会社日本触媒 嵌段共聚物
KR102402958B1 (ko) 2015-11-11 2022-05-27 삼성전자주식회사 반도체 장치의 패턴 형성 방법 및 반도체 장치의 제조 방법
JP6599789B2 (ja) * 2015-11-25 2019-10-30 リケンテクノス株式会社 ハードコート積層フィルム
US11774166B2 (en) 2015-11-25 2023-10-03 Riken Technos Corporation Door body
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CN116284517B (zh) * 2022-09-08 2025-06-27 上海八亿时空先进材料有限公司 一种分子量窄分布且高透光性phs树脂及其合成方法与应用

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Also Published As

Publication number Publication date
CN104231192A (zh) 2014-12-24
TW201509970A (zh) 2015-03-16
JP2014237817A (ja) 2014-12-18
KR101631561B1 (ko) 2016-06-20
US20140360975A1 (en) 2014-12-11
TWI525117B (zh) 2016-03-11
US10202479B2 (en) 2019-02-12
KR20140143715A (ko) 2014-12-17

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