JP6573853B2 - 弾性波デバイスおよびその製造方法 - Google Patents

弾性波デバイスおよびその製造方法 Download PDF

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Publication number
JP6573853B2
JP6573853B2 JP2016158253A JP2016158253A JP6573853B2 JP 6573853 B2 JP6573853 B2 JP 6573853B2 JP 2016158253 A JP2016158253 A JP 2016158253A JP 2016158253 A JP2016158253 A JP 2016158253A JP 6573853 B2 JP6573853 B2 JP 6573853B2
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Japan
Prior art keywords
film
upper electrode
lower electrode
dielectric film
piezoelectric
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Expired - Fee Related
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JP2016158253A
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English (en)
Japanese (ja)
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JP2018026735A5 (enExample
JP2018026735A (ja
Inventor
英行 関根
英行 関根
治 川内
治 川内
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Publication date
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Priority to JP2016158253A priority Critical patent/JP6573853B2/ja
Priority to US15/649,483 priority patent/US10491191B2/en
Publication of JP2018026735A publication Critical patent/JP2018026735A/ja
Publication of JP2018026735A5 publication Critical patent/JP2018026735A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2016158253A 2016-08-10 2016-08-10 弾性波デバイスおよびその製造方法 Expired - Fee Related JP6573853B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016158253A JP6573853B2 (ja) 2016-08-10 2016-08-10 弾性波デバイスおよびその製造方法
US15/649,483 US10491191B2 (en) 2016-08-10 2017-07-13 Acoustic wave device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016158253A JP6573853B2 (ja) 2016-08-10 2016-08-10 弾性波デバイスおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2018026735A JP2018026735A (ja) 2018-02-15
JP2018026735A5 JP2018026735A5 (enExample) 2018-04-19
JP6573853B2 true JP6573853B2 (ja) 2019-09-11

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JP2016158253A Expired - Fee Related JP6573853B2 (ja) 2016-08-10 2016-08-10 弾性波デバイスおよびその製造方法

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US (1) US10491191B2 (enExample)
JP (1) JP6573853B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6889423B2 (ja) * 2018-02-05 2021-06-18 株式会社村田製作所 フィルタ装置、高周波フロントエンド回路、および通信装置
JP7302981B2 (ja) * 2019-02-07 2023-07-04 太陽誘電株式会社 フィルタおよびマルチプレクサ
JP7288307B2 (ja) * 2019-02-07 2023-06-07 太陽誘電株式会社 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ
JP7215413B2 (ja) 2019-12-27 2023-01-31 株式会社村田製作所 弾性波フィルタ
JP7485479B2 (ja) * 2020-03-17 2024-05-16 太陽誘電株式会社 フィルタ
KR102463862B1 (ko) 2020-08-20 2022-11-04 (주)와이솔 개선된 온도계수를 갖는 fbar 칩 및 패키지
US11515247B2 (en) * 2021-01-14 2022-11-29 Qualcomm Incorporated Capacitance fine tuning by fin capacitor design
US12047744B2 (en) * 2021-04-26 2024-07-23 Rf360 Singapore Pte. Ltd. Etch stop and protection layer for capacitor processing in electroacoustic devices
US12483226B2 (en) 2021-12-29 2025-11-25 Skyworks Solutions, Inc. Acoustic wave device with tilted multilayer interdigital transducer electrode
US20230223910A1 (en) 2022-01-13 2023-07-13 Skyworks Solutions, Inc. Method of making acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
US20230320227A1 (en) * 2022-03-29 2023-10-05 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure and semiconductor structure thereof
CN119054201A (zh) * 2022-04-20 2024-11-29 株式会社村田制作所 弹性波装置以及其制造方法
CN117134739B (zh) * 2022-05-20 2024-05-28 锐石创芯(重庆)科技有限公司 滤波器、多工器、射频前端模组及滤波器的制备方法
CN115001440B (zh) * 2022-07-19 2022-10-21 深圳新声半导体有限公司 电子器件和电容结构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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JPS63187713A (ja) * 1987-01-29 1988-08-03 Toshiba Corp 集積型圧電薄膜機能素子
JPH07221587A (ja) * 1994-01-31 1995-08-18 Murata Mfg Co Ltd 共振子装置
EP1290790B1 (en) * 2000-04-06 2009-04-01 Nxp B.V. Tunable filter arrangement
TW540173B (en) * 2002-05-03 2003-07-01 Asia Pacific Microsystems Inc Bulk acoustic device having integrated fine-tuning and trimming devices
JP2005093465A (ja) * 2003-09-12 2005-04-07 Murata Mfg Co Ltd 薄膜キャパシタ、圧電フィルタおよびその製造方法、ならびに分波器、通信機
JP2008054046A (ja) * 2006-08-24 2008-03-06 Matsushita Electric Ind Co Ltd 圧電フィルタ及びそれを用いた共用器、通信機器
JP4342370B2 (ja) * 2004-04-19 2009-10-14 株式会社東芝 高周波集積回路装置
JP4697528B2 (ja) * 2004-06-02 2011-06-08 太陽誘電株式会社 弾性波装置
JP4791181B2 (ja) * 2005-12-28 2011-10-12 京セラ株式会社 薄膜バルク音響波共振子、それを備えるフィルタおよび通信装置ならびに薄膜バルク音響波共振子の製造方法
US8756778B2 (en) * 2009-10-01 2014-06-24 Stmicroelectronics Sa Method of adjustment during manufacture of a circuit having a capacitor
JP6336712B2 (ja) 2013-01-28 2018-06-06 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6333540B2 (ja) 2013-11-11 2018-05-30 太陽誘電株式会社 圧電薄膜共振子、フィルタ、及び分波器
JP6603012B2 (ja) * 2014-05-21 2019-11-06 太陽誘電株式会社 分波器

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US20180048290A1 (en) 2018-02-15
JP2018026735A (ja) 2018-02-15
US10491191B2 (en) 2019-11-26

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