JP2018026735A5 - - Google Patents
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- Publication number
- JP2018026735A5 JP2018026735A5 JP2016158253A JP2016158253A JP2018026735A5 JP 2018026735 A5 JP2018026735 A5 JP 2018026735A5 JP 2016158253 A JP2016158253 A JP 2016158253A JP 2016158253 A JP2016158253 A JP 2016158253A JP 2018026735 A5 JP2018026735 A5 JP 2018026735A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- resonance region
- dielectric film
- piezoelectric
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000037431 insertion Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016158253A JP6573853B2 (ja) | 2016-08-10 | 2016-08-10 | 弾性波デバイスおよびその製造方法 |
| US15/649,483 US10491191B2 (en) | 2016-08-10 | 2017-07-13 | Acoustic wave device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016158253A JP6573853B2 (ja) | 2016-08-10 | 2016-08-10 | 弾性波デバイスおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018026735A JP2018026735A (ja) | 2018-02-15 |
| JP2018026735A5 true JP2018026735A5 (enExample) | 2018-04-19 |
| JP6573853B2 JP6573853B2 (ja) | 2019-09-11 |
Family
ID=61160402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016158253A Expired - Fee Related JP6573853B2 (ja) | 2016-08-10 | 2016-08-10 | 弾性波デバイスおよびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10491191B2 (enExample) |
| JP (1) | JP6573853B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6889423B2 (ja) * | 2018-02-05 | 2021-06-18 | 株式会社村田製作所 | フィルタ装置、高周波フロントエンド回路、および通信装置 |
| JP7302981B2 (ja) * | 2019-02-07 | 2023-07-04 | 太陽誘電株式会社 | フィルタおよびマルチプレクサ |
| JP7288307B2 (ja) * | 2019-02-07 | 2023-06-07 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ |
| JP7215413B2 (ja) | 2019-12-27 | 2023-01-31 | 株式会社村田製作所 | 弾性波フィルタ |
| JP7485479B2 (ja) * | 2020-03-17 | 2024-05-16 | 太陽誘電株式会社 | フィルタ |
| KR102463862B1 (ko) | 2020-08-20 | 2022-11-04 | (주)와이솔 | 개선된 온도계수를 갖는 fbar 칩 및 패키지 |
| US11515247B2 (en) * | 2021-01-14 | 2022-11-29 | Qualcomm Incorporated | Capacitance fine tuning by fin capacitor design |
| US12047744B2 (en) * | 2021-04-26 | 2024-07-23 | Rf360 Singapore Pte. Ltd. | Etch stop and protection layer for capacitor processing in electroacoustic devices |
| US12483226B2 (en) | 2021-12-29 | 2025-11-25 | Skyworks Solutions, Inc. | Acoustic wave device with tilted multilayer interdigital transducer electrode |
| US20230223910A1 (en) | 2022-01-13 | 2023-07-13 | Skyworks Solutions, Inc. | Method of making acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression |
| US20230320227A1 (en) * | 2022-03-29 | 2023-10-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for manufacturing semiconductor structure and semiconductor structure thereof |
| CN119054201A (zh) * | 2022-04-20 | 2024-11-29 | 株式会社村田制作所 | 弹性波装置以及其制造方法 |
| CN117134739B (zh) * | 2022-05-20 | 2024-05-28 | 锐石创芯(重庆)科技有限公司 | 滤波器、多工器、射频前端模组及滤波器的制备方法 |
| CN115001440B (zh) * | 2022-07-19 | 2022-10-21 | 深圳新声半导体有限公司 | 电子器件和电容结构 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63187713A (ja) * | 1987-01-29 | 1988-08-03 | Toshiba Corp | 集積型圧電薄膜機能素子 |
| JPH07221587A (ja) * | 1994-01-31 | 1995-08-18 | Murata Mfg Co Ltd | 共振子装置 |
| EP1290790B1 (en) * | 2000-04-06 | 2009-04-01 | Nxp B.V. | Tunable filter arrangement |
| TW540173B (en) * | 2002-05-03 | 2003-07-01 | Asia Pacific Microsystems Inc | Bulk acoustic device having integrated fine-tuning and trimming devices |
| JP2005093465A (ja) * | 2003-09-12 | 2005-04-07 | Murata Mfg Co Ltd | 薄膜キャパシタ、圧電フィルタおよびその製造方法、ならびに分波器、通信機 |
| JP2008054046A (ja) * | 2006-08-24 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 圧電フィルタ及びそれを用いた共用器、通信機器 |
| JP4342370B2 (ja) * | 2004-04-19 | 2009-10-14 | 株式会社東芝 | 高周波集積回路装置 |
| JP4697528B2 (ja) * | 2004-06-02 | 2011-06-08 | 太陽誘電株式会社 | 弾性波装置 |
| JP4791181B2 (ja) * | 2005-12-28 | 2011-10-12 | 京セラ株式会社 | 薄膜バルク音響波共振子、それを備えるフィルタおよび通信装置ならびに薄膜バルク音響波共振子の製造方法 |
| US8756778B2 (en) * | 2009-10-01 | 2014-06-24 | Stmicroelectronics Sa | Method of adjustment during manufacture of a circuit having a capacitor |
| JP6336712B2 (ja) | 2013-01-28 | 2018-06-06 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
| JP6333540B2 (ja) | 2013-11-11 | 2018-05-30 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、及び分波器 |
| JP6603012B2 (ja) * | 2014-05-21 | 2019-11-06 | 太陽誘電株式会社 | 分波器 |
-
2016
- 2016-08-10 JP JP2016158253A patent/JP6573853B2/ja not_active Expired - Fee Related
-
2017
- 2017-07-13 US US15/649,483 patent/US10491191B2/en not_active Expired - Fee Related
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