JP6537892B2 - 半導体装置、及び電子機器 - Google Patents
半導体装置、及び電子機器 Download PDFInfo
- Publication number
- JP6537892B2 JP6537892B2 JP2015105151A JP2015105151A JP6537892B2 JP 6537892 B2 JP6537892 B2 JP 6537892B2 JP 2015105151 A JP2015105151 A JP 2015105151A JP 2015105151 A JP2015105151 A JP 2015105151A JP 6537892 B2 JP6537892 B2 JP 6537892B2
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- Prior art keywords
- transistor
- circuit
- wiring
- semiconductor
- film
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Geometry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015105151A JP6537892B2 (ja) | 2014-05-30 | 2015-05-25 | 半導体装置、及び電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014113036 | 2014-05-30 | ||
| JP2014113036 | 2014-05-30 | ||
| JP2015105151A JP6537892B2 (ja) | 2014-05-30 | 2015-05-25 | 半導体装置、及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016006862A JP2016006862A (ja) | 2016-01-14 |
| JP2016006862A5 JP2016006862A5 (OSRAM) | 2018-07-05 |
| JP6537892B2 true JP6537892B2 (ja) | 2019-07-03 |
Family
ID=54702692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015105151A Active JP6537892B2 (ja) | 2014-05-30 | 2015-05-25 | 半導体装置、及び電子機器 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9865588B2 (OSRAM) |
| JP (1) | JP6537892B2 (OSRAM) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015182000A1 (en) | 2014-05-30 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| WO2017064587A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, data processor, and method for manufacturing display panel |
| JP2017103408A (ja) * | 2015-12-04 | 2017-06-08 | 株式会社ジャパンディスプレイ | 表示装置 |
| US9954003B2 (en) * | 2016-02-17 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2017187301A1 (en) * | 2016-04-28 | 2017-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| JP2018013765A (ja) | 2016-04-28 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 電子デバイス |
| US10615187B2 (en) * | 2016-07-27 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| US10147722B2 (en) * | 2016-08-12 | 2018-12-04 | Renesas Electronics America Inc. | Isolated circuit formed during back end of line process |
| US10685983B2 (en) | 2016-11-11 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| JPWO2018167588A1 (ja) * | 2017-03-13 | 2020-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| DE102017105713B4 (de) | 2017-03-16 | 2018-11-22 | Infineon Technologies Ag | Transistorbauelement |
| KR20190142344A (ko) | 2017-04-28 | 2019-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP6970357B2 (ja) * | 2017-08-31 | 2021-11-24 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP2019129230A (ja) | 2018-01-24 | 2019-08-01 | 東芝メモリ株式会社 | 半導体装置 |
| US12317600B2 (en) | 2018-01-25 | 2025-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and semiconductor device |
| US10826492B2 (en) * | 2018-08-31 | 2020-11-03 | Xilinx, Inc. | Power gating in stacked die structures |
| US10833089B2 (en) | 2018-11-16 | 2020-11-10 | International Business Machines Corporation | Buried conductive layer supplying digital circuits |
| US11164879B2 (en) | 2018-11-16 | 2021-11-02 | International Business Machines Corporation | Microelectronic device with a memory element utilizing stacked vertical devices |
| US10804266B2 (en) * | 2018-11-16 | 2020-10-13 | International Business Machines Corporation | Microelectronic device utilizing stacked vertical devices |
| US11171142B2 (en) | 2018-11-16 | 2021-11-09 | International Business Machines Corporation | Integrated circuit with vertical structures on nodes of a grid |
| US11289475B2 (en) | 2019-01-25 | 2022-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| US10950545B2 (en) | 2019-03-08 | 2021-03-16 | International Business Machines Corporation | Circuit wiring techniques for stacked transistor structures |
| CN112530937B (zh) * | 2020-12-02 | 2022-09-27 | Tcl华星光电技术有限公司 | 一种静电保护电路和显示面板 |
| DE102021200924B4 (de) * | 2021-02-02 | 2025-05-28 | SWJ Germany GmbH | Schaltungsanordnung mit zumindest einem Superkondensator und wenigstens einer Bypass-Schaltung, elektrischer Energiespeicher mit einer Schaltungsanordnung und Verwendung einer Schaltungsanordnung als Energiespeicher |
| WO2023155087A1 (en) * | 2022-02-17 | 2023-08-24 | Jade Bird Display (shanghai) Limited | Electrostatic discharge protection system of micro device |
| CN118715615B (zh) * | 2022-02-17 | 2025-12-02 | 上海显耀显示科技有限公司 | 微型器件的静电放电保护系统 |
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| US20150348961A1 (en) | 2015-12-03 |
| JP2016006862A (ja) | 2016-01-14 |
| US9865588B2 (en) | 2018-01-09 |
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