JP6531731B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6531731B2
JP6531731B2 JP2016143298A JP2016143298A JP6531731B2 JP 6531731 B2 JP6531731 B2 JP 6531731B2 JP 2016143298 A JP2016143298 A JP 2016143298A JP 2016143298 A JP2016143298 A JP 2016143298A JP 6531731 B2 JP6531731 B2 JP 6531731B2
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Japan
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cell
layer
outer peripheral
semiconductor
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Japanese (ja)
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JP2018014417A (ja
JP2018014417A5 (enExample
Inventor
河野　憲司
憲司 河野
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Denso Corp
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Denso Corp
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Priority to JP2016143298A priority Critical patent/JP6531731B2/ja
Priority to PCT/JP2017/023902 priority patent/WO2018016283A1/ja
Publication of JP2018014417A publication Critical patent/JP2018014417A/ja
Publication of JP2018014417A5 publication Critical patent/JP2018014417A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016143298A 2016-07-21 2016-07-21 半導体装置 Active JP6531731B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016143298A JP6531731B2 (ja) 2016-07-21 2016-07-21 半導体装置
PCT/JP2017/023902 WO2018016283A1 (ja) 2016-07-21 2017-06-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016143298A JP6531731B2 (ja) 2016-07-21 2016-07-21 半導体装置

Publications (3)

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JP2018014417A JP2018014417A (ja) 2018-01-25
JP2018014417A5 JP2018014417A5 (enExample) 2018-09-20
JP6531731B2 true JP6531731B2 (ja) 2019-06-19

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ID=60992126

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JP2016143298A Active JP6531731B2 (ja) 2016-07-21 2016-07-21 半導体装置

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JP (1) JP6531731B2 (enExample)
WO (1) WO2018016283A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108511512A (zh) * 2018-02-05 2018-09-07 东南大学 一种带有波浪型场限环结构的功率半导体器件及其制备方法
JP6904279B2 (ja) * 2018-02-27 2021-07-14 三菱電機株式会社 半導体装置およびその製造方法並びに電力変換装置
JP7338242B2 (ja) * 2019-05-30 2023-09-05 株式会社デンソー 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689047B2 (ja) * 1991-07-24 1997-12-10 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタとその製造方法
JP4167313B2 (ja) * 1997-03-18 2008-10-15 株式会社東芝 高耐圧電力用半導体装置
JP2002170963A (ja) * 2000-12-01 2002-06-14 Sanken Electric Co Ltd 半導体素子、半導体装置、及び半導体素子の製造方法
JP2003303966A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP5366297B2 (ja) * 2009-02-10 2013-12-11 富士電機株式会社 半導体装置
US8709893B2 (en) * 2011-08-23 2014-04-29 Alpha & Omega Semiconductor, Inc. Method of making a low-Rdson vertical power MOSFET device
JP6150542B2 (ja) * 2013-02-04 2017-06-21 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
JP5967065B2 (ja) * 2013-12-17 2016-08-10 トヨタ自動車株式会社 半導体装置
WO2015159436A1 (ja) * 2014-04-18 2015-10-22 富士電機株式会社 半導体装置の製造方法
JP6534813B2 (ja) * 2015-01-08 2019-06-26 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

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JP2018014417A (ja) 2018-01-25
WO2018016283A1 (ja) 2018-01-25

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