JP6529257B2 - 真空蒸着装置 - Google Patents
真空蒸着装置 Download PDFInfo
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- JP6529257B2 JP6529257B2 JP2014265981A JP2014265981A JP6529257B2 JP 6529257 B2 JP6529257 B2 JP 6529257B2 JP 2014265981 A JP2014265981 A JP 2014265981A JP 2014265981 A JP2014265981 A JP 2014265981A JP 6529257 B2 JP6529257 B2 JP 6529257B2
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- evaporation
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- Prior art date
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- 238000007738 vacuum evaporation Methods 0.000 title claims description 21
- 238000001704 evaporation Methods 0.000 claims description 399
- 230000008020 evaporation Effects 0.000 claims description 399
- 239000000758 substrate Substances 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 49
- 238000007740 vapor deposition Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 16
- 238000001771 vacuum deposition Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 2
- 229960001716 benzalkonium Drugs 0.000 description 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014265981A JP6529257B2 (ja) | 2014-12-26 | 2014-12-26 | 真空蒸着装置 |
TW104131265A TWI673379B (zh) | 2014-12-26 | 2015-09-22 | 真空蒸鍍裝置 |
CN201510857298.2A CN105734495B (zh) | 2014-12-26 | 2015-11-30 | 真空蒸镀装置 |
KR1020150174861A KR101989653B1 (ko) | 2014-12-26 | 2015-12-09 | 진공 증착 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014265981A JP6529257B2 (ja) | 2014-12-26 | 2014-12-26 | 真空蒸着装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016125091A JP2016125091A (ja) | 2016-07-11 |
JP2016125091A5 JP2016125091A5 (nl) | 2017-12-21 |
JP6529257B2 true JP6529257B2 (ja) | 2019-06-12 |
Family
ID=56295966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014265981A Active JP6529257B2 (ja) | 2014-12-26 | 2014-12-26 | 真空蒸着装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6529257B2 (nl) |
KR (1) | KR101989653B1 (nl) |
CN (1) | CN105734495B (nl) |
TW (1) | TWI673379B (nl) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109328244B (zh) * | 2016-08-02 | 2021-06-22 | 株式会社爱发科 | 真空蒸镀装置 |
TWI580807B (zh) * | 2016-10-28 | 2017-05-01 | 財團法人工業技術研究院 | 蒸鍍設備與利用此設備之蒸鍍方法 |
CN111148860B (zh) * | 2017-09-28 | 2022-02-11 | 夏普株式会社 | 蒸镀粒子射出装置及蒸镀装置、以及蒸镀膜制造方法 |
JPWO2019064426A1 (ja) * | 2017-09-28 | 2020-07-27 | シャープ株式会社 | 蒸着源および蒸着装置並びに蒸着膜製造方法 |
CN108570645B (zh) * | 2017-11-30 | 2023-09-29 | 上海微电子装备(集团)股份有限公司 | 真空蒸镀装置及其蒸发头、真空蒸镀方法 |
JP6931599B2 (ja) * | 2017-12-06 | 2021-09-08 | 長州産業株式会社 | 蒸着装置及び蒸着方法 |
JP6941547B2 (ja) | 2017-12-06 | 2021-09-29 | 長州産業株式会社 | 蒸着装置、蒸着方法及び制御板 |
JP6983096B2 (ja) * | 2018-03-30 | 2021-12-17 | 株式会社アルバック | 真空蒸着装置用の蒸着源 |
CN111206220A (zh) * | 2018-11-02 | 2020-05-29 | 北京铂阳顶荣光伏科技有限公司 | 一种镀膜设备及镀膜方法 |
CN111206224A (zh) * | 2018-11-02 | 2020-05-29 | 北京铂阳顶荣光伏科技有限公司 | 沉积腔室、镀膜设备及镀膜方法 |
CN111206221A (zh) * | 2018-11-02 | 2020-05-29 | 北京铂阳顶荣光伏科技有限公司 | 一种镀膜设备及镀膜方法 |
CN111206203A (zh) * | 2018-11-02 | 2020-05-29 | 北京铂阳顶荣光伏科技有限公司 | 沉积腔室、镀膜设备及镀膜方法 |
CN111206207A (zh) * | 2018-11-02 | 2020-05-29 | 北京铂阳顶荣光伏科技有限公司 | 沉积腔室、镀膜设备及镀膜方法 |
CN111206205A (zh) * | 2018-11-02 | 2020-05-29 | 北京铂阳顶荣光伏科技有限公司 | 沉积腔室、镀膜设备及镀膜方法 |
CN111206219A (zh) * | 2018-11-02 | 2020-05-29 | 北京铂阳顶荣光伏科技有限公司 | 沉积腔室、镀膜设备及镀膜方法 |
CN109666898A (zh) * | 2019-01-03 | 2019-04-23 | 福建华佳彩有限公司 | 一种用于点蒸发源的坩埚 |
JP7217635B2 (ja) * | 2019-01-11 | 2023-02-03 | 株式会社アルバック | 蒸着源、成膜装置、及び蒸着方法 |
WO2020213228A1 (ja) * | 2019-04-19 | 2020-10-22 | 株式会社アルバック | 蒸着源及び蒸着装置 |
CN110791731B (zh) * | 2019-11-20 | 2022-05-06 | 信利(仁寿)高端显示科技有限公司 | 一种蒸发源组件 |
CN114657505A (zh) * | 2020-12-24 | 2022-06-24 | 上海升翕光电科技有限公司 | 蒸发源 |
CN114657504A (zh) * | 2020-12-24 | 2022-06-24 | 上海升翕光电科技有限公司 | 蒸发源 |
CN114318237A (zh) * | 2021-12-29 | 2022-04-12 | 武汉华星光电半导体显示技术有限公司 | 一种蒸镀装置 |
WO2024153969A1 (en) * | 2023-01-17 | 2024-07-25 | Applied Materials, Inc. | Material deposition assembly, vacuum deposition system and method of manufacturing a device |
CN116180018A (zh) * | 2023-02-14 | 2023-05-30 | 上海升翕光电科技有限公司 | 一种共蒸方法及共蒸设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100623730B1 (ko) * | 2005-03-07 | 2006-09-14 | 삼성에스디아이 주식회사 | 증발원 어셈블리 및 이를 구비한 증착 장치 |
JP4831841B2 (ja) * | 2009-07-10 | 2011-12-07 | 三菱重工業株式会社 | 真空蒸着装置及び方法 |
KR20120061394A (ko) * | 2010-12-03 | 2012-06-13 | 삼성모바일디스플레이주식회사 | 증발원 및 유기물 증착 방법 |
KR102046440B1 (ko) * | 2012-10-09 | 2019-11-20 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조방법 |
CN104099571A (zh) * | 2013-04-01 | 2014-10-15 | 上海和辉光电有限公司 | 蒸发源组件和薄膜沉积装置和薄膜沉积方法 |
CN104099570B (zh) * | 2013-04-01 | 2016-10-05 | 上海和辉光电有限公司 | 单点线性蒸发源系统 |
-
2014
- 2014-12-26 JP JP2014265981A patent/JP6529257B2/ja active Active
-
2015
- 2015-09-22 TW TW104131265A patent/TWI673379B/zh active
- 2015-11-30 CN CN201510857298.2A patent/CN105734495B/zh active Active
- 2015-12-09 KR KR1020150174861A patent/KR101989653B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN105734495B (zh) | 2019-12-06 |
KR20160079653A (ko) | 2016-07-06 |
JP2016125091A (ja) | 2016-07-11 |
TW201627515A (zh) | 2016-08-01 |
KR101989653B1 (ko) | 2019-06-14 |
CN105734495A (zh) | 2016-07-06 |
TWI673379B (zh) | 2019-10-01 |
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