JP6508895B2 - マルチポート弁アセンブリを備えるプラズマ処理装置 - Google Patents

マルチポート弁アセンブリを備えるプラズマ処理装置 Download PDF

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Publication number
JP6508895B2
JP6508895B2 JP2014159292A JP2014159292A JP6508895B2 JP 6508895 B2 JP6508895 B2 JP 6508895B2 JP 2014159292 A JP2014159292 A JP 2014159292A JP 2014159292 A JP2014159292 A JP 2014159292A JP 6508895 B2 JP6508895 B2 JP 6508895B2
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plasma processing
sealing
plate
movable
transverse
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JP2014159292A
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Japanese (ja)
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JP2015043420A5 (OSRAM
JP2015043420A (ja
Inventor
マイケル・シー．・ケロッグ
ダニエル・エー．・ブラウン
レオナード・ジェイ．・シャープレス
アラン・ケー．・ロン
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Multiple-Way Valves (AREA)
  • Details Of Valves (AREA)
  • Sliding Valves (AREA)
JP2014159292A 2013-08-13 2014-08-05 マルチポート弁アセンブリを備えるプラズマ処理装置 Active JP6508895B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/965,796 US20150047785A1 (en) 2013-08-13 2013-08-13 Plasma Processing Devices Having Multi-Port Valve Assemblies
US13/965,796 2013-08-13

Publications (3)

Publication Number Publication Date
JP2015043420A JP2015043420A (ja) 2015-03-05
JP2015043420A5 JP2015043420A5 (OSRAM) 2015-04-23
JP6508895B2 true JP6508895B2 (ja) 2019-05-08

Family

ID=52465964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014159292A Active JP6508895B2 (ja) 2013-08-13 2014-08-05 マルチポート弁アセンブリを備えるプラズマ処理装置

Country Status (4)

Country Link
US (1) US20150047785A1 (OSRAM)
JP (1) JP6508895B2 (OSRAM)
KR (1) KR20150020120A (OSRAM)
TW (1) TWI659444B (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10049862B2 (en) * 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
KR20250046335A (ko) * 2019-03-15 2025-04-02 램 리써치 코포레이션 에칭 반응기용 터보 분자 펌프 및 캐소드 어셈블리
US11199267B2 (en) * 2019-08-16 2021-12-14 Applied Materials, Inc. Symmetric flow valve for higher flow conductance
JP2021039880A (ja) 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
US20230162950A1 (en) * 2021-11-22 2023-05-25 Applied Materials, Inc. Plasma chamber with a multiphase rotating gas cross-flow and peripheral conductance control rings

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198261A (en) * 1981-05-29 1982-12-04 Fuji Xerox Co Ltd Vapor depositing device
US4516606A (en) * 1983-02-16 1985-05-14 Exxon Research And Engineering Co. Variable orifice valve assembly
JPH0751756B2 (ja) * 1985-11-09 1995-06-05 日電アネルバ株式会社 集塵装置付薄膜処理装置
US5000225A (en) * 1989-11-17 1991-03-19 Applied Materials, Inc. Low profile, combination throttle/gate valve for a multi-pump chamber
JPH043927A (ja) * 1990-04-20 1992-01-08 Mitsubishi Electric Corp 半導体処理装置
JPH07106307A (ja) * 1993-10-07 1995-04-21 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
JP2978974B2 (ja) * 1996-02-01 1999-11-15 キヤノン販売株式会社 プラズマ処理装置
JPH10321604A (ja) * 1997-05-22 1998-12-04 Nec Kyushu Ltd プラズマ処理装置
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
US5997589A (en) * 1998-07-09 1999-12-07 Winbond Electronics Corp. Adjustment pumping plate design for the chamber of semiconductor equipment
JP3579278B2 (ja) * 1999-01-26 2004-10-20 東京エレクトロン株式会社 縦型熱処理装置及びシール装置
JP4330703B2 (ja) * 1999-06-18 2009-09-16 東京エレクトロン株式会社 搬送モジュール及びクラスターシステム
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
IT1314504B1 (it) * 2000-03-02 2002-12-18 Cozzani Mario S R L Valvola per il controllo di flussi di grande sezione, in particolareper compressori o simili.
US6531069B1 (en) * 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
AU2003253689A1 (en) * 2002-07-31 2004-02-16 Tokyo Electron Limited Reduced volume, high conductance process chamber
TWI261313B (en) * 2005-07-29 2006-09-01 Ind Tech Res Inst A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
JP4847136B2 (ja) * 2006-01-17 2011-12-28 株式会社アルバック 真空処理装置
WO2008038940A1 (en) * 2006-09-27 2008-04-03 Ats Engineering Co., Ltd. Gate valve
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
WO2009148913A2 (en) * 2008-06-02 2009-12-10 Mattson Technology, Inc. Process and system for varying the exposure to a chemical ambient in a process chamber
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
US20100075488A1 (en) * 2008-09-19 2010-03-25 Applied Materials, Inc. Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism
JP2010186891A (ja) * 2009-02-12 2010-08-26 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理装置のメンテナンス方法及びプラズマ処理装置の組み立て方法
TWI574341B (zh) * 2010-12-29 2017-03-11 歐瑞康先進科技股份有限公司 真空處理設備及製造方法

Also Published As

Publication number Publication date
US20150047785A1 (en) 2015-02-19
KR20150020120A (ko) 2015-02-25
TW201521076A (zh) 2015-06-01
TWI659444B (zh) 2019-05-11
JP2015043420A (ja) 2015-03-05

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