JP6502325B2 - 基板内に構造を生成するためのシステム - Google Patents

基板内に構造を生成するためのシステム Download PDF

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Publication number
JP6502325B2
JP6502325B2 JP2016513362A JP2016513362A JP6502325B2 JP 6502325 B2 JP6502325 B2 JP 6502325B2 JP 2016513362 A JP2016513362 A JP 2016513362A JP 2016513362 A JP2016513362 A JP 2016513362A JP 6502325 B2 JP6502325 B2 JP 6502325B2
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Prior art keywords
mask
object field
intensity
scan
size
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JP2016513362A
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Japanese (ja)
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JP2016524182A (ja
JP2016524182A5 (https=
Inventor
ミヒャエル パトラ
ミヒャエル パトラ
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2016513362A 2013-05-16 2014-05-15 基板内に構造を生成するためのシステム Active JP6502325B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013209093.5A DE102013209093A1 (de) 2013-05-16 2013-05-16 Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem
DE102013209093.5 2013-05-16
PCT/EP2014/059944 WO2014184292A1 (de) 2013-05-16 2014-05-15 System zum herstellen von strukturen in einem substrat

Publications (3)

Publication Number Publication Date
JP2016524182A JP2016524182A (ja) 2016-08-12
JP2016524182A5 JP2016524182A5 (https=) 2018-11-22
JP6502325B2 true JP6502325B2 (ja) 2019-04-17

Family

ID=50729508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016513362A Active JP6502325B2 (ja) 2013-05-16 2014-05-15 基板内に構造を生成するためのシステム

Country Status (4)

Country Link
US (1) US9880474B2 (https=)
JP (1) JP6502325B2 (https=)
DE (1) DE102013209093A1 (https=)
WO (1) WO2014184292A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11934095B2 (en) 2020-12-22 2024-03-19 Samsung Display Co., Ltd. Method of managing critical dimension error of photomask and method of manufacturing photomask using the method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017200637A1 (de) 2017-01-17 2017-11-02 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren
JP7446069B2 (ja) * 2019-09-03 2024-03-08 キヤノン株式会社 露光装置及び物品の製造方法
CN114746806A (zh) * 2019-11-19 2022-07-12 Asml控股股份有限公司 使用非均匀照射强度分布进行优化
EP4063955A1 (en) * 2021-03-25 2022-09-28 ASML Netherlands B.V. Lithographic apparatus and method for illumination uniformity correction
WO2022221540A1 (en) * 2021-04-14 2022-10-20 Advanced Growing Resources Inc. Optical spectroscopy scanner

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0952491A3 (en) * 1998-04-21 2001-05-09 Asm Lithography B.V. Lithography apparatus
JP3762102B2 (ja) * 1998-06-04 2006-04-05 キヤノン株式会社 走査型投影露光装置及びそれを用いたデバイスの製造方法
JP4098502B2 (ja) * 2001-07-30 2008-06-11 株式会社東芝 マスクの製造方法とｌｓｉの製造方法
DE10214247A1 (de) * 2002-03-26 2003-10-23 Infineon Technologies Ag Verfahren zur Korrektur von Maskenstrukturen
US7173688B2 (en) * 2004-12-28 2007-02-06 Asml Holding N.V. Method for calculating an intensity integral for use in lithography systems
JP2007207821A (ja) * 2006-01-31 2007-08-16 Nikon Corp 可変スリット装置、照明装置、露光装置、露光方法及びデバイスの製造方法
JP4797764B2 (ja) * 2006-04-14 2011-10-19 株式会社ニコン 露光装置の較正方法及び露光装置
DE102008001553B4 (de) * 2008-05-05 2015-04-30 Carl Zeiss Smt Gmbh Komponente zur Einstellung einer scanintegrierten Beleuchtungsenergie in einer Objektebene einer Mikrolithographie-Projektionsbelichtungsanlage
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法
JP5556505B2 (ja) * 2010-08-27 2014-07-23 富士通セミコンダクター株式会社 マスクパターン補正方法及びマスクパターン補正装置
NL2007306A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Source polarization optimization.
DE102011005881A1 (de) 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102011006189A1 (de) * 2011-03-28 2012-06-06 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Belichten einer lichtempfindlichen Schicht
JP6168614B2 (ja) 2011-12-28 2017-07-26 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのためのマスク及び走査投影露光方法
DE102012207572A1 (de) * 2012-05-08 2013-05-08 Carl Zeiss Smt Gmbh Beleuchtungsoptik

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11934095B2 (en) 2020-12-22 2024-03-19 Samsung Display Co., Ltd. Method of managing critical dimension error of photomask and method of manufacturing photomask using the method

Also Published As

Publication number Publication date
DE102013209093A1 (de) 2014-11-20
US9880474B2 (en) 2018-01-30
JP2016524182A (ja) 2016-08-12
US20160062244A1 (en) 2016-03-03
WO2014184292A1 (de) 2014-11-20

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