DE102013209093A1 - Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem - Google Patents

Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem Download PDF

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Publication number
DE102013209093A1
DE102013209093A1 DE102013209093.5A DE102013209093A DE102013209093A1 DE 102013209093 A1 DE102013209093 A1 DE 102013209093A1 DE 102013209093 A DE102013209093 A DE 102013209093A DE 102013209093 A1 DE102013209093 A1 DE 102013209093A1
Authority
DE
Germany
Prior art keywords
mask
field points
intensity
field
illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102013209093.5A
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German (de)
English (en)
Inventor
Michael Patra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE102013209093.5A priority Critical patent/DE102013209093A1/de
Priority to PCT/EP2014/059944 priority patent/WO2014184292A1/de
Priority to JP2016513362A priority patent/JP6502325B2/ja
Publication of DE102013209093A1 publication Critical patent/DE102013209093A1/de
Priority to US14/939,536 priority patent/US9880474B2/en
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE102013209093.5A 2013-05-16 2013-05-16 Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem Ceased DE102013209093A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102013209093.5A DE102013209093A1 (de) 2013-05-16 2013-05-16 Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem
PCT/EP2014/059944 WO2014184292A1 (de) 2013-05-16 2014-05-15 System zum herstellen von strukturen in einem substrat
JP2016513362A JP6502325B2 (ja) 2013-05-16 2014-05-15 基板内に構造を生成するためのシステム
US14/939,536 US9880474B2 (en) 2013-05-16 2015-11-12 System for producing structures in a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013209093.5A DE102013209093A1 (de) 2013-05-16 2013-05-16 Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem

Publications (1)

Publication Number Publication Date
DE102013209093A1 true DE102013209093A1 (de) 2014-11-20

Family

ID=50729508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013209093.5A Ceased DE102013209093A1 (de) 2013-05-16 2013-05-16 Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem

Country Status (4)

Country Link
US (1) US9880474B2 (https=)
JP (1) JP6502325B2 (https=)
DE (1) DE102013209093A1 (https=)
WO (1) WO2014184292A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017200637A1 (de) 2017-01-17 2017-11-02 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7446069B2 (ja) * 2019-09-03 2024-03-08 キヤノン株式会社 露光装置及び物品の製造方法
CN114746806A (zh) * 2019-11-19 2022-07-12 Asml控股股份有限公司 使用非均匀照射强度分布进行优化
KR20220090668A (ko) 2020-12-22 2022-06-30 삼성디스플레이 주식회사 임계선폭 오차 관리방법 및 이를 이용한 포토마스크 제조방법
EP4063955A1 (en) * 2021-03-25 2022-09-28 ASML Netherlands B.V. Lithographic apparatus and method for illumination uniformity correction
WO2022221540A1 (en) * 2021-04-14 2022-10-20 Advanced Growing Resources Inc. Optical spectroscopy scanner

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120075605A1 (en) * 2010-09-23 2012-03-29 Asml Netherlands B.V. Source Polarization Optimization
DE102011005881A1 (de) * 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102011006189A1 (de) * 2011-03-28 2012-06-06 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Belichten einer lichtempfindlichen Schicht

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0952491A3 (en) * 1998-04-21 2001-05-09 Asm Lithography B.V. Lithography apparatus
JP3762102B2 (ja) * 1998-06-04 2006-04-05 キヤノン株式会社 走査型投影露光装置及びそれを用いたデバイスの製造方法
JP4098502B2 (ja) * 2001-07-30 2008-06-11 株式会社東芝 マスクの製造方法とｌｓｉの製造方法
DE10214247A1 (de) * 2002-03-26 2003-10-23 Infineon Technologies Ag Verfahren zur Korrektur von Maskenstrukturen
US7173688B2 (en) * 2004-12-28 2007-02-06 Asml Holding N.V. Method for calculating an intensity integral for use in lithography systems
JP2007207821A (ja) * 2006-01-31 2007-08-16 Nikon Corp 可変スリット装置、照明装置、露光装置、露光方法及びデバイスの製造方法
JP4797764B2 (ja) * 2006-04-14 2011-10-19 株式会社ニコン 露光装置の較正方法及び露光装置
DE102008001553B4 (de) * 2008-05-05 2015-04-30 Carl Zeiss Smt Gmbh Komponente zur Einstellung einer scanintegrierten Beleuchtungsenergie in einer Objektebene einer Mikrolithographie-Projektionsbelichtungsanlage
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法
JP5556505B2 (ja) * 2010-08-27 2014-07-23 富士通セミコンダクター株式会社 マスクパターン補正方法及びマスクパターン補正装置
JP6168614B2 (ja) 2011-12-28 2017-07-26 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのためのマスク及び走査投影露光方法
DE102012207572A1 (de) * 2012-05-08 2013-05-08 Carl Zeiss Smt Gmbh Beleuchtungsoptik

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120075605A1 (en) * 2010-09-23 2012-03-29 Asml Netherlands B.V. Source Polarization Optimization
DE102011005881A1 (de) * 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102011006189A1 (de) * 2011-03-28 2012-06-06 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Belichten einer lichtempfindlichen Schicht

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017200637A1 (de) 2017-01-17 2017-11-02 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren

Also Published As

Publication number Publication date
US9880474B2 (en) 2018-01-30
JP2016524182A (ja) 2016-08-12
US20160062244A1 (en) 2016-03-03
WO2014184292A1 (de) 2014-11-20
JP6502325B2 (ja) 2019-04-17

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