JP6498152B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP6498152B2
JP6498152B2 JP2016110071A JP2016110071A JP6498152B2 JP 6498152 B2 JP6498152 B2 JP 6498152B2 JP 2016110071 A JP2016110071 A JP 2016110071A JP 2016110071 A JP2016110071 A JP 2016110071A JP 6498152 B2 JP6498152 B2 JP 6498152B2
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JP
Japan
Prior art keywords
frequency power
wafer
etching
high frequency
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2016110071A
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English (en)
Japanese (ja)
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JP2017118091A5 (enExample
JP2017118091A (ja
Inventor
諒平 竹田
諒平 竹田
翔 冨永
翔 冨永
欣伸 大矢
欣伸 大矢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW105140600A priority Critical patent/TWI723096B/zh
Priority to US15/375,405 priority patent/US9997374B2/en
Priority to SG10201610489WA priority patent/SG10201610489WA/en
Priority to KR1020160170499A priority patent/KR102100011B1/ko
Priority to CN201611165712.4A priority patent/CN106952798B/zh
Publication of JP2017118091A publication Critical patent/JP2017118091A/ja
Priority to US15/977,043 priority patent/US10381237B2/en
Publication of JP2017118091A5 publication Critical patent/JP2017118091A5/ja
Application granted granted Critical
Publication of JP6498152B2 publication Critical patent/JP6498152B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H10P14/6318—
    • H10P14/6514—
    • H10P50/267—
    • H10P50/283—
    • H10P95/90—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
JP2016110071A 2015-12-18 2016-06-01 エッチング方法 Active JP6498152B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW105140600A TWI723096B (zh) 2015-12-18 2016-12-08 蝕刻方法
US15/375,405 US9997374B2 (en) 2015-12-18 2016-12-12 Etching method
KR1020160170499A KR102100011B1 (ko) 2015-12-18 2016-12-14 에칭 방법
SG10201610489WA SG10201610489WA (en) 2015-12-18 2016-12-14 Etching method
CN201611165712.4A CN106952798B (zh) 2015-12-18 2016-12-16 蚀刻方法
US15/977,043 US10381237B2 (en) 2015-12-18 2018-05-11 Etching method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015247568 2015-12-18
JP2015247568 2015-12-18

Publications (3)

Publication Number Publication Date
JP2017118091A JP2017118091A (ja) 2017-06-29
JP2017118091A5 JP2017118091A5 (enExample) 2019-02-07
JP6498152B2 true JP6498152B2 (ja) 2019-04-10

Family

ID=59234560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016110071A Active JP6498152B2 (ja) 2015-12-18 2016-06-01 エッチング方法

Country Status (5)

Country Link
JP (1) JP6498152B2 (enExample)
KR (1) KR102100011B1 (enExample)
CN (1) CN106952798B (enExample)
SG (1) SG10201610489WA (enExample)
TW (1) TWI723096B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6948181B2 (ja) * 2017-08-01 2021-10-13 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6945388B2 (ja) * 2017-08-23 2021-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
US10340387B2 (en) 2017-09-20 2019-07-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Low temperature poly-silicon thin film transistor, manufacturing method thereof, and array substrate
CN107507869A (zh) * 2017-09-20 2017-12-22 武汉华星光电半导体显示技术有限公司 低温多晶硅薄膜晶体管及其制备方法和阵列基板
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
US11651969B2 (en) 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
TWI893186B (zh) * 2020-08-24 2025-08-11 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07104927B2 (ja) 1985-08-30 1995-11-13 キヤノン株式会社 画像処理装置
JPH0722393A (ja) 1993-06-23 1995-01-24 Toshiba Corp ドライエッチング装置及びドライエッチング方法
JPH0722149A (ja) 1993-06-28 1995-01-24 Yazaki Corp 電線の接続装置及び接続方法
JP2956524B2 (ja) 1995-04-24 1999-10-04 日本電気株式会社 エッチング方法
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5608384B2 (ja) * 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
JP6211947B2 (ja) * 2013-07-31 2017-10-11 東京エレクトロン株式会社 半導体装置の製造方法
JP6277004B2 (ja) * 2014-01-31 2018-02-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP6230930B2 (ja) * 2014-02-17 2017-11-15 東京エレクトロン株式会社 半導体装置の製造方法
JP6498022B2 (ja) * 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法

Also Published As

Publication number Publication date
TW201727738A (zh) 2017-08-01
KR102100011B1 (ko) 2020-04-10
CN106952798A (zh) 2017-07-14
TWI723096B (zh) 2021-04-01
KR20170073504A (ko) 2017-06-28
CN106952798B (zh) 2019-01-18
JP2017118091A (ja) 2017-06-29
SG10201610489WA (en) 2017-07-28

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