TWI723096B - 蝕刻方法 - Google Patents

蝕刻方法 Download PDF

Info

Publication number
TWI723096B
TWI723096B TW105140600A TW105140600A TWI723096B TW I723096 B TWI723096 B TW I723096B TW 105140600 A TW105140600 A TW 105140600A TW 105140600 A TW105140600 A TW 105140600A TW I723096 B TWI723096 B TW I723096B
Authority
TW
Taiwan
Prior art keywords
frequency power
frequency
etching
output
etching method
Prior art date
Application number
TW105140600A
Other languages
English (en)
Chinese (zh)
Other versions
TW201727738A (zh
Inventor
竹田諒平
冨永翔
大矢欣伸
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201727738A publication Critical patent/TW201727738A/zh
Application granted granted Critical
Publication of TWI723096B publication Critical patent/TWI723096B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H10P14/6318—
    • H10P14/6514—
    • H10P50/267—
    • H10P50/283—
    • H10P95/90—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW105140600A 2015-12-18 2016-12-08 蝕刻方法 TWI723096B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015247568 2015-12-18
JP2015-247568 2015-12-18
JP2016110071A JP6498152B2 (ja) 2015-12-18 2016-06-01 エッチング方法
JP2016-110071 2016-06-01

Publications (2)

Publication Number Publication Date
TW201727738A TW201727738A (zh) 2017-08-01
TWI723096B true TWI723096B (zh) 2021-04-01

Family

ID=59234560

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105140600A TWI723096B (zh) 2015-12-18 2016-12-08 蝕刻方法

Country Status (5)

Country Link
JP (1) JP6498152B2 (enExample)
KR (1) KR102100011B1 (enExample)
CN (1) CN106952798B (enExample)
SG (1) SG10201610489WA (enExample)
TW (1) TWI723096B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6948181B2 (ja) * 2017-08-01 2021-10-13 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6945388B2 (ja) * 2017-08-23 2021-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
US10340387B2 (en) 2017-09-20 2019-07-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Low temperature poly-silicon thin film transistor, manufacturing method thereof, and array substrate
CN107507869A (zh) * 2017-09-20 2017-12-22 武汉华星光电半导体显示技术有限公司 低温多晶硅薄膜晶体管及其制备方法和阵列基板
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
US11651969B2 (en) 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
TWI893186B (zh) * 2020-08-24 2025-08-11 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201419412A (zh) * 2008-11-13 2014-05-16 東京威力科創股份有限公司 電漿蝕刻方法及電漿蝕刻裝置
US20150228500A1 (en) * 2013-07-31 2015-08-13 Tokyo Electron Limited Semiconductor device manufacturing method
JP2015153941A (ja) * 2014-02-17 2015-08-24 東京エレクトロン株式会社 半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07104927B2 (ja) 1985-08-30 1995-11-13 キヤノン株式会社 画像処理装置
JPH0722393A (ja) 1993-06-23 1995-01-24 Toshiba Corp ドライエッチング装置及びドライエッチング方法
JPH0722149A (ja) 1993-06-28 1995-01-24 Yazaki Corp 電線の接続装置及び接続方法
JP2956524B2 (ja) 1995-04-24 1999-10-04 日本電気株式会社 エッチング方法
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP5608384B2 (ja) * 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
JP6277004B2 (ja) * 2014-01-31 2018-02-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP6498022B2 (ja) * 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201419412A (zh) * 2008-11-13 2014-05-16 東京威力科創股份有限公司 電漿蝕刻方法及電漿蝕刻裝置
US20150228500A1 (en) * 2013-07-31 2015-08-13 Tokyo Electron Limited Semiconductor device manufacturing method
JP2015153941A (ja) * 2014-02-17 2015-08-24 東京エレクトロン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
TW201727738A (zh) 2017-08-01
CN106952798A (zh) 2017-07-14
JP2017118091A (ja) 2017-06-29
SG10201610489WA (en) 2017-07-28
KR20170073504A (ko) 2017-06-28
KR102100011B1 (ko) 2020-04-10
CN106952798B (zh) 2019-01-18
JP6498152B2 (ja) 2019-04-10

Similar Documents

Publication Publication Date Title
US10381237B2 (en) Etching method
TWI723096B (zh) 蝕刻方法
TWI706460B (zh) 電漿蝕刻方法
TWI743072B (zh) 蝕刻方法及蝕刻裝置
US12051570B2 (en) Plasma processing apparatus
JP6498022B2 (ja) エッチング処理方法
JP6604911B2 (ja) エッチング処理方法
KR102438346B1 (ko) 에칭 처리 방법 및 플라즈마 처리 장치
JP6621882B2 (ja) エッチング装置
JP2015154047A (ja) エッチング方法、及びプラズマ処理装置
JP7195113B2 (ja) 処理方法及び基板処理装置