JP6495291B2 - 集積回路の静電放電保護 - Google Patents

集積回路の静電放電保護 Download PDF

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Publication number
JP6495291B2
JP6495291B2 JP2016542015A JP2016542015A JP6495291B2 JP 6495291 B2 JP6495291 B2 JP 6495291B2 JP 2016542015 A JP2016542015 A JP 2016542015A JP 2016542015 A JP2016542015 A JP 2016542015A JP 6495291 B2 JP6495291 B2 JP 6495291B2
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Japan
Prior art keywords
diode
drain
gate
voltage
input transistor
Prior art date
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Expired - Fee Related
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JP2016542015A
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English (en)
Japanese (ja)
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JP2016534577A (ja
JP2016534577A5 (enExample
Inventor
ユーセフ、アーメド・アブデル・モネン
グデム、プラサド・スリニバサ・シバ
チャン、リ−チュン
アブデル・ガーニー、エハブ・アーメド・ソビー
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Qualcomm Inc
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Qualcomm Inc
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Publication date
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Publication of JP2016534577A5 publication Critical patent/JP2016534577A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/441—Protection of an amplifier being implemented by clamping means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2016542015A 2013-09-12 2014-09-04 集積回路の静電放電保護 Expired - Fee Related JP6495291B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/024,833 2013-09-12
US14/024,833 US9608437B2 (en) 2013-09-12 2013-09-12 Electro-static discharge protection for integrated circuits
PCT/US2014/054104 WO2015038402A1 (en) 2013-09-12 2014-09-04 Electro-static discharge protection for integrated circuits

Publications (3)

Publication Number Publication Date
JP2016534577A JP2016534577A (ja) 2016-11-04
JP2016534577A5 JP2016534577A5 (enExample) 2017-09-21
JP6495291B2 true JP6495291B2 (ja) 2019-04-03

Family

ID=51541383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016542015A Expired - Fee Related JP6495291B2 (ja) 2013-09-12 2014-09-04 集積回路の静電放電保護

Country Status (6)

Country Link
US (1) US9608437B2 (enExample)
EP (1) EP3044810B1 (enExample)
JP (1) JP6495291B2 (enExample)
KR (1) KR20160055201A (enExample)
CN (1) CN105556666B (enExample)
WO (1) WO2015038402A1 (enExample)

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JP6761374B2 (ja) * 2017-05-25 2020-09-23 株式会社東芝 半導体装置
CN110138375B (zh) * 2018-02-02 2021-08-27 华为技术有限公司 一种用于芯片管脚的电路
DE102019121271A1 (de) * 2018-08-30 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. ESD-Schutzschaltung, Halbleitersystem, das diese aufweist, und Verfahren zum Betreiben derselben
US11774561B2 (en) 2019-02-08 2023-10-03 Luminar Technologies, Inc. Amplifier input protection circuits
CN109830478B (zh) * 2019-02-19 2021-05-04 杭州晶华微电子股份有限公司 一种超低漏电流的芯片输入引脚esd保护电路架构
TWI756639B (zh) * 2020-02-26 2022-03-01 瑞昱半導體股份有限公司 支援消費性電子產品控制通訊協定之控制晶片與相關的耐高壓輸出電路
TWI753751B (zh) * 2021-01-19 2022-01-21 旺宏電子股份有限公司 靜電放電保護裝置及其操作方法
WO2022218392A1 (zh) * 2021-04-14 2022-10-20 南方科技大学 静电放电esd保护电路
CN118648236A (zh) * 2022-02-04 2024-09-13 Qorvo美国公司 用于功率放大器的偏置电路
US12034000B2 (en) * 2022-03-23 2024-07-09 Nxp B.V. Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk
US20250286518A1 (en) * 2024-03-11 2025-09-11 Psemi Corporation ESD Protection Circuit
CN121585100B (zh) * 2026-01-29 2026-07-10 成都嘉纳海威科技有限责任公司 一种增益可调且具管芯保护功能的宽带放大器电路

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Also Published As

Publication number Publication date
US9608437B2 (en) 2017-03-28
CN105556666B (zh) 2018-11-06
EP3044810A1 (en) 2016-07-20
WO2015038402A1 (en) 2015-03-19
KR20160055201A (ko) 2016-05-17
JP2016534577A (ja) 2016-11-04
CN105556666A (zh) 2016-05-04
US20150070803A1 (en) 2015-03-12
EP3044810B1 (en) 2020-11-11

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