CN105556666B - 用于集成电路的静电放电保护 - Google Patents

用于集成电路的静电放电保护 Download PDF

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Publication number
CN105556666B
CN105556666B CN201480049879.7A CN201480049879A CN105556666B CN 105556666 B CN105556666 B CN 105556666B CN 201480049879 A CN201480049879 A CN 201480049879A CN 105556666 B CN105556666 B CN 105556666B
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China
Prior art keywords
diode
drain
coupled
gate
voltage
Prior art date
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CN201480049879.7A
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English (en)
Chinese (zh)
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CN105556666A (zh
Inventor
A·A·M·尤塞夫
P·S·S·古德姆
L-C·常
E·A·S·阿布德尔格哈尼
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Qualcomm Inc
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Qualcomm Inc
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Publication of CN105556666A publication Critical patent/CN105556666A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/441—Protection of an amplifier being implemented by clamping means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
CN201480049879.7A 2013-09-12 2014-09-04 用于集成电路的静电放电保护 Active CN105556666B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/024,833 2013-09-12
US14/024,833 US9608437B2 (en) 2013-09-12 2013-09-12 Electro-static discharge protection for integrated circuits
PCT/US2014/054104 WO2015038402A1 (en) 2013-09-12 2014-09-04 Electro-static discharge protection for integrated circuits

Publications (2)

Publication Number Publication Date
CN105556666A CN105556666A (zh) 2016-05-04
CN105556666B true CN105556666B (zh) 2018-11-06

Family

ID=51541383

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480049879.7A Active CN105556666B (zh) 2013-09-12 2014-09-04 用于集成电路的静电放电保护

Country Status (6)

Country Link
US (1) US9608437B2 (enExample)
EP (1) EP3044810B1 (enExample)
JP (1) JP6495291B2 (enExample)
KR (1) KR20160055201A (enExample)
CN (1) CN105556666B (enExample)
WO (1) WO2015038402A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3118992A1 (en) * 2015-07-16 2017-01-18 Nxp B.V. An rf amplifier
US11025205B2 (en) * 2017-02-22 2021-06-01 Mitsubishi Electric Corporation High frequency amplifier
JP6761374B2 (ja) * 2017-05-25 2020-09-23 株式会社東芝 半導体装置
CN110138375B (zh) * 2018-02-02 2021-08-27 华为技术有限公司 一种用于芯片管脚的电路
DE102019121271A1 (de) * 2018-08-30 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. ESD-Schutzschaltung, Halbleitersystem, das diese aufweist, und Verfahren zum Betreiben derselben
US11774561B2 (en) * 2019-02-08 2023-10-03 Luminar Technologies, Inc. Amplifier input protection circuits
CN109830478B (zh) * 2019-02-19 2021-05-04 杭州晶华微电子股份有限公司 一种超低漏电流的芯片输入引脚esd保护电路架构
TWI756639B (zh) * 2020-02-26 2022-03-01 瑞昱半導體股份有限公司 支援消費性電子產品控制通訊協定之控制晶片與相關的耐高壓輸出電路
TWI753751B (zh) * 2021-01-19 2022-01-21 旺宏電子股份有限公司 靜電放電保護裝置及其操作方法
WO2022218392A1 (zh) * 2021-04-14 2022-10-20 南方科技大学 静电放电esd保护电路
CN118648236A (zh) * 2022-02-04 2024-09-13 Qorvo美国公司 用于功率放大器的偏置电路
US12034000B2 (en) * 2022-03-23 2024-07-09 Nxp B.V. Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk
US20250286518A1 (en) * 2024-03-11 2025-09-11 Psemi Corporation ESD Protection Circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003049281A1 (en) * 2001-12-04 2003-06-12 Koninklijke Philips Electronics N.V. Esd protection circuit for use in rf cmos ic design
US20070058308A1 (en) * 2005-09-14 2007-03-15 Interuniversitair Microelektronica Centrum (Imec) Electrostatic discharge protected circuits
CN102204087A (zh) * 2008-10-29 2011-09-28 高通股份有限公司 具有改进的静电放电保护电路的放大器

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683443A (en) * 1986-01-27 1987-07-28 The United States Of America As Represented By The Secretary Of The Air Force Monolithic low noise amplifier with limiting
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
US5521783A (en) * 1993-09-17 1996-05-28 Analog Devices, Inc. Electrostatic discharge protection circuit
US5589799A (en) * 1994-09-29 1996-12-31 Tibbetts Industries, Inc. Low noise amplifier for microphone
JP3805543B2 (ja) * 1998-11-19 2006-08-02 三菱電機株式会社 半導体集積回路
US6249410B1 (en) * 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
JP2001358297A (ja) * 2000-06-14 2001-12-26 Nec Corp 静電保護回路
EP1217662A1 (en) * 2000-12-21 2002-06-26 Universite Catholique De Louvain Ultra-low power basic blocks and their uses
US6617649B2 (en) 2000-12-28 2003-09-09 Industrial Technology Research Institute Low substrate-noise electrostatic discharge protection circuits with bi-directional silicon diodes
US20050045952A1 (en) * 2003-08-27 2005-03-03 International Business Machines Corporation Pfet-based esd protection strategy for improved external latch-up robustness
US7110230B2 (en) * 2004-06-08 2006-09-19 Sarnoff Corporation Method and apparatus for providing current controlled electrostatic discharge protection
US7336459B2 (en) * 2004-07-29 2008-02-26 United Microelectronics Corp. Electrostatic discharge protection device and circuit thereof
US20060268477A1 (en) * 2004-09-16 2006-11-30 Camp Benjamin V Apparatus for ESD protection
US7145204B2 (en) * 2005-04-15 2006-12-05 Texas Instruments Incorporated Guardwall structures for ESD protection
US7382593B2 (en) * 2005-09-14 2008-06-03 Fairchild Semiconductor Method of linearizing ESD capacitance
DE102006019888B4 (de) * 2006-04-28 2012-10-04 Infineon Technologies Ag Verstärker mit ESD-Schutz
US7593204B1 (en) 2006-06-06 2009-09-22 Rf Micro Devices, Inc. On-chip ESD protection circuit for radio frequency (RF) integrated circuits
US7848068B2 (en) * 2006-09-07 2010-12-07 Industrial Technology Research Institute ESD protection circuit using self-biased current trigger technique and pumping source mechanism
US7583034B2 (en) * 2006-09-26 2009-09-01 Semiconductor Components Industries, L.L.C. LED controller and method therefor
US8094846B2 (en) * 2006-12-18 2012-01-10 Epcos Pte Ltd. Deep sub-micron MOS preamplifier with thick-oxide input stage transistor
KR20080076411A (ko) * 2007-02-15 2008-08-20 주식회사 하이닉스반도체 정전기 보호 회로
JP4303761B2 (ja) * 2007-03-07 2009-07-29 Ｎｅｃエレクトロニクス株式会社 半導体回路及びその動作方法
KR100878439B1 (ko) * 2007-08-30 2009-01-13 주식회사 실리콘웍스 출력 드라이버단의 ｅｓｄ 보호 장치
JP2010103274A (ja) * 2008-10-23 2010-05-06 Nec Electronics Corp 半導体パッケージ
US8089873B2 (en) * 2008-10-28 2012-01-03 Kyungpook National University Industry-Academic Cooperation Foundation Method and system of managing QoS-guaranteed multimode fast mobility in wireless networks
US8331068B2 (en) 2009-02-19 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection for FinFETs
TWI463792B (zh) * 2009-10-29 2014-12-01 Novatek Microelectronics Corp 具有過衝抑制功能的放大電路
US8482888B2 (en) * 2010-05-20 2013-07-09 Taiwan Semiconductor Manufacturing Co. Ltd. ESD block with shared noise optimization and CDM ESD protection for RF circuits
US8564917B2 (en) * 2011-06-02 2013-10-22 GlobalFoundries, Inc. Integrated circuit having electrostatic discharge protection
JP5896682B2 (ja) * 2011-10-18 2016-03-30 ルネサスエレクトロニクス株式会社 半導体集積回路装置
FR2982416B1 (fr) * 2011-11-03 2014-01-03 St Microelectronics Sa Dispositif electronique de protection contre les decharges electrostatiques
KR20130072090A (ko) * 2011-12-21 2013-07-01 에스케이하이닉스 주식회사 반도체 집적회로
EP2677540A1 (en) * 2012-06-19 2013-12-25 Nxp B.V. Electronic device and method of manufacturing the same
US9590571B2 (en) * 2012-10-02 2017-03-07 Knowles Electronics, Llc Single stage buffer with filter
US20140268446A1 (en) * 2013-03-15 2014-09-18 Qualcomm Incorporated Radio frequency integrated circuit (rfic) charged-device model (cdm) protection
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003049281A1 (en) * 2001-12-04 2003-06-12 Koninklijke Philips Electronics N.V. Esd protection circuit for use in rf cmos ic design
US20070058308A1 (en) * 2005-09-14 2007-03-15 Interuniversitair Microelektronica Centrum (Imec) Electrostatic discharge protected circuits
CN102204087A (zh) * 2008-10-29 2011-09-28 高通股份有限公司 具有改进的静电放电保护电路的放大器

Also Published As

Publication number Publication date
EP3044810B1 (en) 2020-11-11
US9608437B2 (en) 2017-03-28
CN105556666A (zh) 2016-05-04
JP2016534577A (ja) 2016-11-04
US20150070803A1 (en) 2015-03-12
WO2015038402A1 (en) 2015-03-19
EP3044810A1 (en) 2016-07-20
JP6495291B2 (ja) 2019-04-03
KR20160055201A (ko) 2016-05-17

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