JP2016534577A5 - - Google Patents

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Publication number
JP2016534577A5
JP2016534577A5 JP2016542015A JP2016542015A JP2016534577A5 JP 2016534577 A5 JP2016534577 A5 JP 2016534577A5 JP 2016542015 A JP2016542015 A JP 2016542015A JP 2016542015 A JP2016542015 A JP 2016542015A JP 2016534577 A5 JP2016534577 A5 JP 2016534577A5
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JP
Japan
Prior art keywords
diode
drain
gate
input transistor
coupling
Prior art date
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Application number
JP2016542015A
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English (en)
Japanese (ja)
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JP2016534577A (ja
JP6495291B2 (ja
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Priority claimed from US14/024,833 external-priority patent/US9608437B2/en
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Publication of JP2016534577A publication Critical patent/JP2016534577A/ja
Publication of JP2016534577A5 publication Critical patent/JP2016534577A5/ja
Application granted granted Critical
Publication of JP6495291B2 publication Critical patent/JP6495291B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016542015A 2013-09-12 2014-09-04 集積回路の静電放電保護 Expired - Fee Related JP6495291B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/024,833 2013-09-12
US14/024,833 US9608437B2 (en) 2013-09-12 2013-09-12 Electro-static discharge protection for integrated circuits
PCT/US2014/054104 WO2015038402A1 (en) 2013-09-12 2014-09-04 Electro-static discharge protection for integrated circuits

Publications (3)

Publication Number Publication Date
JP2016534577A JP2016534577A (ja) 2016-11-04
JP2016534577A5 true JP2016534577A5 (enExample) 2017-09-21
JP6495291B2 JP6495291B2 (ja) 2019-04-03

Family

ID=51541383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016542015A Expired - Fee Related JP6495291B2 (ja) 2013-09-12 2014-09-04 集積回路の静電放電保護

Country Status (6)

Country Link
US (1) US9608437B2 (enExample)
EP (1) EP3044810B1 (enExample)
JP (1) JP6495291B2 (enExample)
KR (1) KR20160055201A (enExample)
CN (1) CN105556666B (enExample)
WO (1) WO2015038402A1 (enExample)

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EP3118992A1 (en) * 2015-07-16 2017-01-18 Nxp B.V. An rf amplifier
JP6641522B2 (ja) * 2017-02-22 2020-02-05 三菱電機株式会社 高周波増幅器
JP6761374B2 (ja) * 2017-05-25 2020-09-23 株式会社東芝 半導体装置
CN110138375B (zh) * 2018-02-02 2021-08-27 华为技术有限公司 一种用于芯片管脚的电路
DE102019121271A1 (de) * 2018-08-30 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. ESD-Schutzschaltung, Halbleitersystem, das diese aufweist, und Verfahren zum Betreiben derselben
US11774561B2 (en) 2019-02-08 2023-10-03 Luminar Technologies, Inc. Amplifier input protection circuits
CN109830478B (zh) * 2019-02-19 2021-05-04 杭州晶华微电子股份有限公司 一种超低漏电流的芯片输入引脚esd保护电路架构
TWI756639B (zh) * 2020-02-26 2022-03-01 瑞昱半導體股份有限公司 支援消費性電子產品控制通訊協定之控制晶片與相關的耐高壓輸出電路
TWI753751B (zh) * 2021-01-19 2022-01-21 旺宏電子股份有限公司 靜電放電保護裝置及其操作方法
TWI868444B (zh) * 2021-04-14 2025-01-01 南方科技大學 靜電放電保護電路
CN118648236A (zh) * 2022-02-04 2024-09-13 Qorvo美国公司 用于功率放大器的偏置电路
US12034000B2 (en) * 2022-03-23 2024-07-09 Nxp B.V. Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk
US20250286518A1 (en) * 2024-03-11 2025-09-11 Psemi Corporation ESD Protection Circuit

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US20140268446A1 (en) * 2013-03-15 2014-09-18 Qualcomm Incorporated Radio frequency integrated circuit (rfic) charged-device model (cdm) protection

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