JP2018510560A5 - - Google Patents

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Publication number
JP2018510560A5
JP2018510560A5 JP2017544896A JP2017544896A JP2018510560A5 JP 2018510560 A5 JP2018510560 A5 JP 2018510560A5 JP 2017544896 A JP2017544896 A JP 2017544896A JP 2017544896 A JP2017544896 A JP 2017544896A JP 2018510560 A5 JP2018510560 A5 JP 2018510560A5
Authority
JP
Japan
Prior art keywords
amplifier
voltage difference
pmos transistor
terminal
protection diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017544896A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018510560A (ja
Filing date
Publication date
Priority claimed from US14/632,646 external-priority patent/US9559640B2/en
Application filed filed Critical
Publication of JP2018510560A publication Critical patent/JP2018510560A/ja
Publication of JP2018510560A5 publication Critical patent/JP2018510560A5/ja
Pending legal-status Critical Current

Links

JP2017544896A 2015-02-26 2016-01-27 Ｃｍｏｓ増幅器のための静電放電保護 Pending JP2018510560A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/632,646 US9559640B2 (en) 2015-02-26 2015-02-26 Electrostatic discharge protection for CMOS amplifier
US14/632,646 2015-02-26
PCT/US2016/015235 WO2016137648A1 (en) 2015-02-26 2016-01-27 Electrostatic discharge protection for cmos amplifier

Publications (2)

Publication Number Publication Date
JP2018510560A JP2018510560A (ja) 2018-04-12
JP2018510560A5 true JP2018510560A5 (enExample) 2019-02-14

Family

ID=55359737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017544896A Pending JP2018510560A (ja) 2015-02-26 2016-01-27 Ｃｍｏｓ増幅器のための静電放電保護

Country Status (7)

Country Link
US (1) US9559640B2 (enExample)
EP (1) EP3262753A1 (enExample)
JP (1) JP2018510560A (enExample)
KR (1) KR20170123313A (enExample)
CN (1) CN107258054B (enExample)
BR (1) BR112017018320A2 (enExample)
WO (1) WO2016137648A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3367562A1 (en) * 2017-02-22 2018-08-29 Comet AG High power amplifier circuit with protective feedback circuit
US10797656B2 (en) * 2018-08-06 2020-10-06 Analong Devices Global Unlimited Company Breakdown protection circuit for power amplifier
US10951177B1 (en) * 2019-06-05 2021-03-16 Rockwell Collins, Inc. Radio frequency power limiter with reflected power detection
US12132452B2 (en) 2020-06-05 2024-10-29 Analog Devices, Inc. Apparatus and methods for amplifier input-overvoltage protection with low leakage current
CN115603677A (zh) * 2021-07-09 2023-01-13 华为技术有限公司（Cn） 跨阻放大器及跨阻放大器的控制方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234652U (enExample) * 1975-09-02 1977-03-11
US4250463A (en) * 1978-08-14 1981-02-10 Telex Computer Products, Inc. Overload protection to prevent saturation of video amplifiers
JPH08139528A (ja) * 1994-09-14 1996-05-31 Oki Electric Ind Co Ltd トランジスタ保護回路
US5740000A (en) 1996-09-30 1998-04-14 Hewlett-Packard Co. ESD protection system for an integrated circuit with multiple power supply networks
JP3255147B2 (ja) * 1998-06-19 2002-02-12 株式会社デンソー 絶縁ゲート型トランジスタのサージ保護回路
US6624999B1 (en) * 2001-11-20 2003-09-23 Intel Corporation Electrostatic discharge protection using inductors
US6894567B2 (en) * 2001-12-04 2005-05-17 Koninklijke Philips Electronics N.V. ESD protection circuit for use in RF CMOS IC design
WO2005094522A2 (en) * 2004-03-23 2005-10-13 Sarnoff Corporation Method and apparatus for protecting a gate oxide using source/bulk pumping
ITMI20040871A1 (it) * 2004-04-30 2004-07-30 St Microelectronics Srl Amplificatore a basso rumore
US7649722B2 (en) * 2005-09-14 2010-01-19 Interuniversitair Microelektronica Centrum (Imec) Electrostatic discharge protected circuits
US8476709B2 (en) 2006-08-24 2013-07-02 Infineon Technologies Ag ESD protection device and method
JP2008263068A (ja) * 2007-04-12 2008-10-30 Nec Electronics Corp 静電気保護回路
CN101039027B (zh) * 2007-05-10 2010-05-26 北京中星微电子有限公司 改进的静电放电保护电路
US7978454B1 (en) * 2007-08-01 2011-07-12 National Semiconductor Corporation ESD structure that protects against power-on and power-off ESD event
US8000068B2 (en) 2008-10-27 2011-08-16 Qualcomm Incorporated ESD protection for field effect transistors of analog input circuits
US8213142B2 (en) 2008-10-29 2012-07-03 Qualcomm, Incorporated Amplifier with improved ESD protection circuitry
US7902604B2 (en) 2009-02-09 2011-03-08 Alpha & Omega Semiconductor, Inc. Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
CN101859766A (zh) * 2009-04-13 2010-10-13 苏州芯美微电子科技有限公司 从电源vdd到io管脚之间的一种新型nmos箝位及其应用方法
TWI463792B (zh) 2009-10-29 2014-12-01 Novatek Microelectronics Corp 具有過衝抑制功能的放大電路
US8482888B2 (en) * 2010-05-20 2013-07-09 Taiwan Semiconductor Manufacturing Co. Ltd. ESD block with shared noise optimization and CDM ESD protection for RF circuits
US8605396B2 (en) 2011-01-07 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection devices and methods for forming ESD protection devices
US8816765B2 (en) * 2012-08-14 2014-08-26 Broadcom Corporation Coupled inductor and calibrated complementary low noise amplifiers
JP6243720B2 (ja) 2013-02-06 2017-12-06 エスアイアイ・セミコンダクタ株式会社 Ｅｓｄ保護回路を備えた半導体装置
US9929698B2 (en) 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection

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