JP2016100400A5 - - Google Patents

Download PDF

Info

Publication number
JP2016100400A5
JP2016100400A5 JP2014234525A JP2014234525A JP2016100400A5 JP 2016100400 A5 JP2016100400 A5 JP 2016100400A5 JP 2014234525 A JP2014234525 A JP 2014234525A JP 2014234525 A JP2014234525 A JP 2014234525A JP 2016100400 A5 JP2016100400 A5 JP 2016100400A5
Authority
JP
Japan
Prior art keywords
mos transistor
enhancement type
type mos
voltage
voltage signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014234525A
Other languages
English (en)
Japanese (ja)
Other versions
JP6415265B2 (ja
JP2016100400A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014234525A priority Critical patent/JP6415265B2/ja
Priority claimed from JP2014234525A external-priority patent/JP6415265B2/ja
Priority to US14/939,448 priority patent/US10426431B2/en
Publication of JP2016100400A publication Critical patent/JP2016100400A/ja
Publication of JP2016100400A5 publication Critical patent/JP2016100400A5/ja
Application granted granted Critical
Publication of JP6415265B2 publication Critical patent/JP6415265B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014234525A 2014-11-19 2014-11-19 保護回路 Active JP6415265B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014234525A JP6415265B2 (ja) 2014-11-19 2014-11-19 保護回路
US14/939,448 US10426431B2 (en) 2014-11-19 2015-11-12 Protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014234525A JP6415265B2 (ja) 2014-11-19 2014-11-19 保護回路

Publications (3)

Publication Number Publication Date
JP2016100400A JP2016100400A (ja) 2016-05-30
JP2016100400A5 true JP2016100400A5 (enExample) 2017-12-28
JP6415265B2 JP6415265B2 (ja) 2018-10-31

Family

ID=55962566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014234525A Active JP6415265B2 (ja) 2014-11-19 2014-11-19 保護回路

Country Status (2)

Country Link
US (1) US10426431B2 (enExample)
JP (1) JP6415265B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6415265B2 (ja) * 2014-11-19 2018-10-31 キヤノン株式会社 保護回路
CN109448773A (zh) * 2018-11-28 2019-03-08 合肥博雅半导体有限公司 一种减小电压差的电压传递电路、存储芯片及其控制方法
CN110959193B (zh) * 2019-02-21 2023-09-05 深圳市汇顶科技股份有限公司 具有低阈值电压和高击穿电压的二极管
EP3855624A1 (en) * 2020-01-22 2021-07-28 Infineon Technologies AG Overvoltage protection circuit and device
CN112383022A (zh) * 2020-11-17 2021-02-19 深圳佑驾创新科技有限公司 接口保护电路及rs232连接器
US12166250B2 (en) 2021-12-28 2024-12-10 Toyota Motor Engineering & Manufacturing North America, Inc. System and method for indirectly monitoring an isolation resistance of one or more fuel cells
US12089991B2 (en) * 2022-05-18 2024-09-17 Verasonics, Inc. Ultrasound transmitter with low distortion and concurrent receive

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548021A (ja) 1991-08-09 1993-02-26 Sumitomo Metal Ind Ltd 半導体保護回路
DE19534603C1 (de) * 1995-09-18 1997-05-22 Siemens Ag Schaltungsanordnung zum Erkennen des Leerlaufs einer Last
DE102009045052B4 (de) * 2008-09-30 2013-04-04 Infineon Technologies Ag Bereitstellen einer Versorgungsspannung für eine Ansteuerschaltung eines Halbleiterschaltelements
JP5558938B2 (ja) * 2010-06-30 2014-07-23 日立アロカメディカル株式会社 超音波診断装置の受信入力保護回路
US20160087579A1 (en) * 2011-11-20 2016-03-24 Solexel, Inc. Smart photovoltaic cells and modules
US9564828B2 (en) * 2012-01-20 2017-02-07 Osram Sylvania Inc. Auxiliary power supply for AC powered electronics
ITTV20120026A1 (it) * 2012-02-22 2013-08-23 Fond Don Carlo Gnocchi Onlus Un dispositivo multiplexer ad alto voltaggio per la commutazione di impulsi di corrente
JP5594546B2 (ja) 2012-03-02 2014-09-24 横河電機株式会社 入力保護回路
JP5990437B2 (ja) * 2012-09-10 2016-09-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US9245888B2 (en) * 2012-09-29 2016-01-26 Infineon Technologies Ag Reverse polarity protection for n-substrate high-side switches
US9893175B2 (en) * 2013-09-30 2018-02-13 Infineon Technologies Austria Ag Integrated circuit with a power transistor and a driver circuit integrated in a common semiconductor body
JP6415265B2 (ja) * 2014-11-19 2018-10-31 キヤノン株式会社 保護回路
WO2017009990A1 (ja) * 2015-07-15 2017-01-19 株式会社 東芝 半導体装置
US10756720B2 (en) * 2016-10-17 2020-08-25 Infineon Technologies Ag Driver circuit for electronic switch

Similar Documents

Publication Publication Date Title
JP2016100400A5 (enExample)
JP2014202778A5 (enExample)
JP2015129903A5 (ja) 半導体装置
JP2017004589A5 (ja) 半導体装置
JP2016129394A5 (enExample)
JP2015188209A5 (enExample)
JP2015035803A5 (enExample)
TW201612671A (en) Current reference circuits
JP2013235564A5 (enExample)
JP2017521963A5 (enExample)
JP2015062278A5 (ja) 信号処理回路
JP2014142350A5 (enExample)
US10426431B2 (en) Protection circuit
JP2018530298A5 (enExample)
GB2550778A (en) Mismatch and noise insensitive STT MRAM
JP2013257545A5 (ja) 表示装置
JP2017175288A5 (enExample)
JP2018512812A5 (enExample)
JP2015156640A5 (ja) 情報処理装置
JP2019012753A5 (enExample)
JP2018128868A5 (enExample)
AR103936A1 (es) Amplificador adaptado para supresión de ruido
JP2016535487A5 (enExample)
JP2014207667A5 (ja) 半導体装置
JP2014075785A5 (enExample)