AR103936A1 - Amplificador adaptado para supresión de ruido - Google Patents
Amplificador adaptado para supresión de ruidoInfo
- Publication number
- AR103936A1 AR103936A1 ARP160100685A ARP160100685A AR103936A1 AR 103936 A1 AR103936 A1 AR 103936A1 AR P160100685 A ARP160100685 A AR P160100685A AR P160100685 A ARP160100685 A AR P160100685A AR 103936 A1 AR103936 A1 AR 103936A1
- Authority
- AR
- Argentina
- Prior art keywords
- coupled
- output
- transistor
- input
- drain
- Prior art date
Links
- 230000001629 suppression Effects 0.000 title abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 4
- 101100545229 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) ZDS2 gene Proteins 0.000 abstract 3
- 101100113084 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mcs2 gene Proteins 0.000 abstract 3
- 101100167209 Ustilago maydis (strain 521 / FGSC 9021) CHS8 gene Proteins 0.000 abstract 3
- 230000001939 inductive effect Effects 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/06—A balun, i.e. balanced to or from unbalanced converter, being present at the input of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/333—A frequency modulator or demodulator being used in the amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45306—Indexing scheme relating to differential amplifiers the common gate stage implemented as dif amp eventually for cascode dif amp
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45318—Indexing scheme relating to differential amplifiers the AAC comprising a cross coupling circuit, e.g. two extra transistors cross coupled
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
- H04B1/12—Neutralising, balancing, or compensation arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
Un amplificador (100) adaptado para la supresión de ruido comprende una primera entrada (102) para recibir una primera señal de entrada y una segunda entrada (104) para recibir una segunda señal de entrada, donde las primeras y segundas señales de entrada constituyen un par diferencial. Una primera salida (106) suministra una primera señal de salida y una segunda salida (108) suministra una segunda señal de salida, donde las primeras y segundas señales de salida constituyen un par diferencial. Un primer transistor (MCG₁) tiene un primer drenaje (110) acoplado a la primera salida (106) de modo que toda la corriente de la señal, excepto las pérdidas parásitas, que fluye a través del primer drenaje (110) fluya a través de la primera salida (106), y el primer transistor (MCG₁) además tiene una primera fuente (112) acoplada a la primera entrada (102). Un segundo transistor (MCS₁) tiene una segunda compuerta (116) acoplada a la primera entrada (102), un segundo drenaje (118) acoplado a la segunda salida (108) de modo que toda la corriente de la señal, excepto las pérdidas parasitas, que fluye a través del segundo drenaje (118) fluya a través de la segunda salida (108), y el segundo transistor (MCS₁) además tiene una segunda fuente (120) acoplada a un primera vía de voltaje (122). Un tercer transistor (MCS₂) tiene una tercera compuerta (124) acoplada a la segunda entrada (104), un tercer drenaje (126) acoplado a la primera salida (106) de modo que toda la corriente de la señal, excepto las pérdidas parásitas, que fluye a través del tercer drenaje (126) fluya a través de la primera salida (106), y el tercer transistor (MCS₂) además tiene una tercera fuente (128) acoplada a la primera vía de voltaje (122). Un cuarto transistor (MCG₂) tiene un cuarto drenaje (130) acoplado a la segunda salida (108) de modo que toda la corriente de la señal, excepto las pérdidas parásitas, que fluye a través del cuarto drenaje (130) fluya a través de la segunda salida (108), y el cuarto transistor (MCG₂) además tiene una cuarta fuente (132) acoplada a la segunda entrada (104). Una primera carga (ZL₁) está acoplada entre la primera salida (106) y una segunda vía de voltaje (136). Una segunda carga (ZL₂) está acoplada entre la segunda salida (108) y la segunda vía de voltaje (136). Un primer elemento inductivo (L₁) está acoplado entre la primera entrada (102) y una tercera vía de voltaje (138), y un segundo elemento inductivo (L₂) está acoplado entre la segunda entrada (104) y la tercera vía de voltaje (138). La transconductancia del primer transistor (MCG₁) es sustancialmente igual a la transconductancia del cuarto transistor (MCG₂), dentro de ± 5%, y la transconductancia del segundo transistor (MCS₁) es sustancialmente igual a la transconductancia del tercer transistor (MCS₂), dentro de ± 5%.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2015/055454 WO2016146162A1 (en) | 2015-03-16 | 2015-03-16 | Amplifier adapted for noise suppression |
Publications (1)
Publication Number | Publication Date |
---|---|
AR103936A1 true AR103936A1 (es) | 2017-06-14 |
Family
ID=52823599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP160100685A AR103936A1 (es) | 2015-03-16 | 2016-03-15 | Amplificador adaptado para supresión de ruido |
Country Status (6)
Country | Link |
---|---|
US (2) | US9806677B2 (es) |
EP (1) | EP3272007B1 (es) |
CN (2) | CN112491366B (es) |
AR (1) | AR103936A1 (es) |
BR (1) | BR112017018749B1 (es) |
WO (1) | WO2016146162A1 (es) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016146162A1 (en) * | 2015-03-16 | 2016-09-22 | Telefonaktiebolaget Lm Ericsson (Publ) | Amplifier adapted for noise suppression |
CN107579713B (zh) * | 2017-09-29 | 2020-12-04 | 清华大学 | 一种新型跨导运算放大器电路 |
TWI670930B (zh) * | 2018-12-18 | 2019-09-01 | 財團法人工業技術研究院 | 無線接收裝置 |
KR102531301B1 (ko) * | 2019-09-26 | 2023-05-10 | 선전 구딕스 테크놀로지 컴퍼니, 리미티드 | 상호컨덕턴스 증폭기 및 칩 |
US11245366B2 (en) | 2020-02-13 | 2022-02-08 | Analog Devices, Inc. | Distributed amplifiers with controllable linearization |
CN114499425A (zh) * | 2022-01-10 | 2022-05-13 | 电子科技大学 | 一种基于中和电容的高稳定性差分共源放大器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4390848A (en) | 1981-02-12 | 1983-06-28 | Signetics | Linear transconductance amplifier |
US6509796B2 (en) | 2000-02-15 | 2003-01-21 | Broadcom Corporation | Variable transconductance variable gain amplifier utilizing a degenerated differential pair |
US7889007B2 (en) * | 2005-08-02 | 2011-02-15 | Qualcomm, Incorporated | Differential amplifier with active post-distortion linearization |
US7944298B2 (en) * | 2007-12-18 | 2011-05-17 | Qualcomm, Incorporated | Low noise and low input capacitance differential MDS LNA |
US8306494B2 (en) * | 2008-08-14 | 2012-11-06 | Broadcom Corporation | Method and system for a single-ended input low noise amplifier with differential output |
US20100041316A1 (en) | 2008-08-14 | 2010-02-18 | Yulin Wang | Method for an improved chemical mechanical polishing system |
KR101682375B1 (ko) * | 2010-07-12 | 2016-12-07 | 삼성전자주식회사 | 구동 증폭기 |
TWI463802B (zh) | 2012-04-23 | 2014-12-01 | Univ Nat Taiwan | 差動訊號校正電路 |
WO2016146162A1 (en) * | 2015-03-16 | 2016-09-22 | Telefonaktiebolaget Lm Ericsson (Publ) | Amplifier adapted for noise suppression |
-
2015
- 2015-03-16 WO PCT/EP2015/055454 patent/WO2016146162A1/en active Application Filing
- 2015-03-16 CN CN202011304759.0A patent/CN112491366B/zh active Active
- 2015-03-16 EP EP15715174.7A patent/EP3272007B1/en active Active
- 2015-03-16 CN CN201580077891.3A patent/CN107408927B/zh active Active
- 2015-03-16 US US14/913,466 patent/US9806677B2/en active Active
- 2015-03-16 BR BR112017018749-3A patent/BR112017018749B1/pt active IP Right Grant
-
2016
- 2016-03-15 AR ARP160100685A patent/AR103936A1/es active IP Right Grant
-
2017
- 2017-10-11 US US15/730,133 patent/US10326410B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3272007A1 (en) | 2018-01-24 |
CN112491366A (zh) | 2021-03-12 |
CN112491366B (zh) | 2024-03-08 |
CN107408927B (zh) | 2020-12-01 |
US10326410B2 (en) | 2019-06-18 |
EP3272007B1 (en) | 2022-07-06 |
BR112017018749B1 (pt) | 2022-10-04 |
US20180034420A1 (en) | 2018-02-01 |
US9806677B2 (en) | 2017-10-31 |
WO2016146162A1 (en) | 2016-09-22 |
BR112017018749A2 (pt) | 2018-04-17 |
CN107408927A (zh) | 2017-11-28 |
US20170040951A1 (en) | 2017-02-09 |
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