CN109478549A - 应用于集成电路之静电放电防护电路 - Google Patents

应用于集成电路之静电放电防护电路 Download PDF

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Publication number
CN109478549A
CN109478549A CN201780000117.1A CN201780000117A CN109478549A CN 109478549 A CN109478549 A CN 109478549A CN 201780000117 A CN201780000117 A CN 201780000117A CN 109478549 A CN109478549 A CN 109478549A
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esd protection
protection circuit
type
coupled
voltage
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CN201780000117.1A
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CN109478549B (zh
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李宗隆
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
    • H01L27/0277—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/0281—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements field effect transistors in a "Darlington-like" configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

一种静电放电防护电路(10)，包括一第一N型晶体管(Q1)、一第二N型晶体管(Q2)以及一高电位追踪电路(TH)，高电位追踪电路(TH)包含有一第一输入端(In_1)、一第二输入端(In_2)及一输出端(Out)，第一输入端(In_1)耦接于金属垫(PAD)，接收一金属垫电压(VPAD)；第二输入端(In_2)接收一电源电压(VDDIO)；输出端(Out)耦接于第二N型晶体管(Q2)，用来输出一高电位追踪电压(VE2)，其中高电位追踪电压(VE2)大于或等于金属垫电压(VPAD)。

Description

PCT国内申请，说明书已公开。

Claims (24)

  1. PCT国内申请，权利要求书已公开。
CN201780000117.1A 2016-09-26 2017-02-22 应用于集成电路之静电放电防护电路 Active CN109478549B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CNPCT/CN2016/100109 2016-09-26
CN2016100109 2016-09-26
PCT/CN2017/074450 WO2018053991A1 (zh) 2016-09-26 2017-02-22 应用于集成电路之静电放电防护电路

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CN109478549A true CN109478549A (zh) 2019-03-15
CN109478549B CN109478549B (zh) 2021-05-11

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EP (1) EP3324439B1 (zh)
KR (1) KR102001899B1 (zh)
CN (1) CN109478549B (zh)
WO (1) WO2018053991A1 (zh)

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
US20230006060A1 (en) * 2021-07-01 2023-01-05 Texas Instruments Incorporated Reducing transistor breakdown in a power fet current sense stack

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1649142A (zh) * 2004-01-19 2005-08-03 财团法人工业技术研究院 静电放电防护电路及静电放电防护方法
CN1805142A (zh) * 2005-12-07 2006-07-19 威盛电子股份有限公司 静电放电防护电路及相关技术
CN101030574A (zh) * 2006-03-02 2007-09-05 财团法人工业技术研究院 用于混压输出入接口之耐高压电源线间静电防护电路
CN101192606A (zh) * 2006-12-01 2008-06-04 旺宏电子股份有限公司 静电放电防护电路
CN101192753A (zh) * 2006-11-24 2008-06-04 上海华虹Nec电子有限公司 器件充电模式静电放电保护电路及结构
US20130099297A1 (en) * 2011-10-20 2013-04-25 Macronix International Co., Ltd. Electrostatic discharge protection device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226486A (ja) * 1994-02-15 1995-08-22 Nissan Motor Co Ltd 半導体装置の保護回路
US6399990B1 (en) * 2000-03-21 2002-06-04 International Business Machines Corporation Isolated well ESD device
US20060065932A1 (en) * 2004-09-30 2006-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit to improve ESD performance made by fully silicided process
TW200739872A (en) * 2006-04-04 2007-10-16 Univ Nat Chiao Tung Power line electrostatic discharge protection circuit featuring triple voltage tolerance
JP2009087962A (ja) * 2007-09-27 2009-04-23 Panasonic Corp 保護回路及び半導体集積回路
JP2009130119A (ja) * 2007-11-22 2009-06-11 Toshiba Corp 半導体集積回路
JP2009218296A (ja) * 2008-03-07 2009-09-24 Rohm Co Ltd 保護回路
US8102002B2 (en) * 2008-12-16 2012-01-24 Analog Devices, Inc. System and method for isolated NMOS-based ESD clamp cell
US8134813B2 (en) * 2009-01-29 2012-03-13 Xilinx, Inc. Method and apparatus to reduce footprint of ESD protection within an integrated circuit
US8427796B2 (en) * 2010-01-19 2013-04-23 Qualcomm, Incorporated High voltage, high frequency ESD protection circuit for RF ICs

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1649142A (zh) * 2004-01-19 2005-08-03 财团法人工业技术研究院 静电放电防护电路及静电放电防护方法
CN1805142A (zh) * 2005-12-07 2006-07-19 威盛电子股份有限公司 静电放电防护电路及相关技术
CN101030574A (zh) * 2006-03-02 2007-09-05 财团法人工业技术研究院 用于混压输出入接口之耐高压电源线间静电防护电路
CN101192753A (zh) * 2006-11-24 2008-06-04 上海华虹Nec电子有限公司 器件充电模式静电放电保护电路及结构
CN101192606A (zh) * 2006-12-01 2008-06-04 旺宏电子股份有限公司 静电放电防护电路
US20130099297A1 (en) * 2011-10-20 2013-04-25 Macronix International Co., Ltd. Electrostatic discharge protection device

Also Published As

Publication number Publication date
EP3324439A4 (en) 2018-09-12
CN109478549B (zh) 2021-05-11
KR20180044850A (ko) 2018-05-03
EP3324439A1 (en) 2018-05-23
EP3324439B1 (en) 2020-09-02
WO2018053991A1 (zh) 2018-03-29
KR102001899B1 (ko) 2019-10-21

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