KR102425131B9 - 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자 - Google Patents

그래핀 트랜지스터 및 이를 이용한 3진 논리 소자

Info

Publication number
KR102425131B9
KR102425131B9 KR1020160015088A KR20160015088A KR102425131B9 KR 102425131 B9 KR102425131 B9 KR 102425131B9 KR 1020160015088 A KR1020160015088 A KR 1020160015088A KR 20160015088 A KR20160015088 A KR 20160015088A KR 102425131 B9 KR102425131 B9 KR 102425131B9
Authority
KR
South Korea
Prior art keywords
same
logic device
graphene transistor
ternary logic
ternary
Prior art date
Application number
KR1020160015088A
Other languages
English (en)
Other versions
KR20170093547A (ko
KR102425131B1 (ko
Inventor
이병훈
김윤지
김소영
Original Assignee
광주과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 광주과학기술원 filed Critical 광주과학기술원
Priority to KR1020160015088A priority Critical patent/KR102425131B1/ko
Priority to US15/424,154 priority patent/US10109746B2/en
Publication of KR20170093547A publication Critical patent/KR20170093547A/ko
Application granted granted Critical
Publication of KR102425131B1 publication Critical patent/KR102425131B1/ko
Publication of KR102425131B9 publication Critical patent/KR102425131B9/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020160015088A 2016-02-05 2016-02-05 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자 KR102425131B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160015088A KR102425131B1 (ko) 2016-02-05 2016-02-05 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자
US15/424,154 US10109746B2 (en) 2016-02-05 2017-02-03 Graphene transistor and ternary logic device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160015088A KR102425131B1 (ko) 2016-02-05 2016-02-05 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자

Publications (3)

Publication Number Publication Date
KR20170093547A KR20170093547A (ko) 2017-08-16
KR102425131B1 KR102425131B1 (ko) 2022-07-26
KR102425131B9 true KR102425131B9 (ko) 2022-12-05

Family

ID=59496465

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160015088A KR102425131B1 (ko) 2016-02-05 2016-02-05 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자

Country Status (2)

Country Link
US (1) US10109746B2 (ko)
KR (1) KR102425131B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2570128B (en) * 2018-01-11 2022-07-20 Paragraf Ltd A method of making a Graphene transistor and devices
US10304967B1 (en) 2018-03-02 2019-05-28 Texas Instruments Incorporated Integration of graphene and boron nitride hetero-structure device over semiconductor layer
KR102059811B1 (ko) * 2018-05-31 2019-12-27 주식회사 엑스와이지플랫폼 Rgo 기반의 바이오 센서 및 그 제조 방법, 바이오 물질 검출 방법
KR102271442B1 (ko) * 2019-10-30 2021-07-01 한국과학기술연구원 피드백 전계 효과 트랜지스터 및 이를 포함하는 광 센서
KR102336607B1 (ko) * 2019-12-30 2021-12-09 울산과학기술원 터널 전계효과트랜지스터 및 이를 포함하는 삼진 인버터
US12009393B2 (en) 2019-12-30 2024-06-11 Unist(Ulsan National Institute Of Science And Technology) Tunnel field effect transistor and ternary inverter comprising same
KR102353462B1 (ko) * 2020-07-06 2022-01-20 인하대학교 산학협력단 3진 인버터 소자
KR102520629B1 (ko) * 2021-06-22 2023-04-11 울산과학기술원 3진수 논리회로
KR102578614B1 (ko) 2021-09-10 2023-09-15 한국과학기술원 플래시 메모리를 포함하는 삼진 논리회로 및 제작 방법
KR102545055B1 (ko) 2021-11-03 2023-06-21 성균관대학교산학협력단 다진법 연산을 위한 준-이종 반도체 접합 전자소자 및 이의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9024300B2 (en) * 2010-05-13 2015-05-05 Nokia Corporation Manufacture of graphene-based apparatus
US8193032B2 (en) * 2010-06-29 2012-06-05 International Business Machines Corporation Ultrathin spacer formation for carbon-based FET
GB201104824D0 (en) * 2011-03-22 2011-05-04 Univ Manchester Structures and methods relating to graphene
US9041440B2 (en) * 2013-03-01 2015-05-26 Purdue Research Foundation Graphene-based frequency tripler

Also Published As

Publication number Publication date
KR20170093547A (ko) 2017-08-16
US10109746B2 (en) 2018-10-23
US20170229587A1 (en) 2017-08-10
KR102425131B1 (ko) 2022-07-26

Similar Documents

Publication Publication Date Title
KR102425131B9 (ko) 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자
ZA202003788B (en) Composition based on probiotics and uses thereof
EP3400620A4 (en) DISPLAY DEVICE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
SG10201502299QA (en) Vertical probe device and supporter used in the same
HK1244470A1 (zh) 車輛去泥清洗裝置
IL265471A (en) Pulling-oligonucleotide conjugates and their uses
TWI562334B (en) Semiconductor device and methods for forming the same
EP3563436C0 (en) HOLE TRANSPORT MATERIAL AND PHOTOVOLTAIC DEVICE USING THE SAME
EP3522119A4 (en) PORTIC DEVICE AND GATE DEVICE ARRANGEMENT STRUCTURE
GB2569879B (en) Pump-storage device and transportation tool including the same
GB201621043D0 (en) Ultra-lateral power transistor and driver structures
IL265962A (en) Modified non-cytotoxic cells and their use
TWI560671B (en) Gate driver and display device using the same
PT3544637T (pt) Conjugados omv-antigénio nativos e sua utilização
SG10201602152UA (en) Improved spreader and use thereof
IL265531A (en) N 3 -cyclically substituted thienouraciles and use thereof
GB2571047B (en) Movements mechanism and article including the same
SG10201912594XA (en) Sealing composition and semiconductor device
IL249122A0 (en) History of imidazole- or 4,2,1-triazole and their use
IL269737A (en) Microfluidic devices and methods of using microfluidic devices
IL267258A (en) Phenoxyphenylamidines and the use thereof as fungicides
GB2553016B (en) Storage device and storage element
GB201718575D0 (en) Sink apparatus and use thereof
Finkel et al. The Thin Line between Love and Wrath
PL3417057T3 (pl) Arabinanaza i jej zastosowania

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]