JP2016513886A5 - - Google Patents

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Publication number
JP2016513886A5
JP2016513886A5 JP2016501078A JP2016501078A JP2016513886A5 JP 2016513886 A5 JP2016513886 A5 JP 2016513886A5 JP 2016501078 A JP2016501078 A JP 2016501078A JP 2016501078 A JP2016501078 A JP 2016501078A JP 2016513886 A5 JP2016513886 A5 JP 2016513886A5
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JP
Japan
Prior art keywords
channel transistor
input device
gate
source
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016501078A
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English (en)
Japanese (ja)
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JP6312792B2 (ja
JP2016513886A (ja
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Publication date
Priority claimed from US13/841,239 external-priority patent/US9929698B2/en
Application filed filed Critical
Publication of JP2016513886A publication Critical patent/JP2016513886A/ja
Publication of JP2016513886A5 publication Critical patent/JP2016513886A5/ja
Application granted granted Critical
Publication of JP6312792B2 publication Critical patent/JP6312792B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016501078A 2013-03-15 2014-03-10 無線周波数集積回路（ｒｆｉｃ）帯電デバイスモデル（ｃｄｍ）保護 Active JP6312792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/841,239 2013-03-15
US13/841,239 US9929698B2 (en) 2013-03-15 2013-03-15 Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
PCT/US2014/022816 WO2014150280A1 (en) 2013-03-15 2014-03-10 Radio frequency integrated circuit (rfic) charged-device model (cdm) protection

Publications (3)

Publication Number Publication Date
JP2016513886A JP2016513886A (ja) 2016-05-16
JP2016513886A5 true JP2016513886A5 (enExample) 2017-03-23
JP6312792B2 JP6312792B2 (ja) 2018-04-18

Family

ID=50390294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016501078A Active JP6312792B2 (ja) 2013-03-15 2014-03-10 無線周波数集積回路（ｒｆｉｃ）帯電デバイスモデル（ｃｄｍ）保護

Country Status (6)

Country Link
US (2) US9929698B2 (enExample)
EP (1) EP2973704B1 (enExample)
JP (1) JP6312792B2 (enExample)
KR (1) KR20150132335A (enExample)
CN (1) CN105190886B (enExample)
WO (1) WO2014150280A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5676766B2 (ja) * 2011-08-22 2015-02-25 ルネサスエレクトロニクス株式会社 半導体装置
EP2741330A1 (en) * 2012-12-06 2014-06-11 Nxp B.V. ESD protection
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US9608437B2 (en) * 2013-09-12 2017-03-28 Qualcomm Incorporated Electro-static discharge protection for integrated circuits
US9899961B2 (en) * 2015-02-15 2018-02-20 Skyworks Solutions, Inc. Enhanced amplifier efficiency through cascode current steering
US9559640B2 (en) * 2015-02-26 2017-01-31 Qualcomm Incorporated Electrostatic discharge protection for CMOS amplifier
US9882531B1 (en) 2016-09-16 2018-01-30 Peregrine Semiconductor Corporation Body tie optimization for stacked transistor amplifier
JP6761374B2 (ja) * 2017-05-25 2020-09-23 株式会社東芝 半導体装置
KR102066008B1 (ko) * 2018-07-16 2020-01-14 주식회사 다이얼로그 세미컨덕터 코리아 최대 정격 성능이 개선된 lna
CN109193971A (zh) * 2018-10-25 2019-01-11 叶宝华 储能脉冲装置
AU2019477256B2 (en) * 2019-12-05 2023-08-17 Wenjing Wu Micro-energy collection apparatus and method
US11462904B2 (en) * 2021-01-20 2022-10-04 Hangzhou Geo-Chip Technology Co., Ltd. Apparatus for protection against electrostatic discharge and method of manufacturing the same
JP2023090176A (ja) 2021-12-17 2023-06-29 キオクシア株式会社 半導体集積回路および受信装置
US12439702B2 (en) * 2022-05-09 2025-10-07 Nxp B.V. Electrostatic discharge protection for wireless device

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Publication number Priority date Publication date Assignee Title
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
US5276350A (en) 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
US5917220A (en) * 1996-12-31 1999-06-29 Stmicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US6268242B1 (en) * 1997-12-31 2001-07-31 Richard K. Williams Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6404269B1 (en) * 1999-09-17 2002-06-11 International Business Machines Corporation Low power SOI ESD buffer driver networks having dynamic threshold MOSFETS
US20010043449A1 (en) 2000-05-15 2001-11-22 Nec Corporation ESD protection apparatus and method for fabricating the same
JP3633880B2 (ja) 2000-05-15 2005-03-30 Ｎｅｃエレクトロニクス株式会社 Ｅｓｄ保護装置及びその製造方法
US6507471B2 (en) * 2000-12-07 2003-01-14 Koninklijke Philips Electronics N.V. ESD protection devices
US6894567B2 (en) 2001-12-04 2005-05-17 Koninklijke Philips Electronics N.V. ESD protection circuit for use in RF CMOS IC design
WO2005094522A2 (en) 2004-03-23 2005-10-13 Sarnoff Corporation Method and apparatus for protecting a gate oxide using source/bulk pumping
US7443225B2 (en) * 2006-06-30 2008-10-28 Alpha & Omega Semiconductor, Ltd. Thermally stable semiconductor power device
US8053808B2 (en) * 2007-05-21 2011-11-08 Alpha & Omega Semiconductor, Ltd. Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
US7973365B2 (en) 2008-01-25 2011-07-05 Infineon Technologies Ag Integrated RF ESD protection for high frequency circuits
JP2009253699A (ja) * 2008-04-07 2009-10-29 Toyota Motor Corp 半導体素子の駆動回路
US8213142B2 (en) 2008-10-29 2012-07-03 Qualcomm, Incorporated Amplifier with improved ESD protection circuitry
US7902604B2 (en) 2009-02-09 2011-03-08 Alpha & Omega Semiconductor, Inc. Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
EP2293331A1 (en) 2009-08-27 2011-03-09 Imec Method for designing integrated electronic circuits having ESD protection and circuits obtained thereof
US8427796B2 (en) 2010-01-19 2013-04-23 Qualcomm, Incorporated High voltage, high frequency ESD protection circuit for RF ICs
US8482888B2 (en) 2010-05-20 2013-07-09 Taiwan Semiconductor Manufacturing Co. Ltd. ESD block with shared noise optimization and CDM ESD protection for RF circuits
US8861149B2 (en) 2011-01-07 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection devices and methods for forming ESD protection devices
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US20140268446A1 (en) * 2013-03-15 2014-09-18 Qualcomm Incorporated Radio frequency integrated circuit (rfic) charged-device model (cdm) protection

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