CN105190886B - 射频集成电路(rfic)充电器件模型(cdm)保护 - Google Patents

射频集成电路(rfic)充电器件模型(cdm)保护 Download PDF

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Publication number
CN105190886B
CN105190886B CN201480014492.8A CN201480014492A CN105190886B CN 105190886 B CN105190886 B CN 105190886B CN 201480014492 A CN201480014492 A CN 201480014492A CN 105190886 B CN105190886 B CN 105190886B
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CN
China
Prior art keywords
channel transistor
coupled
diode
voltage
circuit system
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CN201480014492.8A
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English (en)
Chinese (zh)
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CN105190886A (zh
Inventor
P·S·S·古德姆
H·卡特里
D·V·歌德博尔
E·R·沃莱
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
CN201480014492.8A 2013-03-15 2014-03-10 射频集成电路(rfic)充电器件模型(cdm)保护 Active CN105190886B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/841,239 2013-03-15
US13/841,239 US9929698B2 (en) 2013-03-15 2013-03-15 Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
PCT/US2014/022816 WO2014150280A1 (en) 2013-03-15 2014-03-10 Radio frequency integrated circuit (rfic) charged-device model (cdm) protection

Publications (2)

Publication Number Publication Date
CN105190886A CN105190886A (zh) 2015-12-23
CN105190886B true CN105190886B (zh) 2019-09-10

Family

ID=50390294

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480014492.8A Active CN105190886B (zh) 2013-03-15 2014-03-10 射频集成电路(rfic)充电器件模型(cdm)保护

Country Status (6)

Country Link
US (2) US9929698B2 (enExample)
EP (1) EP2973704B1 (enExample)
JP (1) JP6312792B2 (enExample)
KR (1) KR20150132335A (enExample)
CN (1) CN105190886B (enExample)
WO (1) WO2014150280A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP5676766B2 (ja) * 2011-08-22 2015-02-25 ルネサスエレクトロニクス株式会社 半導体装置
EP2741330A1 (en) * 2012-12-06 2014-06-11 Nxp B.V. ESD protection
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US9608437B2 (en) * 2013-09-12 2017-03-28 Qualcomm Incorporated Electro-static discharge protection for integrated circuits
US9899961B2 (en) * 2015-02-15 2018-02-20 Skyworks Solutions, Inc. Enhanced amplifier efficiency through cascode current steering
US9559640B2 (en) * 2015-02-26 2017-01-31 Qualcomm Incorporated Electrostatic discharge protection for CMOS amplifier
US9882531B1 (en) 2016-09-16 2018-01-30 Peregrine Semiconductor Corporation Body tie optimization for stacked transistor amplifier
JP6761374B2 (ja) * 2017-05-25 2020-09-23 株式会社東芝 半導体装置
KR102066008B1 (ko) * 2018-07-16 2020-01-14 주식회사 다이얼로그 세미컨덕터 코리아 최대 정격 성능이 개선된 lna
CN109193971A (zh) * 2018-10-25 2019-01-11 叶宝华 储能脉冲装置
AU2019477256B2 (en) * 2019-12-05 2023-08-17 Wenjing Wu Micro-energy collection apparatus and method
US11462904B2 (en) * 2021-01-20 2022-10-04 Hangzhou Geo-Chip Technology Co., Ltd. Apparatus for protection against electrostatic discharge and method of manufacturing the same
JP2023090176A (ja) 2021-12-17 2023-06-29 キオクシア株式会社 半導体集積回路および受信装置
US12439702B2 (en) * 2022-05-09 2025-10-07 Nxp B.V. Electrostatic discharge protection for wireless device

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JP2009253699A (ja) * 2008-04-07 2009-10-29 Toyota Motor Corp 半導体素子の駆動回路
CN101819972A (zh) * 2009-02-09 2010-09-01 万国半导体有限公司 一种用于功率器件击穿保护的栅漏箝位和静电放电保护电路
CN102255300A (zh) * 2010-05-20 2011-11-23 台湾积体电路制造股份有限公司 射频组件

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JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
US5276350A (en) 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
US5917220A (en) * 1996-12-31 1999-06-29 Stmicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US6268242B1 (en) * 1997-12-31 2001-07-31 Richard K. Williams Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6404269B1 (en) * 1999-09-17 2002-06-11 International Business Machines Corporation Low power SOI ESD buffer driver networks having dynamic threshold MOSFETS
US20010043449A1 (en) 2000-05-15 2001-11-22 Nec Corporation ESD protection apparatus and method for fabricating the same
JP3633880B2 (ja) 2000-05-15 2005-03-30 Ｎｅｃエレクトロニクス株式会社 Ｅｓｄ保護装置及びその製造方法
US6507471B2 (en) * 2000-12-07 2003-01-14 Koninklijke Philips Electronics N.V. ESD protection devices
US6894567B2 (en) 2001-12-04 2005-05-17 Koninklijke Philips Electronics N.V. ESD protection circuit for use in RF CMOS IC design
WO2005094522A2 (en) 2004-03-23 2005-10-13 Sarnoff Corporation Method and apparatus for protecting a gate oxide using source/bulk pumping
US7443225B2 (en) * 2006-06-30 2008-10-28 Alpha & Omega Semiconductor, Ltd. Thermally stable semiconductor power device
US8053808B2 (en) * 2007-05-21 2011-11-08 Alpha & Omega Semiconductor, Ltd. Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
US7973365B2 (en) 2008-01-25 2011-07-05 Infineon Technologies Ag Integrated RF ESD protection for high frequency circuits
US8213142B2 (en) 2008-10-29 2012-07-03 Qualcomm, Incorporated Amplifier with improved ESD protection circuitry
EP2293331A1 (en) 2009-08-27 2011-03-09 Imec Method for designing integrated electronic circuits having ESD protection and circuits obtained thereof
US8427796B2 (en) 2010-01-19 2013-04-23 Qualcomm, Incorporated High voltage, high frequency ESD protection circuit for RF ICs
US8861149B2 (en) 2011-01-07 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection devices and methods for forming ESD protection devices
US9929698B2 (en) * 2013-03-15 2018-03-27 Qualcomm Incorporated Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection
US20140268446A1 (en) * 2013-03-15 2014-09-18 Qualcomm Incorporated Radio frequency integrated circuit (rfic) charged-device model (cdm) protection

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JP2009253699A (ja) * 2008-04-07 2009-10-29 Toyota Motor Corp 半導体素子の駆動回路
CN101819972A (zh) * 2009-02-09 2010-09-01 万国半导体有限公司 一种用于功率器件击穿保护的栅漏箝位和静电放电保护电路
CN102255300A (zh) * 2010-05-20 2011-11-23 台湾积体电路制造股份有限公司 射频组件

Also Published As

Publication number Publication date
US9929698B2 (en) 2018-03-27
US20180175803A1 (en) 2018-06-21
WO2014150280A1 (en) 2014-09-25
EP2973704A1 (en) 2016-01-20
KR20150132335A (ko) 2015-11-25
EP2973704B1 (en) 2019-05-08
JP6312792B2 (ja) 2018-04-18
US20140268447A1 (en) 2014-09-18
JP2016513886A (ja) 2016-05-16
CN105190886A (zh) 2015-12-23

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