JP2016530845A5 - - Google Patents

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Publication number
JP2016530845A5
JP2016530845A5 JP2016542085A JP2016542085A JP2016530845A5 JP 2016530845 A5 JP2016530845 A5 JP 2016530845A5 JP 2016542085 A JP2016542085 A JP 2016542085A JP 2016542085 A JP2016542085 A JP 2016542085A JP 2016530845 A5 JP2016530845 A5 JP 2016530845A5
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JP
Japan
Prior art keywords
terminal
coupled
resistor
cascode transistor
power supply
Prior art date
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Application number
JP2016542085A
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English (en)
Japanese (ja)
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JP6567531B2 (ja
JP2016530845A (ja
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Priority claimed from US14/172,150 external-priority patent/US9219447B2/en
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Publication of JP2016530845A publication Critical patent/JP2016530845A/ja
Publication of JP2016530845A5 publication Critical patent/JP2016530845A5/ja
Application granted granted Critical
Publication of JP6567531B2 publication Critical patent/JP6567531B2/ja
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JP2016542085A 2013-09-11 2014-09-11 広帯域バイアス回路および方法 Active JP6567531B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361876347P 2013-09-11 2013-09-11
US61/876,347 2013-09-11
US14/172,150 US9219447B2 (en) 2013-09-11 2014-02-04 Wideband bias circuits and methods
US14/172,150 2014-02-04
PCT/US2014/055091 WO2015038712A1 (en) 2013-09-11 2014-09-11 Wideband bias circuits and methods

Publications (3)

Publication Number Publication Date
JP2016530845A JP2016530845A (ja) 2016-09-29
JP2016530845A5 true JP2016530845A5 (enExample) 2017-09-28
JP6567531B2 JP6567531B2 (ja) 2019-08-28

Family

ID=52625027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016542085A Active JP6567531B2 (ja) 2013-09-11 2014-09-11 広帯域バイアス回路および方法

Country Status (6)

Country Link
US (2) US9219447B2 (enExample)
EP (1) EP3044871B1 (enExample)
JP (1) JP6567531B2 (enExample)
KR (1) KR20160056907A (enExample)
CN (1) CN105765858B (enExample)
WO (1) WO2015038712A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9219447B2 (en) 2013-09-11 2015-12-22 Qualcomm Incorporated Wideband bias circuits and methods
US9252713B2 (en) * 2014-02-27 2016-02-02 Qualcomm Incorporated Bias circuits and methods for stacked devices
US9948252B1 (en) * 2017-04-06 2018-04-17 Psemi Corporation Device stack with novel gate capacitor topology
US10700643B2 (en) * 2017-09-22 2020-06-30 Qualcomm Incorporated Envelope-shaped bias for power amplifier
US10291194B2 (en) * 2017-10-09 2019-05-14 Infineon Technologies Ag System and method for biasing an RF circuit
TWI688203B (zh) * 2017-12-14 2020-03-11 財團法人工業技術研究院 寬頻轉阻放大器電路
CN111434034B (zh) * 2017-12-15 2022-04-12 华为技术有限公司 用于光通信的通带频率可调的差分共源共栅放大器
JP7071860B2 (ja) 2018-03-30 2022-05-19 株式会社村田製作所 増幅回路
IT201800010793A1 (it) * 2018-12-04 2020-06-04 St Microelectronics Srl Circuito di rilevazione, dispositivo e procedimento corrispondenti
CN114946122A (zh) * 2020-01-20 2022-08-26 华为技术有限公司 堆叠放大器、射频收发电路、设备及切换控制方法
US12113486B2 (en) * 2020-11-20 2024-10-08 The Boeing Company Amplifier with stacked transconducting cells in parallel and/or cascade “current mode” combining
CN116094469B (zh) * 2023-04-11 2023-06-30 南京米乐为微电子科技有限公司 一种共栅放大电路、低噪声放大器以及一种超宽带接收机
WO2025110196A1 (ja) * 2023-11-22 2025-05-30 株式会社村田製作所 電力増幅回路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394590A (en) * 1979-12-28 1983-07-19 International Rectifier Corp. Japan Ltd. Field effect transistor circuit arrangement
US6137367A (en) * 1998-03-24 2000-10-24 Amcom Communications, Inc. High power high impedance microwave devices for power applications
JP4821214B2 (ja) * 2005-08-26 2011-11-24 三菱電機株式会社 カスコード接続回路
US7355375B2 (en) 2005-09-30 2008-04-08 Nxp B.V. Dynamic bias circuit for use with a stacked device arrangement
WO2009060095A1 (en) 2007-11-09 2009-05-14 Nxp B.V. Electronic circuit with cascode amplifier
US8847689B2 (en) * 2009-08-19 2014-09-30 Qualcomm Incorporated Stacked amplifier with diode-based biasing
KR101266918B1 (ko) * 2009-09-14 2013-05-24 한국전자통신연구원 가변이득 광대역 피드백 저 잡음 증폭기
US8111104B2 (en) 2010-01-25 2012-02-07 Peregrine Semiconductor Corporation Biasing methods and devices for power amplifiers
US8120414B2 (en) 2010-06-01 2012-02-21 Enerdel, Inc. Low-noise current source
US8427241B2 (en) * 2011-05-24 2013-04-23 Amcom Communications, Inc. High efficiency, high frequency amplifiers
US8493154B1 (en) * 2011-10-28 2013-07-23 Berex Corporation Linearity enhancement on cascode gain block amplifier
WO2013067031A2 (en) 2011-11-04 2013-05-10 Skyworks Solutions, Inc. Apparatus and methods for power amplifiers
US9219447B2 (en) 2013-09-11 2015-12-22 Qualcomm Incorporated Wideband bias circuits and methods

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