JP2018501695A5 - - Google Patents

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Publication number
JP2018501695A5
JP2018501695A5 JP2017525591A JP2017525591A JP2018501695A5 JP 2018501695 A5 JP2018501695 A5 JP 2018501695A5 JP 2017525591 A JP2017525591 A JP 2017525591A JP 2017525591 A JP2017525591 A JP 2017525591A JP 2018501695 A5 JP2018501695 A5 JP 2018501695A5
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JP
Japan
Prior art keywords
transistor
drain terminal
signal
selectively
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017525591A
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English (en)
Japanese (ja)
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JP6686016B2 (ja
JP2018501695A (ja
Filing date
Publication date
Priority claimed from US14/540,900 external-priority patent/US9385901B2/en
Application filed filed Critical
Publication of JP2018501695A publication Critical patent/JP2018501695A/ja
Publication of JP2018501695A5 publication Critical patent/JP2018501695A5/ja
Application granted granted Critical
Publication of JP6686016B2 publication Critical patent/JP6686016B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2017525591A 2014-11-13 2015-09-30 帯域内キャリアアグリゲーションのための受信機フロントエンドアーキテクチャ Active JP6686016B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/540,900 2014-11-13
US14/540,900 US9385901B2 (en) 2014-11-13 2014-11-13 Receiver front end architecture for intra band carrier aggregation
PCT/US2015/053286 WO2016076962A1 (en) 2014-11-13 2015-09-30 Receiver front end architecture for intra band carrier aggregation

Publications (3)

Publication Number Publication Date
JP2018501695A JP2018501695A (ja) 2018-01-18
JP2018501695A5 true JP2018501695A5 (enExample) 2018-10-18
JP6686016B2 JP6686016B2 (ja) 2020-04-22

Family

ID=54337378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017525591A Active JP6686016B2 (ja) 2014-11-13 2015-09-30 帯域内キャリアアグリゲーションのための受信機フロントエンドアーキテクチャ

Country Status (5)

Country Link
US (1) US9385901B2 (enExample)
EP (1) EP3219016B1 (enExample)
JP (1) JP6686016B2 (enExample)
CN (2) CN107112957B (enExample)
WO (1) WO2016076962A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10381991B1 (en) 2018-02-02 2019-08-13 Psemi Corporation Drain sharing split LNA
US11159191B1 (en) 2020-09-11 2021-10-26 Apple Inc. Wireless amplifier circuitry for carrier aggregation
US11683062B2 (en) * 2021-08-17 2023-06-20 Qualcomm Incorporated Reconfigurable amplifier
US11539382B1 (en) 2021-10-19 2022-12-27 Psemi Corporation Supporting wideband inputs on RF receivers
US20250211281A1 (en) * 2023-12-21 2025-06-26 Texas Instruments Incorporated Integrated receiver transmitter switch

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9928355D0 (en) 1999-12-01 2000-01-26 Koninkl Philips Electronics Nv Amplifier
US6636119B2 (en) * 2000-12-21 2003-10-21 Koninklijke Philips Electronics N.V. Compact cascode radio frequency CMOS power amplifier
US6725030B2 (en) * 2000-12-28 2004-04-20 Koninklijke Philips Electronics N.V. CMOS radio frequency amplifier with inverter driver
DE10344878B4 (de) 2003-09-26 2014-05-28 Infineon Technologies Ag Differenzverstärkeranordnung mit Stromregelkreis und Verfahren zum Betreiben einer Differenzverstärkeranordnung
US7902925B2 (en) * 2005-08-02 2011-03-08 Qualcomm, Incorporated Amplifier with active post-distortion linearization
US7889007B2 (en) 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
US7420425B2 (en) * 2006-09-28 2008-09-02 Via Technologies, Inc. Power amplifier and method thereof
WO2008102788A1 (ja) * 2007-02-20 2008-08-28 Nagoya Industrial Science Research Institute プログラマブル低雑音増幅装置
US7701289B2 (en) 2007-10-24 2010-04-20 Industrial Technology Research Institute Variable gain amplifier including series-coupled cascode amplifiers
US7696828B2 (en) * 2008-01-04 2010-04-13 Qualcomm, Incorporated Multi-linearity mode LNA having a deboost current path
US7656229B2 (en) * 2008-01-28 2010-02-02 Qualcomm, Incorporated Method and apparatus for reducing intermodulation distortion in an electronic device having an amplifier circuit
US7936220B2 (en) 2008-12-12 2011-05-03 Qualcomm, Incorporated Techniques for improving amplifier linearity
US8031005B2 (en) 2009-03-23 2011-10-04 Qualcomm, Incorporated Amplifier supporting multiple gain modes
TWI472149B (zh) * 2010-03-02 2015-02-01 Marvell World Trade Ltd 雙載波放大器電路和方法
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
EP2590351A3 (en) * 2011-11-04 2013-05-22 ST-Ericsson SA Non-contiguous carrier aggregation
US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US8913976B2 (en) * 2012-10-23 2014-12-16 Qualcomm Incorporated Amplifiers with shunt switches
US8975968B2 (en) * 2013-01-25 2015-03-10 Qualcomm Incorporated Amplifiers with improved isolation
US9106185B2 (en) * 2013-03-11 2015-08-11 Qualcomm Incorporated Amplifiers with inductive degeneration and configurable gain and input matching

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