JP2015534420A5 - - Google Patents

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Publication number
JP2015534420A5
JP2015534420A5 JP2015542025A JP2015542025A JP2015534420A5 JP 2015534420 A5 JP2015534420 A5 JP 2015534420A5 JP 2015542025 A JP2015542025 A JP 2015542025A JP 2015542025 A JP2015542025 A JP 2015542025A JP 2015534420 A5 JP2015534420 A5 JP 2015534420A5
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JP
Japan
Prior art keywords
transistor
gain
band
coupled
gain transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015542025A
Other languages
English (en)
Japanese (ja)
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JP2015534420A (ja
Filing date
Publication date
Priority claimed from US13/677,017 external-priority patent/US9603187B2/en
Application filed filed Critical
Publication of JP2015534420A publication Critical patent/JP2015534420A/ja
Publication of JP2015534420A5 publication Critical patent/JP2015534420A5/ja
Pending legal-status Critical Current

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JP2015542025A 2012-11-14 2013-11-12 全帯域増幅器 Pending JP2015534420A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/677,017 2012-11-14
US13/677,017 US9603187B2 (en) 2012-11-14 2012-11-14 Omni-band amplifiers
PCT/US2013/069752 WO2014078333A2 (en) 2012-11-14 2013-11-12 Omni-band amplifiers

Publications (2)

Publication Number Publication Date
JP2015534420A JP2015534420A (ja) 2015-11-26
JP2015534420A5 true JP2015534420A5 (enExample) 2016-12-08

Family

ID=49725347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015542025A Pending JP2015534420A (ja) 2012-11-14 2013-11-12 全帯域増幅器

Country Status (6)

Country Link
US (1) US9603187B2 (enExample)
EP (2) EP2920879B1 (enExample)
JP (1) JP2015534420A (enExample)
KR (1) KR20150084908A (enExample)
CN (1) CN104798299B (enExample)
WO (1) WO2014078333A2 (enExample)

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US9723560B2 (en) 2014-05-22 2017-08-01 Qualcomm Incorporated Multi-stage amplifier with RC network
US9479131B2 (en) 2014-05-23 2016-10-25 Qualcomm Incorporated Carrier aggregation amplifier with dual gain control
US9300264B2 (en) 2014-08-22 2016-03-29 Mediatek Inc. Receiver arrangement and method of performing operations of receiver
US9369097B2 (en) * 2014-09-05 2016-06-14 Qualcomm Incorporated Multi-band low noise amplifier
US20160079946A1 (en) * 2014-09-12 2016-03-17 Qualcomm Incorporated Multi-band low noise amplifier with a shared degeneration inductor
US9431963B2 (en) 2014-09-19 2016-08-30 Qualcomm Incorporated Dual stage low noise amplifier for multiband receiver
US10211861B2 (en) * 2015-03-17 2019-02-19 Skyworks Solutions, Inc. Multi-mode integrated front end module
US9608569B2 (en) 2015-04-01 2017-03-28 Qualcomm Incorporated Linearizing scheme for baseband filter with active feedback
US9712195B2 (en) 2015-05-13 2017-07-18 Qualcomm Incorporated Radio frequency low noise amplifier with on-chip matching and built-in tunable filter
CN106330099B (zh) * 2015-06-30 2019-03-26 展讯通信（上海）有限公司 一种射频前端电路
US9774303B1 (en) * 2015-08-25 2017-09-26 Marvell International Ltd. Low-noise amplifier for intra-band non contiguous carrier agregation
US10177722B2 (en) 2016-01-12 2019-01-08 Qualcomm Incorporated Carrier aggregation low-noise amplifier with tunable integrated power splitter
SG11201901799UA (en) * 2016-08-31 2019-03-28 Skyworks Solutions Inc Multi-input amplifier with degeneration switching block and low loss bypass function
JP2019530379A (ja) * 2016-08-31 2019-10-17 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 利得モードによる反射損失及び不整合が改善された増幅器
US9941849B1 (en) 2017-02-10 2018-04-10 Psemi Corporation Programmable optimized band switching LNA for operation in multiple narrow-band frequency ranges
US9800273B1 (en) 2017-03-01 2017-10-24 Qualcomm Incorporated Wideband high linearity LNA with intra-band carrier aggregation support
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
US10038418B1 (en) 2017-04-04 2018-07-31 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
EP3461004B1 (en) * 2017-09-20 2021-04-28 Nxp B.V. An amplifier and a wireless signal receiver comprising said amplifier
WO2019142526A1 (ja) * 2018-01-19 2019-07-25 ソニーセミコンダクタソリューションズ株式会社 増幅回路および受信回路
US10797738B2 (en) * 2018-10-26 2020-10-06 Analog Devices, Inc. Segmented receiver for wireless communications
CN110719074B (zh) * 2019-09-23 2023-06-20 航天科工微电子系统研究院有限公司 一种可调谐的宽带低噪声放大器
WO2022153926A1 (ja) * 2021-01-13 2022-07-21 株式会社村田製作所 高周波回路および通信装置
CN115459793A (zh) * 2021-06-08 2022-12-09 开元通信技术（厦门）有限公司 一种射频装置
US12191820B2 (en) * 2021-11-11 2025-01-07 Samsung Electronics Co., Ltd. Low noise amplifier and receiver
CN114553155B (zh) * 2022-04-22 2022-08-16 成都嘉纳海威科技有限责任公司 一种覆盖基频的超宽带射频放大器
KR102874038B1 (ko) * 2023-10-11 2025-10-20 충남대학교산학협력단 잡음 상쇄가 가능한 가변 이득 증폭기 및 그 동작 방법

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US5015968A (en) * 1990-07-27 1991-05-14 Pacific Monolithics Feedback cascode amplifier
JP3563321B2 (ja) * 2000-03-22 2004-09-08 日本電信電話株式会社 マルチバンド高周波増幅回路
US7023272B2 (en) 2004-04-19 2006-04-04 Texas Instruments Incorporated Multi-band low noise amplifier system
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US7474158B1 (en) 2006-04-10 2009-01-06 Rf Micro Devices, Inc. Dynamic match low noise amplifier with reduced current consumption in low gain mode
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WO2010082235A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 可変利得増幅器およびそれを備えた高周波信号受信装置
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KR20110060735A (ko) * 2009-11-30 2011-06-08 한국전자통신연구원 고주파 변압기를 이용한 다중 대역 전력증폭기
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US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting

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