JP2015534420A - 全帯域増幅器 - Google Patents

全帯域増幅器 Download PDF

Info

Publication number
JP2015534420A
JP2015534420A JP2015542025A JP2015542025A JP2015534420A JP 2015534420 A JP2015534420 A JP 2015534420A JP 2015542025 A JP2015542025 A JP 2015542025A JP 2015542025 A JP2015542025 A JP 2015542025A JP 2015534420 A JP2015534420 A JP 2015534420A
Authority
JP
Japan
Prior art keywords
band
coupled
transistor
signal
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015542025A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015534420A5 (enExample
Inventor
タシック、アレクサンダー・ミオドラグ
デビルワラ、アノッシュ・ボミ
ナラソング、チューチャーン
バン・ザリンジ、クラス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2015534420A publication Critical patent/JP2015534420A/ja
Publication of JP2015534420A5 publication Critical patent/JP2015534420A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02—Terminal devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
JP2015542025A 2012-11-14 2013-11-12 全帯域増幅器 Pending JP2015534420A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/677,017 2012-11-14
US13/677,017 US9603187B2 (en) 2012-11-14 2012-11-14 Omni-band amplifiers
PCT/US2013/069752 WO2014078333A2 (en) 2012-11-14 2013-11-12 Omni-band amplifiers

Publications (2)

Publication Number Publication Date
JP2015534420A true JP2015534420A (ja) 2015-11-26
JP2015534420A5 JP2015534420A5 (enExample) 2016-12-08

Family

ID=49725347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015542025A Pending JP2015534420A (ja) 2012-11-14 2013-11-12 全帯域増幅器

Country Status (6)

Country Link
US (1) US9603187B2 (enExample)
EP (2) EP2920879B1 (enExample)
JP (1) JP2015534420A (enExample)
KR (1) KR20150084908A (enExample)
CN (1) CN104798299B (enExample)
WO (1) WO2014078333A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019142526A1 (ja) * 2018-01-19 2019-07-25 ソニーセミコンダクタソリューションズ株式会社 増幅回路および受信回路
JP2019528657A (ja) * 2016-08-31 2019-10-10 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. デジェネレーションスイッチングブロック及び低損失バイパス機能を有するマルチ入力増幅器
WO2022153926A1 (ja) * 2021-01-13 2022-07-21 株式会社村田製作所 高周波回路および通信装置

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9473336B2 (en) * 2014-05-16 2016-10-18 Qualcomm Incorporated Radio frequency (RF) front end having multiple low noise amplifier modules
US9723560B2 (en) 2014-05-22 2017-08-01 Qualcomm Incorporated Multi-stage amplifier with RC network
US9479131B2 (en) 2014-05-23 2016-10-25 Qualcomm Incorporated Carrier aggregation amplifier with dual gain control
US9300264B2 (en) 2014-08-22 2016-03-29 Mediatek Inc. Receiver arrangement and method of performing operations of receiver
US9369097B2 (en) * 2014-09-05 2016-06-14 Qualcomm Incorporated Multi-band low noise amplifier
US20160079946A1 (en) * 2014-09-12 2016-03-17 Qualcomm Incorporated Multi-band low noise amplifier with a shared degeneration inductor
US9431963B2 (en) 2014-09-19 2016-08-30 Qualcomm Incorporated Dual stage low noise amplifier for multiband receiver
US10211861B2 (en) * 2015-03-17 2019-02-19 Skyworks Solutions, Inc. Multi-mode integrated front end module
US9608569B2 (en) 2015-04-01 2017-03-28 Qualcomm Incorporated Linearizing scheme for baseband filter with active feedback
US9712195B2 (en) 2015-05-13 2017-07-18 Qualcomm Incorporated Radio frequency low noise amplifier with on-chip matching and built-in tunable filter
CN106330099B (zh) * 2015-06-30 2019-03-26 展讯通信（上海）有限公司 一种射频前端电路
US9774303B1 (en) * 2015-08-25 2017-09-26 Marvell International Ltd. Low-noise amplifier for intra-band non contiguous carrier agregation
US10177722B2 (en) 2016-01-12 2019-01-08 Qualcomm Incorporated Carrier aggregation low-noise amplifier with tunable integrated power splitter
JP2019530379A (ja) * 2016-08-31 2019-10-17 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 利得モードによる反射損失及び不整合が改善された増幅器
US9941849B1 (en) 2017-02-10 2018-04-10 Psemi Corporation Programmable optimized band switching LNA for operation in multiple narrow-band frequency ranges
US9800273B1 (en) 2017-03-01 2017-10-24 Qualcomm Incorporated Wideband high linearity LNA with intra-band carrier aggregation support
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
US10038418B1 (en) 2017-04-04 2018-07-31 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
EP3461004B1 (en) * 2017-09-20 2021-04-28 Nxp B.V. An amplifier and a wireless signal receiver comprising said amplifier
US10797738B2 (en) * 2018-10-26 2020-10-06 Analog Devices, Inc. Segmented receiver for wireless communications
CN110719074B (zh) * 2019-09-23 2023-06-20 航天科工微电子系统研究院有限公司 一种可调谐的宽带低噪声放大器
CN115459793A (zh) * 2021-06-08 2022-12-09 开元通信技术（厦门）有限公司 一种射频装置
US12191820B2 (en) * 2021-11-11 2025-01-07 Samsung Electronics Co., Ltd. Low noise amplifier and receiver
CN114553155B (zh) * 2022-04-22 2022-08-16 成都嘉纳海威科技有限责任公司 一种覆盖基频的超宽带射频放大器
KR102874038B1 (ko) * 2023-10-11 2025-10-20 충남대학교산학협력단 잡음 상쇄가 가능한 가변 이득 증폭기 및 그 동작 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080096516A1 (en) * 2006-10-17 2008-04-24 Samsung Electronics Co., Ltd. Multi-band low noise amplifier and multi-band radio frequency receiver including the same
US7474158B1 (en) * 2006-04-10 2009-01-06 Rf Micro Devices, Inc. Dynamic match low noise amplifier with reduced current consumption in low gain mode
JP2009010826A (ja) * 2007-06-29 2009-01-15 Sony Corp マルチバンド低雑音増幅器および無線通信装置
US20090195316A1 (en) * 2008-02-01 2009-08-06 Silicon Motion, Inc. Re-configurable low noise amplifier utilizing feedback capacitors
JP2010141673A (ja) * 2008-12-12 2010-06-24 Renesas Technology Corp 電力増幅回路
WO2011143504A1 (en) * 2010-05-13 2011-11-17 Qualcomm Incorporated Area efficient concurrent matching transceiver

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015968A (en) * 1990-07-27 1991-05-14 Pacific Monolithics Feedback cascode amplifier
JP3563321B2 (ja) * 2000-03-22 2004-09-08 日本電信電話株式会社 マルチバンド高周波増幅回路
US7023272B2 (en) 2004-04-19 2006-04-04 Texas Instruments Incorporated Multi-band low noise amplifier system
US7508260B2 (en) * 2005-08-24 2009-03-24 Freescale Semiconductor, Inc. Bypassable low noise amplifier topology with multi-tap transformer
TWI327416B (en) 2006-10-27 2010-07-11 Nat Univ Tsing Hua Cascode low noise amplifier with a source coupled active inductor
KR20080072383A (ko) 2007-02-02 2008-08-06 삼성전자주식회사 실리콘 튜너 및 그 신호 처리 방법
WO2010082235A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 可変利得増幅器およびそれを備えた高周波信号受信装置
US8022772B2 (en) * 2009-03-19 2011-09-20 Qualcomm Incorporated Cascode amplifier with protection circuitry
KR20110060735A (ko) * 2009-11-30 2011-06-08 한국전자통신연구원 고주파 변압기를 이용한 다중 대역 전력증폭기
WO2011088361A2 (en) * 2010-01-15 2011-07-21 Wispry, Inc. Tunable matching network circuit topology devices and methods
US8310314B2 (en) * 2010-09-06 2012-11-13 Mediatek Inc. Signal amplification circuits for receiving/transmitting signals according to input signal
KR101214761B1 (ko) * 2011-09-19 2013-01-09 삼성전기주식회사 다중대역 증폭기 및 다중대역 증폭방법
US8742853B2 (en) * 2011-10-25 2014-06-03 Marvell World Trade Ltd. Low-stress cascode structure
US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7474158B1 (en) * 2006-04-10 2009-01-06 Rf Micro Devices, Inc. Dynamic match low noise amplifier with reduced current consumption in low gain mode
US20080096516A1 (en) * 2006-10-17 2008-04-24 Samsung Electronics Co., Ltd. Multi-band low noise amplifier and multi-band radio frequency receiver including the same
JP2009010826A (ja) * 2007-06-29 2009-01-15 Sony Corp マルチバンド低雑音増幅器および無線通信装置
US20090195316A1 (en) * 2008-02-01 2009-08-06 Silicon Motion, Inc. Re-configurable low noise amplifier utilizing feedback capacitors
JP2010141673A (ja) * 2008-12-12 2010-06-24 Renesas Technology Corp 電力増幅回路
WO2011143504A1 (en) * 2010-05-13 2011-11-17 Qualcomm Incorporated Area efficient concurrent matching transceiver

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019528657A (ja) * 2016-08-31 2019-10-10 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. デジェネレーションスイッチングブロック及び低損失バイパス機能を有するマルチ入力増幅器
US11563460B2 (en) 2016-08-31 2023-01-24 Skyworks Solutions, Inc. Amplifying radio-frequency signals using variable impedance stages and bypass blocks
WO2019142526A1 (ja) * 2018-01-19 2019-07-25 ソニーセミコンダクタソリューションズ株式会社 増幅回路および受信回路
WO2022153926A1 (ja) * 2021-01-13 2022-07-21 株式会社村田製作所 高周波回路および通信装置

Also Published As

Publication number Publication date
EP4164123A3 (en) 2023-06-14
WO2014078333A2 (en) 2014-05-22
CN104798299A (zh) 2015-07-22
EP2920879A2 (en) 2015-09-23
WO2014078333A3 (en) 2014-07-17
EP4164123A2 (en) 2023-04-12
US20140134960A1 (en) 2014-05-15
EP2920879B1 (en) 2022-12-21
US9603187B2 (en) 2017-03-21
CN104798299B (zh) 2018-01-26
KR20150084908A (ko) 2015-07-22

Similar Documents

Publication Publication Date Title
CN104798299B (zh) 全频带放大器
US9166852B2 (en) Low noise amplifiers with transformer-based signal splitting for carrier aggregation
US9059665B2 (en) Amplifiers with multiple outputs and configurable degeneration inductor
US9837968B2 (en) Amplifier circuits
US9106185B2 (en) Amplifiers with inductive degeneration and configurable gain and input matching
US9154087B2 (en) Amplifiers with configurable mutually-coupled source degeneration inductors
US9331720B2 (en) Combined directional coupler and impedance matching circuit
US9124228B2 (en) Amplifiers with boosted or deboosted source degeneration inductance
US9548709B2 (en) Independent gain control for multiple receive circuits concurrently processing different transmitted signals

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161019

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161019

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20171027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171128

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180228

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180501

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181030

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190528