CN104798299B - 全频带放大器 - Google Patents

全频带放大器 Download PDF

Info

Publication number
CN104798299B
CN104798299B CN201380059119.XA CN201380059119A CN104798299B CN 104798299 B CN104798299 B CN 104798299B CN 201380059119 A CN201380059119 A CN 201380059119A CN 104798299 B CN104798299 B CN 104798299B
Authority
CN
China
Prior art keywords
frequency band
coupled
band group
transistor
gain transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380059119.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN104798299A (zh
Inventor
A·M·塔希奇
A·B·戴维瓦拉
C·纳拉斯隆
K·范扎临居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN104798299A publication Critical patent/CN104798299A/zh
Application granted granted Critical
Publication of CN104798299B publication Critical patent/CN104798299B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02—Terminal devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
CN201380059119.XA 2012-11-14 2013-11-12 全频带放大器 Active CN104798299B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/677,017 2012-11-14
US13/677,017 US9603187B2 (en) 2012-11-14 2012-11-14 Omni-band amplifiers
PCT/US2013/069752 WO2014078333A2 (en) 2012-11-14 2013-11-12 Omni-band amplifiers

Publications (2)

Publication Number Publication Date
CN104798299A CN104798299A (zh) 2015-07-22
CN104798299B true CN104798299B (zh) 2018-01-26

Family

ID=49725347

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380059119.XA Active CN104798299B (zh) 2012-11-14 2013-11-12 全频带放大器

Country Status (6)

Country Link
US (1) US9603187B2 (enExample)
EP (2) EP2920879B1 (enExample)
JP (1) JP2015534420A (enExample)
KR (1) KR20150084908A (enExample)
CN (1) CN104798299B (enExample)
WO (1) WO2014078333A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9473336B2 (en) * 2014-05-16 2016-10-18 Qualcomm Incorporated Radio frequency (RF) front end having multiple low noise amplifier modules
US9723560B2 (en) 2014-05-22 2017-08-01 Qualcomm Incorporated Multi-stage amplifier with RC network
US9479131B2 (en) 2014-05-23 2016-10-25 Qualcomm Incorporated Carrier aggregation amplifier with dual gain control
US9300264B2 (en) 2014-08-22 2016-03-29 Mediatek Inc. Receiver arrangement and method of performing operations of receiver
US9369097B2 (en) * 2014-09-05 2016-06-14 Qualcomm Incorporated Multi-band low noise amplifier
US20160079946A1 (en) * 2014-09-12 2016-03-17 Qualcomm Incorporated Multi-band low noise amplifier with a shared degeneration inductor
US9431963B2 (en) 2014-09-19 2016-08-30 Qualcomm Incorporated Dual stage low noise amplifier for multiband receiver
US10211861B2 (en) * 2015-03-17 2019-02-19 Skyworks Solutions, Inc. Multi-mode integrated front end module
US9608569B2 (en) 2015-04-01 2017-03-28 Qualcomm Incorporated Linearizing scheme for baseband filter with active feedback
US9712195B2 (en) 2015-05-13 2017-07-18 Qualcomm Incorporated Radio frequency low noise amplifier with on-chip matching and built-in tunable filter
CN106330099B (zh) * 2015-06-30 2019-03-26 展讯通信（上海）有限公司 一种射频前端电路
US9774303B1 (en) * 2015-08-25 2017-09-26 Marvell International Ltd. Low-noise amplifier for intra-band non contiguous carrier agregation
US10177722B2 (en) 2016-01-12 2019-01-08 Qualcomm Incorporated Carrier aggregation low-noise amplifier with tunable integrated power splitter
SG11201901799UA (en) * 2016-08-31 2019-03-28 Skyworks Solutions Inc Multi-input amplifier with degeneration switching block and low loss bypass function
JP2019530379A (ja) * 2016-08-31 2019-10-17 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 利得モードによる反射損失及び不整合が改善された増幅器
US9941849B1 (en) 2017-02-10 2018-04-10 Psemi Corporation Programmable optimized band switching LNA for operation in multiple narrow-band frequency ranges
US9800273B1 (en) 2017-03-01 2017-10-24 Qualcomm Incorporated Wideband high linearity LNA with intra-band carrier aggregation support
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
US10038418B1 (en) 2017-04-04 2018-07-31 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
EP3461004B1 (en) * 2017-09-20 2021-04-28 Nxp B.V. An amplifier and a wireless signal receiver comprising said amplifier
WO2019142526A1 (ja) * 2018-01-19 2019-07-25 ソニーセミコンダクタソリューションズ株式会社 増幅回路および受信回路
US10797738B2 (en) * 2018-10-26 2020-10-06 Analog Devices, Inc. Segmented receiver for wireless communications
CN110719074B (zh) * 2019-09-23 2023-06-20 航天科工微电子系统研究院有限公司 一种可调谐的宽带低噪声放大器
WO2022153926A1 (ja) * 2021-01-13 2022-07-21 株式会社村田製作所 高周波回路および通信装置
CN115459793A (zh) * 2021-06-08 2022-12-09 开元通信技术（厦门）有限公司 一种射频装置
US12191820B2 (en) * 2021-11-11 2025-01-07 Samsung Electronics Co., Ltd. Low noise amplifier and receiver
CN114553155B (zh) * 2022-04-22 2022-08-16 成都嘉纳海威科技有限责任公司 一种覆盖基频的超宽带射频放大器
KR102874038B1 (ko) * 2023-10-11 2025-10-20 충남대학교산학협력단 잡음 상쇄가 가능한 가변 이득 증폭기 및 그 동작 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015968A (en) * 1990-07-27 1991-05-14 Pacific Monolithics Feedback cascode amplifier
US7474158B1 (en) * 2006-04-10 2009-01-06 Rf Micro Devices, Inc. Dynamic match low noise amplifier with reduced current consumption in low gain mode
CN102356542A (zh) * 2009-03-19 2012-02-15 高通股份有限公司 具有保护电路的共源共栅放大器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3563321B2 (ja) * 2000-03-22 2004-09-08 日本電信電話株式会社 マルチバンド高周波増幅回路
US7023272B2 (en) 2004-04-19 2006-04-04 Texas Instruments Incorporated Multi-band low noise amplifier system
US7508260B2 (en) * 2005-08-24 2009-03-24 Freescale Semiconductor, Inc. Bypassable low noise amplifier topology with multi-tap transformer
KR100824783B1 (ko) * 2006-10-17 2008-04-24 삼성전자주식회사 다중 대역용 저잡음 증폭기 및 다중 대역용 무선 신호수신기
TWI327416B (en) 2006-10-27 2010-07-11 Nat Univ Tsing Hua Cascode low noise amplifier with a source coupled active inductor
KR20080072383A (ko) 2007-02-02 2008-08-06 삼성전자주식회사 실리콘 튜너 및 그 신호 처리 방법
JP2009010826A (ja) * 2007-06-29 2009-01-15 Sony Corp マルチバンド低雑音増幅器および無線通信装置
KR100952666B1 (ko) * 2008-02-01 2010-04-13 (주)에프씨아이 커패시터 피드백을 이용한 재구성 가능 저잡음 증폭기
JP5168495B2 (ja) * 2008-12-12 2013-03-21 ルネサスエレクトロニクス株式会社 電力増幅回路
WO2010082235A1 (ja) * 2009-01-13 2010-07-22 パナソニック株式会社 可変利得増幅器およびそれを備えた高周波信号受信装置
KR20110060735A (ko) * 2009-11-30 2011-06-08 한국전자통신연구원 고주파 변압기를 이용한 다중 대역 전력증폭기
WO2011088361A2 (en) * 2010-01-15 2011-07-21 Wispry, Inc. Tunable matching network circuit topology devices and methods
US8626084B2 (en) * 2010-05-13 2014-01-07 Qualcomm, Incorporated Area efficient concurrent matching transceiver
US8310314B2 (en) * 2010-09-06 2012-11-13 Mediatek Inc. Signal amplification circuits for receiving/transmitting signals according to input signal
KR101214761B1 (ko) * 2011-09-19 2013-01-09 삼성전기주식회사 다중대역 증폭기 및 다중대역 증폭방법
US8742853B2 (en) * 2011-10-25 2014-06-03 Marvell World Trade Ltd. Low-stress cascode structure
US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015968A (en) * 1990-07-27 1991-05-14 Pacific Monolithics Feedback cascode amplifier
US7474158B1 (en) * 2006-04-10 2009-01-06 Rf Micro Devices, Inc. Dynamic match low noise amplifier with reduced current consumption in low gain mode
CN102356542A (zh) * 2009-03-19 2012-02-15 高通股份有限公司 具有保护电路的共源共栅放大器

Also Published As

Publication number Publication date
EP4164123A3 (en) 2023-06-14
WO2014078333A2 (en) 2014-05-22
CN104798299A (zh) 2015-07-22
EP2920879A2 (en) 2015-09-23
WO2014078333A3 (en) 2014-07-17
EP4164123A2 (en) 2023-04-12
US20140134960A1 (en) 2014-05-15
JP2015534420A (ja) 2015-11-26
EP2920879B1 (en) 2022-12-21
US9603187B2 (en) 2017-03-21
KR20150084908A (ko) 2015-07-22

Similar Documents

Publication Publication Date Title
CN104798299B (zh) 全频带放大器
US9166852B2 (en) Low noise amplifiers with transformer-based signal splitting for carrier aggregation
KR101650846B1 (ko) 구성가능한 상호 커플링된 소스 디제너레이션 인덕터들을 갖는 증폭기들
CN105009448B (zh) 具有多个输出和可配置退化电感器的放大器
US9331720B2 (en) Combined directional coupler and impedance matching circuit
CN105075114B (zh) 具有改进的线性度的分路式放大器
US9837968B2 (en) Amplifier circuits
CN105009447B (zh) 具有电感衰退、可配置增益和输入匹配的放大器
US8149050B2 (en) Cascaded amplifiers with transformer-based bypass mode
US8847351B2 (en) Integrated power amplifier with load inductor located under IC die
CN105103442A (zh) 具有经助推或经制推的源极退化电感的放大器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant