JP6686016B2 - 帯域内キャリアアグリゲーションのための受信機フロントエンドアーキテクチャ - Google Patents

帯域内キャリアアグリゲーションのための受信機フロントエンドアーキテクチャ Download PDF

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JP6686016B2
JP6686016B2 JP2017525591A JP2017525591A JP6686016B2 JP 6686016 B2 JP6686016 B2 JP 6686016B2 JP 2017525591 A JP2017525591 A JP 2017525591A JP 2017525591 A JP2017525591 A JP 2017525591A JP 6686016 B2 JP6686016 B2 JP 6686016B2
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signal
transistor
control signal
terminal
load
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Japanese (ja)
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JP2018501695A5 (enExample
JP2018501695A (ja
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ラジェンドラン、ジリーシュ
サホタ、ガーカンワル・シン
クマー、ラケシュ
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/0002—Modulated-carrier systems analog front ends; means for connecting modulators, demodulators or transceivers to a transmission line
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/003—Arrangements for allocating sub-channels of the transmission path
    • H04L5/0042—Intra-user or intra-terminal allocation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/0001—Arrangements for dividing the transmission path
    • H04L5/0003—Two-dimensional division
    • H04L5/0005—Time-frequency
    • H04L5/0007—Time-frequency the frequencies being orthogonal, e.g. OFDM(A) or DMT
    • H04L5/001—Time-frequency the frequencies being orthogonal, e.g. OFDM(A) or DMT the frequencies being arranged in component carriers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
JP2017525591A 2014-11-13 2015-09-30 帯域内キャリアアグリゲーションのための受信機フロントエンドアーキテクチャ Active JP6686016B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/540,900 2014-11-13
US14/540,900 US9385901B2 (en) 2014-11-13 2014-11-13 Receiver front end architecture for intra band carrier aggregation
PCT/US2015/053286 WO2016076962A1 (en) 2014-11-13 2015-09-30 Receiver front end architecture for intra band carrier aggregation

Publications (3)

Publication Number Publication Date
JP2018501695A JP2018501695A (ja) 2018-01-18
JP2018501695A5 JP2018501695A5 (enExample) 2018-10-18
JP6686016B2 true JP6686016B2 (ja) 2020-04-22

Family

ID=54337378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017525591A Active JP6686016B2 (ja) 2014-11-13 2015-09-30 帯域内キャリアアグリゲーションのための受信機フロントエンドアーキテクチャ

Country Status (5)

Country Link
US (1) US9385901B2 (enExample)
EP (1) EP3219016B1 (enExample)
JP (1) JP6686016B2 (enExample)
CN (2) CN107112957B (enExample)
WO (1) WO2016076962A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10381991B1 (en) 2018-02-02 2019-08-13 Psemi Corporation Drain sharing split LNA
US11159191B1 (en) 2020-09-11 2021-10-26 Apple Inc. Wireless amplifier circuitry for carrier aggregation
US11683062B2 (en) * 2021-08-17 2023-06-20 Qualcomm Incorporated Reconfigurable amplifier
US11539382B1 (en) 2021-10-19 2022-12-27 Psemi Corporation Supporting wideband inputs on RF receivers
US20250211281A1 (en) * 2023-12-21 2025-06-26 Texas Instruments Incorporated Integrated receiver transmitter switch

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9928355D0 (en) 1999-12-01 2000-01-26 Koninkl Philips Electronics Nv Amplifier
US6636119B2 (en) * 2000-12-21 2003-10-21 Koninklijke Philips Electronics N.V. Compact cascode radio frequency CMOS power amplifier
US6725030B2 (en) * 2000-12-28 2004-04-20 Koninklijke Philips Electronics N.V. CMOS radio frequency amplifier with inverter driver
DE10344878B4 (de) 2003-09-26 2014-05-28 Infineon Technologies Ag Differenzverstärkeranordnung mit Stromregelkreis und Verfahren zum Betreiben einer Differenzverstärkeranordnung
US7902925B2 (en) * 2005-08-02 2011-03-08 Qualcomm, Incorporated Amplifier with active post-distortion linearization
US7889007B2 (en) 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
US7420425B2 (en) * 2006-09-28 2008-09-02 Via Technologies, Inc. Power amplifier and method thereof
WO2008102788A1 (ja) * 2007-02-20 2008-08-28 Nagoya Industrial Science Research Institute プログラマブル低雑音増幅装置
US7701289B2 (en) 2007-10-24 2010-04-20 Industrial Technology Research Institute Variable gain amplifier including series-coupled cascode amplifiers
US7696828B2 (en) * 2008-01-04 2010-04-13 Qualcomm, Incorporated Multi-linearity mode LNA having a deboost current path
US7656229B2 (en) * 2008-01-28 2010-02-02 Qualcomm, Incorporated Method and apparatus for reducing intermodulation distortion in an electronic device having an amplifier circuit
US7936220B2 (en) 2008-12-12 2011-05-03 Qualcomm, Incorporated Techniques for improving amplifier linearity
US8031005B2 (en) 2009-03-23 2011-10-04 Qualcomm, Incorporated Amplifier supporting multiple gain modes
TWI472149B (zh) * 2010-03-02 2015-02-01 Marvell World Trade Ltd 雙載波放大器電路和方法
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
EP2590351A3 (en) * 2011-11-04 2013-05-22 ST-Ericsson SA Non-contiguous carrier aggregation
US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US8913976B2 (en) * 2012-10-23 2014-12-16 Qualcomm Incorporated Amplifiers with shunt switches
US8975968B2 (en) * 2013-01-25 2015-03-10 Qualcomm Incorporated Amplifiers with improved isolation
US9106185B2 (en) * 2013-03-11 2015-08-11 Qualcomm Incorporated Amplifiers with inductive degeneration and configurable gain and input matching

Also Published As

Publication number Publication date
CN107112957A (zh) 2017-08-29
US9385901B2 (en) 2016-07-05
EP3219016B1 (en) 2019-07-10
CN113644881A (zh) 2021-11-12
CN107112957B (zh) 2021-08-20
WO2016076962A1 (en) 2016-05-19
EP3219016A1 (en) 2017-09-20
JP2018501695A (ja) 2018-01-18
US20160142231A1 (en) 2016-05-19

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