JP6492965B2 - パワートランジスタ駆動装置 - Google Patents
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- 238000012544 monitoring process Methods 0.000 claims description 32
- 238000001514 detection method Methods 0.000 claims description 26
- 230000005669 field effect Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Description
電界効果型トランジスタ(30)と、
電界効果型トランジスタに対して、並列接続された絶縁ゲート型バイポーラトランジスタ(20)と、
絶縁ゲート型バイポーラトランジスタをオンするため、絶縁ゲート型バイポーラトランジスタのゲートに印加する電圧を発生する第1駆動回路(11)と、
電界効果型トランジスタのゲートに印加するゲート電圧を調整して、電界効果型トランジスタをオン、またはオフする第2駆動回路(13)と、
第1駆動回路が電圧を発生したときに、絶縁ゲート型バイポーラトランジスタがオンしたか否かを検出する検出回路(12)と、を備え、
第2駆動回路は、検出回路が、絶縁ゲート型バイポーラトランジスタがオンしたことを検出したことを条件として、電界効果型トランジスタをオンするためのゲート電圧を発生することを特徴とする。
まず、図1〜図3を参照して、第1実施形態に係るパワートランジスタ駆動装置1について説明する。本実施形態では、図1に示すように、パワートランジスタとして、絶縁ゲート型バイポーラトランジスタ(以下、IGBT)20と、このIGBT20に対して並列に接続した電界効果型トランジスタ(以下、FET)30とを有している。すなわち、IGBT20のエミッタとFET30のソースとが接続され、IGBT20のコレクタとFET30のドレインとが、それぞれ接続されている。なお、FET30として、例えばMOSFET、JFET、HEMTなどを用いることができる。
次に、第2実施形態に係るパワートランジスタ駆動装置1について説明する。
次に、第3実施形態に係るパワートランジスタ駆動装置1について説明する。図4は、本実施形態のパワートランジスタ駆動装置1の構成を示している。
次に、第4実施形態に係るパワートランジスタ駆動装置1について説明する。
次に、第5実施形態に係るパワートランジスタ駆動装置1について説明する。
11 IGBTゲート駆動回路
12 IGBTゲート電圧監視回路
13 FETゲート駆動回路
20 絶縁ゲート型バイポーラトランジスタ(IGBT)
30 電界効果型トランジスタ(FET)
Claims (10)
- 電界効果型トランジスタ(30)と、
前記電界効果型トランジスタに対して、並列接続された絶縁ゲート型バイポーラトランジスタ(20)と、
前記絶縁ゲート型バイポーラトランジスタをオンするため、前記絶縁ゲート型バイポーラトランジスタのゲートに印加する電圧を発生する第1駆動回路(11)と、
前記電界効果型トランジスタのゲートに印加するゲート電圧を調整して、前記電界効果型トランジスタをオン、またはオフする第2駆動回路(13)と、
前記第1駆動回路が電圧を発生したときに、前記絶縁ゲート型バイポーラトランジスタがオンしたか否かを検出する検出回路(12、15)と、を備え、
前記第2駆動回路は、前記検出回路が、前記絶縁ゲート型バイポーラトランジスタがオンしたことを検出したことを条件として、前記電界効果型トランジスタをオンするためのゲート電圧を発生することを特徴とするパワートランジスタ駆動装置。 - 前記検出回路は、前記絶縁ゲート型バイポーラトランジスタのゲートに印加される電圧を監視する電圧監視回路(12)であり、前記電圧監視回路は、所定電圧以上の電圧がゲートに印加されたとき、前記絶縁ゲート型バイポーラトランジスタがオンしたことを検出することを特徴とする請求項1に記載のパワートランジスタ駆動装置。
- 前記所定電圧は、前記絶縁ゲート型バイポーラトランジスタの状態が飽和領域に移行した後に、ゲート電圧として達する値に設定されることを特徴とする請求項2に記載のパワートランジスタ駆動装置。
- 前記絶縁ゲート型バイポーラトランジスタの温度を検出する温度検出手段を備え、
前記電圧監視回路は、前記温度検出手段によって検出された温度に基づき、前記絶縁ゲート型バイポーラトランジスタの温度特性を考慮して、前記所定電圧を変化させることを特徴とする請求項2又は3に記載のパワートランジスタ駆動装置。 - 前記検出回路は、前記絶縁ゲート型バイポーラトランジスタを流れる電流を監視する電流監視回路(15)であり、前記電流監視回路は、前記絶縁ゲート型バイポーラトランジスタに所定電流以上の電流が流れたことを検出したことに応じて、前記絶縁ゲート型バイポーラトランジスタがオンしたことを検出することを特徴とする請求項1に記載のパワートランジスタ駆動装置。
- 前記第2駆動回路は、前記絶縁ゲート型バイポーラトランジスタに所定電流以上の電流が流れたことが検出されてから、所定の遅れ時間経過後に、前記電界効果型トランジスタをオンするためのゲート電圧を発生することを特徴とする請求項5に記載のパワートランジスタ駆動装置。
- 前記電界効果型トランジスタは、ワイドバンドギャップ半導体を用いて形成されることを特徴とする請求項1乃至6のいずれか1項に記載のパワートランジスタ駆動装置。
- 前記絶縁ゲート型バイポーラトランジスタを流れる電流に基づいて、過電流検出を行う過電流検出回路(14)を設け、
前記過電流検出回路によって過電流が検出されると、前記第1駆動回路は前記絶縁ゲート型バイポーラトランジスタをオフさせることを特徴とする請求項1乃至7のいずれか1項に記載のパワートランジスタ駆動装置。 - 前記過電流検出回路によって過電流が検出されたことに基づいて、前記第2駆動回路は前記電界効果型トランジスタをオフさせることを特徴とする請求項8に記載のパワートランジスタ駆動装置。
- 前記第1駆動回路、前記第2駆動回路、及び、前記検出回路は、同じチップ内に集積化して形成され、
前記チップ、前記電界効果型トランジスタ、及び、前記絶縁ゲート型バイポーラトランジスタが同一の基板(40)に実装されることを特徴とする請求項1乃至9のいずれか1項に記載のパワートランジスタ駆動装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2015104623A JP6492965B2 (ja) | 2015-05-22 | 2015-05-22 | パワートランジスタ駆動装置 |
US15/570,399 US10348294B2 (en) | 2015-05-22 | 2016-05-12 | Power transistor driving apparatus |
PCT/JP2016/002331 WO2016189817A1 (ja) | 2015-05-22 | 2016-05-12 | パワートランジスタ駆動装置 |
CN201680028970.XA CN107615664B (zh) | 2015-05-22 | 2016-05-12 | 功率晶体管驱动装置 |
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JP2015104623A JP6492965B2 (ja) | 2015-05-22 | 2015-05-22 | パワートランジスタ駆動装置 |
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JP6492965B2 true JP6492965B2 (ja) | 2019-04-03 |
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JP6623556B2 (ja) | 2015-05-27 | 2019-12-25 | 株式会社デンソー | 半導体装置 |
DE102017105712A1 (de) * | 2017-03-16 | 2018-10-04 | Infineon Technologies Austria Ag | Transistorbauelement |
JP6731885B2 (ja) * | 2017-06-20 | 2020-07-29 | 三菱電機株式会社 | 半導体装置 |
JP6930361B2 (ja) * | 2017-10-20 | 2021-09-01 | 株式会社デンソー | スイッチの駆動回路 |
JP7087869B2 (ja) * | 2018-09-18 | 2022-06-21 | 株式会社デンソー | 電力変換装置 |
JP7183797B2 (ja) * | 2019-01-08 | 2022-12-06 | 株式会社デンソー | 電力変換装置 |
JP7052757B2 (ja) * | 2019-03-01 | 2022-04-12 | 株式会社デンソー | スイッチの駆動装置 |
JP7088115B2 (ja) * | 2019-04-02 | 2022-06-21 | 株式会社デンソー | スイッチの駆動回路 |
JP7196750B2 (ja) * | 2019-04-16 | 2022-12-27 | 富士電機株式会社 | 電力変換装置 |
JP7146688B2 (ja) * | 2019-04-23 | 2022-10-04 | ルネサスエレクトロニクス株式会社 | 駆動装置、及び、電力供給システム |
DE102020102560A1 (de) | 2020-02-03 | 2021-08-05 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Verfahren zum Betrieb eines Wechselrichters, Wechselrichter, Antriebsstrang, Kraftfahrzeug, Verfahren zum Betrieb eines Kraftfahrzeugs |
US10972088B1 (en) * | 2020-09-01 | 2021-04-06 | Infineon Technologies Ag | Temperature detection of a power switch based on paired measurements of current and voltage |
US11378614B2 (en) | 2020-09-01 | 2022-07-05 | Infineon Technologies Ag | Temperature detection of power switch using modulation of driver output impedance |
DE102020123149A1 (de) | 2020-09-04 | 2022-03-10 | Infineon Technologies Ag | Ansteuerschaltung für elektronischen schalter |
JP6995175B1 (ja) * | 2020-09-07 | 2022-01-14 | 三菱電機株式会社 | スイッチング装置および電力変換装置 |
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WO2011096232A1 (ja) * | 2010-02-05 | 2011-08-11 | パナソニック株式会社 | 電力変換装置 |
US20120235710A1 (en) * | 2011-03-15 | 2012-09-20 | Infineon Technologies Ag | Circuit Arrangement with a MOSFET and an IGBT |
WO2012153459A1 (ja) * | 2011-05-11 | 2012-11-15 | 富士電機株式会社 | 絶縁ゲート型スイッチング素子の駆動回路 |
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US9030054B2 (en) * | 2012-03-27 | 2015-05-12 | Raytheon Company | Adaptive gate drive control method and circuit for composite power switch |
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