JP6481994B2 - 画素電極のパターン形成方法および形成システム - Google Patents
画素電極のパターン形成方法および形成システム Download PDFInfo
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- JP6481994B2 JP6481994B2 JP2014216489A JP2014216489A JP6481994B2 JP 6481994 B2 JP6481994 B2 JP 6481994B2 JP 2014216489 A JP2014216489 A JP 2014216489A JP 2014216489 A JP2014216489 A JP 2014216489A JP 6481994 B2 JP6481994 B2 JP 6481994B2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Description
したがって、前記第1のスペース部、第2のスペース部の画素電極層を除去することによって、従来よりも狭ピッチで画素電極を基板上に形成することができる。
2、4、5 レジスト
3 犠牲膜
3a、3b 残置犠牲膜
7 ライン電極
8 コンタクト部の電極
100 パターン形成システム
110 フォトリソ装置
111 搬入出部
112 塗布系処理部
113 露光処理部
114 現像系処理部
120 犠牲膜形成装置
130 犠牲膜除去装置
140 レジスト除去装置
150 エッチング装置
160 制御装置
G ガラス基板
S1 第1のスペース部
S2 第2のスペース部
Claims (4)
- 基板上に画素電極のパターンを形成する方法であって、
基板上の画素電極層の上面に、コンタクト部のレジスト、及び前記パターンの第1のスペース部となる部分にレジストを形成し、その際、前記コンタクト部のレジストの高さは、第1のスペース部のレジストよりも高く形成し、
その後各レジストが形成された画素電極層上に犠牲膜を形成し、
その後前記各レジストの側部の残置犠牲膜を残して、前記犠牲膜を除去し、画素電極層の上面に前記パターンの第2のスペース部を形成し、
その後コンタクト部のレジストを残しつつ、第1のスペース部のレジストを除去して前記パターンの第1のスペース部を形成し、
その後前記第1のスペース部、第2のスペース部の画素電極層を除去することを特徴とする、画素電極のパターンの形成方法。 - 請求項1に記載のパターン形成方法を基板処理システムによって実行させるように、当該基板処理システムを制御する制御部のコンピュータ上で動作するプログラム。
- 請求項2に記載のプログラムを格納した読み取り可能なコンピュータ記憶媒体。
- 請求項1に記載の画素電極のパターンの形成方法を実施するための基板処理システムであって、
基板上にレジスト膜を形成するレジスト膜形成装置と、
前記レジスト膜形成装置で形成されたレジスト膜を露光する露光装置と、
前記露光装置で露光されたレジスト膜を現像して、基板上にレジストパターンを形成する現像装置と、
前記犠牲膜を除去する犠牲膜除去装置と、
前記第1のスペース部、第2のスペース部の画素電極層を除去する、画素電極層除去装置と、
を有することを特徴とする、パターン形成システム。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014216489A JP6481994B2 (ja) | 2014-10-23 | 2014-10-23 | 画素電極のパターン形成方法および形成システム |
TW104133510A TWI618963B (zh) | 2014-10-23 | 2015-10-13 | 畫素電極之圖案形成方法及形成系統 |
CN201510697063.1A CN105549277B (zh) | 2014-10-23 | 2015-10-23 | 像素电极的图案形成方法和形成系统 |
KR1020150148085A KR102307416B1 (ko) | 2014-10-23 | 2015-10-23 | 화소 전극의 패턴 형성 방법 및 형성 시스템 |
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JP2014216489A JP6481994B2 (ja) | 2014-10-23 | 2014-10-23 | 画素電極のパターン形成方法および形成システム |
Publications (3)
Publication Number | Publication Date |
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JP2016085287A JP2016085287A (ja) | 2016-05-19 |
JP2016085287A5 JP2016085287A5 (ja) | 2017-07-20 |
JP6481994B2 true JP6481994B2 (ja) | 2019-03-13 |
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JP2014216489A Active JP6481994B2 (ja) | 2014-10-23 | 2014-10-23 | 画素電極のパターン形成方法および形成システム |
Country Status (4)
Country | Link |
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JP (1) | JP6481994B2 (ja) |
KR (1) | KR102307416B1 (ja) |
CN (1) | CN105549277B (ja) |
TW (1) | TWI618963B (ja) |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11264993A (ja) * | 1998-03-18 | 1999-09-28 | Toshiba Corp | 液晶表示装置および液晶表示装置の製造方法 |
JP4096933B2 (ja) * | 2004-09-30 | 2008-06-04 | セイコーエプソン株式会社 | パターンの形成方法 |
KR20070093098A (ko) * | 2005-01-11 | 2007-09-17 | 이데미쓰 고산 가부시키가이샤 | 투명 전극 및 그의 제조 방법 |
US7579220B2 (en) * | 2005-05-20 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device manufacturing method |
KR101167312B1 (ko) * | 2005-06-30 | 2012-07-19 | 엘지디스플레이 주식회사 | 미세 패턴 형성 방법과 그를 이용한 액정 표시 장치 및 그제조 방법 |
TW200913013A (en) * | 2007-07-30 | 2009-03-16 | Hoya Corp | Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern |
US8440569B2 (en) * | 2007-12-07 | 2013-05-14 | Cadence Design Systems, Inc. | Method of eliminating a lithography operation |
JP5315689B2 (ja) * | 2007-12-28 | 2013-10-16 | 東京エレクトロン株式会社 | パターン形成方法、半導体製造装置及び記憶媒体 |
JP4719910B2 (ja) * | 2008-11-26 | 2011-07-06 | 国立大学法人東北大学 | 半導体装置の製造方法 |
KR101586263B1 (ko) * | 2009-09-11 | 2016-01-18 | 니혼샤신 인사츠 가부시키가이샤 | 협액자 터치 입력 시트와 그 제조 방법 |
JP5391055B2 (ja) * | 2009-12-25 | 2014-01-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び半導体装置の製造システム |
JP2012008546A (ja) * | 2010-05-24 | 2012-01-12 | Hoya Corp | 多階調フォトマスクの製造方法、及びパターン転写方法 |
FR2960657B1 (fr) * | 2010-06-01 | 2013-02-22 | Commissariat Energie Atomique | Procede de lithographie a dedoublement de pas |
KR101692407B1 (ko) * | 2010-08-19 | 2017-01-04 | 삼성전자주식회사 | 라인 패턴 구조물의 형성 방법 |
KR20120133181A (ko) * | 2011-05-30 | 2012-12-10 | 엘지디스플레이 주식회사 | 액정표시장치 어레이 기판의 제조 방법 |
JP5458059B2 (ja) | 2011-06-02 | 2014-04-02 | 株式会社ジャパンディスプレイ | 液晶パネル及び電子機器 |
CN103311109B (zh) * | 2012-03-12 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 侧墙的形成方法和用侧墙定义图形结构的方法 |
TWI488238B (zh) * | 2012-03-29 | 2015-06-11 | Powerchip Technology Corp | 一種半導體線路製程 |
CN104471472B (zh) | 2012-07-04 | 2017-03-15 | Nlt科技股份有限公司 | 液晶显示装置 |
CN102945854B (zh) * | 2012-11-13 | 2015-05-13 | 京东方科技集团股份有限公司 | 阵列基板及阵列基板上扇出导线的制作方法、显示装置 |
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- 2015-10-13 TW TW104133510A patent/TWI618963B/zh active
- 2015-10-23 CN CN201510697063.1A patent/CN105549277B/zh active Active
- 2015-10-23 KR KR1020150148085A patent/KR102307416B1/ko active IP Right Grant
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Publication number | Publication date |
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JP2016085287A (ja) | 2016-05-19 |
KR102307416B1 (ko) | 2021-09-29 |
CN105549277A (zh) | 2016-05-04 |
KR20160048013A (ko) | 2016-05-03 |
TWI618963B (zh) | 2018-03-21 |
CN105549277B (zh) | 2019-12-17 |
TW201629604A (zh) | 2016-08-16 |
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