JP2013148711A - 液晶表示装置およびその製造方法 - Google Patents
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Abstract
壁電極方式の液晶表示装置において、壁構造と電極の平面分布を最適化し、歩留まりを向上する。
【解決手段】
マトリクス状に複数の画素が配置され、各画素は、画素境界に形成された絶縁体の壁構造10と、前記画素境界の壁構造の側面に形成した壁電極、および当該壁電極と連続し、壁電極が基板に接する位置から平面方向に伸びる平面電極から成るソース電極11と、画素の両側のソース電極11間に設けられ、絶縁層を介して前記平面電極と一部が重畳することにより保持容量を形成する第一のコモン電極12と、前記画素の両側の壁電極間に設けられた第二のコモン電極13とを有する液晶表示装置において、隣接する二つの画素の壁電極の境界となるスリットを前記壁構造の頂部にのみ配置する。
【選択図】図1
Description
そして、TFT側基板とCF側基板とが貼り合わせられ、両基板間に液晶分子29を含む液晶層28が封入される。
11 ソース電極
12 第一のコモン電極
13 第二のコモン電極
14 第三のコモン電極
15 信号配線
16 ゲート配線
17 ポリシリコン層
18 第一のコンタクトホール
19 第二のコンタクトホール
20 第一の基板
21 第一の絶縁層
22 第二の絶縁層
23 第三の絶縁層
24 第一の配向膜
25 第一の偏光板
26 スリット
28 液晶層
29 液晶分子
30 第二の基板
31 ブラックマトリクスBM
32 カラーフィルタCF
33 オーバーコート層
34 第二の配向膜
35 第二の偏光板
36 等電位面
41 レジスト
43 オーバーエッチ部
44 アンダーエッチ部
101 基板
102 基板
103 信号線
104 走査線
105 コモン線
106 画素
107 信号駆動回路
108 走査駆動回路
109 コモン電圧発生回路
110 TFT素子
Claims (13)
- マトリクス状に複数の画素が配置され、各画素は、画素境界に形成された絶縁体の壁構造と、前記画素境界の壁構造の側面に形成した壁電極、および当該壁電極と連続し、壁電極が基板に接する位置から平面方向に伸びる平面電極から成るソース電極と、画素の両側のソース電極間に設けられ、絶縁層を介して前記平面電極と一部が重畳することにより保持容量を形成する第一のコモン電極と、前記画素の両側の壁電極間に設けられた第二のコモン電極とを有する液晶表示装置において、
隣接する二つの画素の壁電極の境界となるスリットを前記壁構造の頂部に選択的に配置したことを特徴とする液晶表示装置。 - 請求項1に記載の液晶表示装置において、
前記壁電極は、前記画素境界の壁構造の上面まで形成されていることを特徴とする液晶表示装置。 - 請求項1に記載の液晶表示装置において、
前記壁電極は、前記画素境界の壁構造の側面のみに形成されていることを特徴とする液晶表示装置。 - 請求項1〜3の何れか一つに記載の液晶表示装置において、
前記壁構造は、画素の長手方向の端部で寸断されており、前記ソース電極の壁電極は、前記壁構造の端部より内側に形成されていることを特徴とする液晶表示装置。 - 請求項1〜3の何れか一つに記載の液晶表示装置において、
前記壁構造は、画素の長手方向の端部で連続していることを特徴とする液晶表示装置。 - 請求項1〜5の何れか一つに記載の液晶表示装置において、
カラーフィルタ側基板上であって、前記画素の両側のソース電極間に、第三のコモン電極を備えることを特徴とする液晶表示装置。 - 請求項1〜6の何れか一つに記載の液晶表示装置において、
前記画素はV字型の形状で、前記液晶配向方向は前記画素内で一定であり、前記画素内の一方と他方とで前記壁構造の伸張方向が前記液晶配向方向となす角は等しく、前記画素内の一方と他方とで前記壁構造の伸張方向が前記液晶方向に対して互いに反対方向に傾いていることを特徴とする液晶表示装置。 - マトリクス状に複数の画素が配置され、各画素は、画素境界に形成された絶縁体の壁構造と、前記画素境界の壁構造の側面から上面にかけて形成した壁電極、および当該壁電極と連続し、壁電極が基板に接する位置から平面方向に伸びる平面電極から成るソース電極と、画素の両側のソース電極間に設けられ、絶縁層を介して前記平面電極と一部が重畳することにより保持容量を形成する第一のコモン電極と、前記画素の両側の壁電極間に設けられた第二のコモン電極とを有する液晶表示装置の製造方法であって、
前記壁構造上であって、TFT側の基板上の全面に、透明電極を形成するステップと、
前記透明電極上にレジストを塗布するステップと、
前記壁構造の頂部に隣接する二つの画素の壁電極の境界となるスリットを配置するようなマスクを用いて、前記レジストを露光し、前記壁構造上の透明電極を露出するステップと、
前記露出した壁構造上の透明電極を除去することにより、前記壁構造の頂部に隣接する二つの画素の壁電極の境界となるスリットを配置する壁電極を形成するステップと
を含むことを特徴とする液晶表示装置の製造方法。 - 請求項8に記載の液晶表示装置において、
前記壁構造は、画素の長手方向の端部で寸断されており、前記ソース電極の壁電極は、前記壁構造の端部より内側に形成されていることを特徴とする液晶表示装置。 - 請求項8に記載の液晶表示装置において、
前記壁構造は、画素の長手方向の端部で連続していることを特徴とする液晶表示装置。 - マトリクス状に複数の画素が配置され、各画素は、画素境界に形成された絶縁体の壁構造と、前記画素境界の壁構造の側面に形成した壁電極、および当該壁電極と連続し、壁電極が基板に接する位置から平面方向に伸びる平面電極から成るソース電極と、画素の両側のソース電極間に設けられ、絶縁層を介して前記平面電極と一部が重畳することにより保持容量を形成する第一のコモン電極と、前記画素の両側の壁電極間に設けられた第二のコモン電極とを有する液晶表示装置の製造方法であって、
前記壁構造上であって、TFT側の基板上の全面に、透明電極を形成するステップと、
前記透明電極上にレジストを塗布するステップと、
前記レジストをアッシングすることにより、前記壁構造上の透明電極を露出するステップと、
前記露出した壁構造上の透明電極を除去することにより、前記壁構造の側面に壁電極を形成するステップと
を含むことを特徴とする液晶表示装置の製造方法。 - 請求項11に記載の液晶表示装置において、
前記壁構造は、画素の長手方向の端部で寸断されており、前記ソース電極の壁電極は、前記壁構造の端部より内側に形成されていることを特徴とする液晶表示装置。 - 請求項11に記載の液晶表示装置において、
前記壁構造は、画素の長手方向の端部で連続していることを特徴とする液晶表示装置。
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JP2012008974A JP5865088B2 (ja) | 2012-01-19 | 2012-01-19 | 液晶表示装置およびその製造方法 |
US13/739,477 US9366919B2 (en) | 2012-01-19 | 2013-01-11 | Liquid crystal display device and method for manufacturing the same |
CN201310028150.9A CN103217838B (zh) | 2012-01-19 | 2013-01-17 | 液晶显示装置及其制造方法 |
US15/157,606 US10310339B2 (en) | 2012-01-19 | 2016-05-18 | Liquid crystal display device and method for manufacturing the same |
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JP2015036713A (ja) * | 2013-08-12 | 2015-02-23 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
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JP5865088B2 (ja) * | 2012-01-19 | 2016-02-17 | 株式会社ジャパンディスプレイ | 液晶表示装置およびその製造方法 |
JP5891952B2 (ja) * | 2012-05-29 | 2016-03-23 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
KR20150119574A (ko) * | 2014-04-15 | 2015-10-26 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20150136685A (ko) * | 2014-05-27 | 2015-12-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
TWI595287B (zh) * | 2014-12-22 | 2017-08-11 | 群創光電股份有限公司 | 顯示面板 |
KR101959488B1 (ko) * | 2015-09-08 | 2019-03-18 | 주식회사 엘지화학 | 광학 소자의 제조 방법 |
CN108732805B (zh) * | 2018-05-28 | 2021-09-14 | 京东方科技集团股份有限公司 | 一种显示基板、显示面板及显示装置 |
FR3086100B1 (fr) * | 2018-09-13 | 2022-08-12 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes |
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JP2004341465A (ja) * | 2003-05-14 | 2004-12-02 | Obayashi Seiko Kk | 高品質液晶表示装置とその製造方法 |
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US20130188117A1 (en) | 2013-07-25 |
US20160291428A1 (en) | 2016-10-06 |
US10310339B2 (en) | 2019-06-04 |
CN103217838A (zh) | 2013-07-24 |
CN103217838B (zh) | 2016-07-13 |
US9366919B2 (en) | 2016-06-14 |
JP5865088B2 (ja) | 2016-02-17 |
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