JP6480244B2 - 気相成長方法 - Google Patents

気相成長方法 Download PDF

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Publication number
JP6480244B2
JP6480244B2 JP2015081146A JP2015081146A JP6480244B2 JP 6480244 B2 JP6480244 B2 JP 6480244B2 JP 2015081146 A JP2015081146 A JP 2015081146A JP 2015081146 A JP2015081146 A JP 2015081146A JP 6480244 B2 JP6480244 B2 JP 6480244B2
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JP
Japan
Prior art keywords
nitride film
gallium nitride
aluminum
film
gallium
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JP2015081146A
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English (en)
Japanese (ja)
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JP2016199436A (ja
Inventor
英志 高橋
英志 高橋
佐藤　裕輔
裕輔 佐藤
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2015081146A priority Critical patent/JP6480244B2/ja
Priority to TW105109146A priority patent/TWI579395B/zh
Priority to KR1020160042101A priority patent/KR20160121424A/ko
Priority to CN201610218148.1A priority patent/CN106057658B/zh
Publication of JP2016199436A publication Critical patent/JP2016199436A/ja
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Publication of JP6480244B2 publication Critical patent/JP6480244B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0503—13th Group
    • H01L2924/05032—AlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10323—Aluminium nitride [AlN]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2015081146A 2015-04-10 2015-04-10 気相成長方法 Active JP6480244B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015081146A JP6480244B2 (ja) 2015-04-10 2015-04-10 気相成長方法
TW105109146A TWI579395B (zh) 2015-04-10 2016-03-24 Gas growth method
KR1020160042101A KR20160121424A (ko) 2015-04-10 2016-04-06 기상 성장 방법
CN201610218148.1A CN106057658B (zh) 2015-04-10 2016-04-08 气相生长方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015081146A JP6480244B2 (ja) 2015-04-10 2015-04-10 気相成長方法

Publications (2)

Publication Number Publication Date
JP2016199436A JP2016199436A (ja) 2016-12-01
JP6480244B2 true JP6480244B2 (ja) 2019-03-06

Family

ID=57250867

Family Applications (1)

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JP2015081146A Active JP6480244B2 (ja) 2015-04-10 2015-04-10 気相成長方法

Country Status (4)

Country Link
JP (1) JP6480244B2 (zh)
KR (1) KR20160121424A (zh)
CN (1) CN106057658B (zh)
TW (1) TWI579395B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388518B2 (en) 2017-03-31 2019-08-20 Globalwafers Co., Ltd. Epitaxial substrate and method of manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277441A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 半導体構造とそれを備えた半導体素子及び結晶成長方法
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP3956637B2 (ja) * 2001-04-12 2007-08-08 ソニー株式会社 窒化物半導体の結晶成長方法及び半導体素子の形成方法
JP2004363500A (ja) * 2003-06-06 2004-12-24 Satoru Tanaka 窒化物系化合物半導体の製造方法および窒化物系化合物半導体
KR100674829B1 (ko) * 2004-10-29 2007-01-25 삼성전기주식회사 질화물계 반도체 장치 및 그 제조 방법
KR101220826B1 (ko) * 2005-11-22 2013-01-10 삼성코닝정밀소재 주식회사 질화갈륨 단결정 후막의 제조방법
JP5383974B2 (ja) * 2006-12-27 2014-01-08 住友電工デバイス・イノベーション株式会社 半導体基板および半導体装置
GB2485418B (en) * 2010-11-15 2014-10-01 Dandan Zhu Semiconductor materials
US20130026480A1 (en) * 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
KR20130081956A (ko) * 2012-01-10 2013-07-18 삼성전자주식회사 질화물 반도체층 성장 방법
US20140158976A1 (en) * 2012-12-06 2014-06-12 Sansaptak DASGUPTA Iii-n semiconductor-on-silicon structures and techniques
CN103165771B (zh) * 2013-03-28 2015-07-15 天津三安光电有限公司 一种具有埋入式孔洞结构的氮化物底层及其制备方法
JP6270536B2 (ja) * 2013-06-27 2018-01-31 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法
CN104037284B (zh) * 2014-06-10 2016-11-02 广州市众拓光电科技有限公司 一种生长在Si衬底上的GaN薄膜及其制备方法

Also Published As

Publication number Publication date
TWI579395B (zh) 2017-04-21
JP2016199436A (ja) 2016-12-01
CN106057658A (zh) 2016-10-26
TW201638372A (zh) 2016-11-01
KR20160121424A (ko) 2016-10-19
CN106057658B (zh) 2019-09-06

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