JP6475719B2 - チタン酸ビスマスナトリウム(bst)系の無鉛圧電セラミック材料 - Google Patents
チタン酸ビスマスナトリウム(bst)系の無鉛圧電セラミック材料 Download PDFInfo
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- JP6475719B2 JP6475719B2 JP2016532275A JP2016532275A JP6475719B2 JP 6475719 B2 JP6475719 B2 JP 6475719B2 JP 2016532275 A JP2016532275 A JP 2016532275A JP 2016532275 A JP2016532275 A JP 2016532275A JP 6475719 B2 JP6475719 B2 JP 6475719B2
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- piezoelectric ceramic
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- phosphoric acid
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- 229910010293 ceramic material Inorganic materials 0.000 title claims description 44
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims description 59
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 51
- 229910052698 phosphorus Inorganic materials 0.000 claims description 50
- 239000011574 phosphorus Substances 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 40
- 238000005245 sintering Methods 0.000 claims description 34
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 26
- 239000011734 sodium Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 12
- 229910019142 PO4 Inorganic materials 0.000 claims description 11
- 239000010452 phosphate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 10
- 238000005266 casting Methods 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000005469 granulation Methods 0.000 claims description 7
- 230000003179 granulation Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000010298 pulverizing process Methods 0.000 claims description 7
- 229910002367 SrTiO Inorganic materials 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-L Phosphate ion(2-) Chemical compound OP([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-L 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-M dihydrogenphosphate Chemical compound OP(O)([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-M 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 2
- -1 phosphoric acid compound Chemical class 0.000 claims description 2
- 150000003016 phosphoric acids Chemical class 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 238000007792 addition Methods 0.000 description 20
- 230000028161 membrane depolarization Effects 0.000 description 15
- 238000009413 insulation Methods 0.000 description 7
- 235000019796 monopotassium phosphate Nutrition 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- 238000000386 microscopy Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 238000005056 compaction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 3
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052816 inorganic phosphate Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Description
x(Bi0.5Na0.5)TiO3−yBaTiO3−zSrTiO3
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦0.07、
好ましくは、0<x<1、0.1<y<0.25、0≦z≦0.07、
より好ましくは、0<x<1、0.1≦y≦0.20、0≦z≦0.03、
または
x(Bi0.5Na0.5)TiO3−yBaTiO3−zCaTiO3
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦0.05、
好ましくは、0<x<1、0.1<y<0.25、0≦z≦0.05、
より好ましくは、0<x<1、0.1≦y≦0.20、0≦z≦0.02、
または
x(Bi0.5Na0.5)TiO3−y(Bi0.5K0.5)TiO3−zBaTiO3
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦1、
好ましくは、0<x<1、0.1<y<0.3、0≦z≦0.15、
より好ましくは、0<x<1、0.1≦y≦0.24、0≦z≦0.05
のチタン酸ビスマスナトリウム系の無鉛圧電セラミック材料に基づく。
x(Bi0.5Na0.5)TiO3−yBaTiO3−zSrTiO3
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦0.07、
好ましくは、0<x<1、0.1<y<0.25、0≦z≦0.07、
より好ましくは、0<x<1、0.1≦y≦0.20、0≦z≦0.03、
または
x(Bi0.5Na0.5)TiO3−yBaTiO3−zCaTiO3
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦0.05、
好ましくは、0<x<1、0.1<y<0.25、0≦z≦0.05、
より好ましくは、0<x<1、0.1≦y≦0.20、0≦z≦0.02、
または
x(Bi0.5Na0.5)TiO3−y(Bi0.5K0.5)TiO3−zBaTiO3、
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦1、
好ましくは、0<x<1、0.1<y<0.3、0≦z≦0.15、
より好ましくは、0<x<1、0.1≦y≦0.24、0≦z≦0.05
のチタン酸ビスマスナトリウム(BST)系の無鉛圧電セラミック材料であって、圧電セラミック材料中のリンの濃度が100〜2000ppmであるような量でリン酸材料を添加することを特徴とする、無鉛圧電セラミック材料によって目的が達成される。
x(Bi0.5Na0.5)TiO3−yBaTiO3−zSrTiO3
式中、y≧0.1およびx+y+z=1、または
x(Bi0.5Na0.5)TiO3−yBaTiO3−zCaTiO3
式中、y≧0.1およびx+y+z=1、または
x(Bi0.5Na0.5)TiO3−y(Bi0.5K0.5)TiO3−zBaTiO3
式中、y≧0.1およびx+y+z=1
を有するように具体化され、圧電セラミック材料中のリンの濃度が100〜2000ppmであるような量でリン酸材料の添加が行われる。
・基本組成の原料混合物を製造するステップと、
・基本組成のか焼物を製造するステップと、
・か焼物を微粉砕するステップと、
・特にスプレー造粒によって粒状物を製造する、または多層もしくは「同時焼成」プロセス用流延スラリーを製造するステップと、
・標準大気中で焼結することを含む既知の様式でさらに処理するステップと
を含むように具体化されることが好ましい。
本発明は、さらにまた、前述の基本組成のチタン酸ビスマスナトリウム(BST)系の圧電セラミック材料でのリン酸材料を使用して、巨大な粒成長を低減し、かつ均一で微粒子状の構造を達成することに関し、ここで、リン酸材料は、圧電セラミック材料中のリンの濃度が100〜2000ppm、特に250〜2000ppm、より好ましくは270〜1800ppmであるような量で使用される。本発明は、例示の実施形態および比較実験の記載に基づいてより詳細に以下に説明される。
FM 微粉砕
G 造粒中の添加
VS フィルム製造のための有機スラリー化の間の添加
0 処理することができない材料
1 微粒子状の均一構造
2 不均一構造、巨大な粒成長
3 粗粒子状の構造
・それぞれの焼結温度での曲線形状の強いばらつき、
・焼結温度のばらつきの際の曲線形状の強いばらつき、および
・より高い焼結温度での極めて乱れた共振挙動。
基本組成0.85(Bi0.5Na0.5)TiO3−0.12BaTiO3−0.03SrTiO3をフローチャート(図1)にしたがって処理し、
・リン酸分散剤を微粉砕の間に添加し(PE169、製造者Akzo Nobel)、
・またはリン酸二水素カリウムを造粒中にバインダーへの添加によって導入した。
表2によるサンプル3、4、5b、6および2nは、本発明による変更のさらなる例であり、それは、基本組成0.85(Bi0.5Na0.5)TiO3−0.12BaTiO3−0.03SrTiO3の大規模工業プロセスにおいて適用可能である。
表2は、本発明によるさらなる例として、BaTiO3およびSrTiO3の割合に関する、基本組成x(Bi0.5Na0.5)TiO3−yBaTiO3−zSrTiO3のばらつきを含む。
Claims (13)
- 基本組成
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zSrTiO3
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦0.07、
または
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zCaTiO3
式中、x+y+z=1
および0<x<1、0<y<1、0≦z≦0.05
のチタン酸ビスマスナトリウム(BST)系の無鉛圧電セラミック材料であって、
圧電セラミック材料中のリンの濃度が250〜2000ppmであるような量でリン酸材料を添加されていることを特徴とし、前記ppm(parts per million)は、圧電セラミック組成の全質量に対するリンの質量に関し、
前記リン酸材料は、リン酸水素塩、またはリン酸二水素塩である無鉛圧電セラミック材料。 - 基本組成は、
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zSrTiO3
式中、y≧0.1およびx+y+z=1、または
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zCaTiO3
式中、y≧0.1およびx+y+z=1
である、請求項1に記載のチタン酸ビスマスナトリウム(BST)系の無鉛圧電セラミック材料。 - リン酸化合物は、KH2PO4、及び(NH4)H2PO4からなる群から選択されることを特徴とする、請求項1又は2に記載の無鉛圧電セラミック材料。
- 無鉛圧電セラミック材料中のリンの濃度が270〜1800ppmであるような量でリン酸材料が添加されることを特徴とする、請求項1〜3の少なくとも一項に記載の無鉛圧電セラミック材料。
- 基本組成は、添加剤を酸化物または複合ペロブスカイトの形態で含むことを特徴とする、請求項1〜4のいずれか一項に記載の無鉛圧電セラミック材料。
- 先行する請求項1〜5のいずれか一項に記載の無鉛圧電セラミック材料を製造する方法であって、
以下のステップ:
・基本組成の原料混合物を製造するステップと、
・基本組成のか焼物を製造するステップと、
・か焼物を微粉砕するステップと、
・スプレー造粒によって粒状物を製造する、または、多層もしくは「同時焼成」プロセス用流延スラリーを製造するステップと、
・標準大気中で焼結することを含む処理をさらに行うステップと
を特徴とし、前記ステップは記載順に行われ、リン酸添加剤は、微粉砕またはスプレー造粒の間、および/または、流延スラリーの調製の間に添加される、方法。 - 請求項1〜5のいずれか一項に記載の無鉛圧電セラミック材料系の圧電セラミック多層アクチュエータ。
- 少なくとも2つの電極を有する少なくとも1つの圧電セラミック体を有する、請求項1〜5のいずれか一項に記載の無鉛圧電セラミック材料系の圧電セラミック部品。
- 圧電セラミック体が圧電超音波振動子の形態である、請求項8に記載の無鉛圧電セラミック材料系の圧電セラミック部品。
- 巨大な粒成長を低減するための、基本組成
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zSrTiO3、式中、x+y+z=1および0<x<1、0<y<1、0≦z≦0.07、または
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zCaTiO3、式中、x+y+z=1および0<x<1、0<y<1、0≦z≦0.05
のチタン酸ビスマスナトリウム(BST)系の圧電セラミック材料でのリン酸材料の使用であって、リン酸材料は、圧電セラミック材料中のリンの濃度が250〜2000ppmである量で使用され、前記ppm(parts per million)は、圧電セラミック組成の全質量に対するリンの質量に関し、
前記リン酸材料は、リン酸水素塩、またはリン酸二水素塩であるリン酸材料の使用。 - リンの濃度が270〜1800ppmである量で使用される、請求項10に記載のリン酸材料の使用。
- 基本組成は、
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zSrTiO3
式中、y≧0.1およびx+y+z=1、または
x(Bi0.5Na0.5)TiO3 −yBaTiO3 −zCaTiO3
式中、y≧0.1およびx+y+z=1
である、請求項10又は11に記載の使用。 - リン酸化合物は、KH2PO4、及び(NH4)H2PO4からなる群から選択されることを特徴とする、請求項10〜12のいずれか一項に記載の使用。
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