JP6471650B2 - Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ - Google Patents

Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ Download PDF

Info

Publication number
JP6471650B2
JP6471650B2 JP2015167948A JP2015167948A JP6471650B2 JP 6471650 B2 JP6471650 B2 JP 6471650B2 JP 2015167948 A JP2015167948 A JP 2015167948A JP 2015167948 A JP2015167948 A JP 2015167948A JP 6471650 B2 JP6471650 B2 JP 6471650B2
Authority
JP
Japan
Prior art keywords
substrate
active layer
oxide film
soi wafer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015167948A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017045885A (ja
Inventor
祥泰 古賀
祥泰 古賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2015167948A priority Critical patent/JP6471650B2/ja
Priority to US15/241,431 priority patent/US9953859B2/en
Priority to FR1657890A priority patent/FR3040529B1/fr
Publication of JP2017045885A publication Critical patent/JP2017045885A/ja
Application granted granted Critical
Publication of JP6471650B2 publication Critical patent/JP6471650B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H10P90/1914—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10P14/3822—
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/69215—
    • H10P90/1916—
    • H10W10/181—
    • H10P50/283—
    • H10P90/1922—

Landscapes

  • Engineering & Computer Science (AREA)
  • Element Separation (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Formation Of Insulating Films (AREA)
JP2015167948A 2015-08-27 2015-08-27 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ Active JP6471650B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015167948A JP6471650B2 (ja) 2015-08-27 2015-08-27 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
US15/241,431 US9953859B2 (en) 2015-08-27 2016-08-19 SOI wafer manufacturing process and SOI wafer
FR1657890A FR3040529B1 (fr) 2015-08-27 2016-08-24 Procede de fabrication d'une tranche soi et tranche soi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015167948A JP6471650B2 (ja) 2015-08-27 2015-08-27 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ

Publications (2)

Publication Number Publication Date
JP2017045885A JP2017045885A (ja) 2017-03-02
JP6471650B2 true JP6471650B2 (ja) 2019-02-20

Family

ID=58018426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015167948A Active JP6471650B2 (ja) 2015-08-27 2015-08-27 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ

Country Status (3)

Country Link
US (1) US9953859B2 (enExample)
JP (1) JP6471650B2 (enExample)
FR (1) FR3040529B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6485406B2 (ja) * 2016-05-31 2019-03-20 株式会社Sumco Ｓｏｉウェーハの製造方法
CN106601615B (zh) * 2016-12-27 2020-05-15 上海新傲科技股份有限公司 提高键合强度的退火方法
TWI768957B (zh) * 2021-06-08 2022-06-21 合晶科技股份有限公司 複合基板及其製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3217089B2 (ja) * 1991-08-23 2001-10-09 富士通株式会社 Ｓｏｉウェハおよびその製造方法
JPH0878644A (ja) * 1994-09-02 1996-03-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP2001244262A (ja) * 2000-03-02 2001-09-07 Toshiba Corp 半導体装置の製造方法
JP2006005341A (ja) * 2004-05-19 2006-01-05 Sumco Corp 貼り合わせｓｏｉ基板およびその製造方法
CN102592977B (zh) * 2007-06-20 2015-03-25 株式会社半导体能源研究所 半导体装置的制造方法
JP2009076879A (ja) * 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP5365057B2 (ja) * 2008-04-11 2013-12-11 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造方法
JP5548395B2 (ja) * 2008-06-25 2014-07-16 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5865057B2 (ja) * 2011-12-19 2016-02-17 株式会社半導体エネルギー研究所 半導体基板の再生方法、及びｓｏｉ基板の作製方法

Also Published As

Publication number Publication date
FR3040529A1 (enExample) 2017-03-03
FR3040529B1 (fr) 2019-11-01
US20170062267A1 (en) 2017-03-02
JP2017045885A (ja) 2017-03-02
US9953859B2 (en) 2018-04-24

Similar Documents

Publication Publication Date Title
KR102082191B1 (ko) 에피택셜 웨이퍼, 접합 웨이퍼 및 이들의 제조 방법
USRE49657E1 (en) Epitaxial wafer manufacturing method and epitaxial wafer
JP6680378B2 (ja) Ｓｏｉウェーハ
JP6471650B2 (ja) Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
JP6442818B2 (ja) シリコンウェーハおよびその製造方法
JP6524862B2 (ja) Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
CN108885998B (zh) 外延晶圆的制造方法及外延晶圆
JP6485406B2 (ja) Ｓｏｉウェーハの製造方法
JP6248458B2 (ja) 貼り合わせウェーハの製造方法および貼り合わせウェーハ
JP6303321B2 (ja) 貼り合わせウェーハの製造方法および貼り合わせウェーハ
CN112514036A (zh) 外延硅晶片的制造方法及外延硅晶片
US20020098664A1 (en) Method of producing SOI materials
US20120289036A1 (en) Surface dose retention of dopants by pre-amorphization and post implant passivation treatments
CN113454756A (zh) 半导体外延晶片及其制造方法
JPH05259074A (ja) 半導体薄膜の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181002

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180928

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181225

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190107

R150 Certificate of patent or registration of utility model

Ref document number: 6471650

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250