JP6466326B2 - 最適形状を有するcmos撮像素子および写真植字によってそのような素子を生産するための方法 - Google Patents
最適形状を有するcmos撮像素子および写真植字によってそのような素子を生産するための方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 38
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910017214 AsGa Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- QKEOZZYXWAIQFO-UHFFFAOYSA-M mercury(1+);iodide Chemical compound [Hg]I QKEOZZYXWAIQFO-UHFFFAOYSA-M 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims 2
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- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
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Description
− 単一の基板上に生成され、行と列に配列された画素グループを含む画像ゾーンであって、一列当たりの画素数は、すべての画素列に対して一様ではなく、各画素は、撮像素子によって受信された光子放射線の関数として生成される電荷を捕集する電荷捕集要素を含む、画像ゾーンと、
− 行ごとに画素をリンクする行伝導体と、
− 列ごとに画素をリンクする列伝導体と、
− 行伝導体にリンクされ、各画素行の個別のアドレス指定を可能にする行アドレス指定ブロックと、
− 列伝導体にリンクされ、行アドレス指定ブロックによって選択された行の画素によって捕集された電荷の読み取りを可能にする列読取ブロックであって、画像ゾーンの周辺に位置する、列読取ブロックと
を含み、
行アドレス指定ブロックおよび列読取ブロックは、画像ゾーンと同じ基板上に生成される、撮像素子である。
− 基板上に生成され、行と列に配列された画素グループを含む画像ゾーンであって、一列当たりの画素数は、すべての画素列に対して一様ではなく、各画素は、撮像素子によって受信された光子放射線の関数として生成される電荷を捕集する電荷捕集要素を含む、画像ゾーンと、
− 行ごとに画素をリンクする行伝導体と、
− 列ごとに画素をリンクする列伝導体と、
− 行伝導体にリンクされ、各画素行の個別のアドレス指定を可能にする行アドレス指定ブロックと、
− 列伝導体にリンクされ、行アドレス指定ブロックによって選択された行の画素によって捕集された電荷の読み取りを可能にする列読取ブロックであって、画像ゾーンの周辺に位置する、列読取ブロックと
を含み、
行アドレス指定ブロックおよび列読取ブロックは、画像ゾーンと同じ基板上に生成される、方法であり、
少なくとも1つのマスクセットを通じて、半導体ウエハの表面がゾーンごとに放射線に露光されるステップを含み、少なくとも1つのマスクセットは、半導体ウエハの表面上に様々なパターンをフォトリソグラフィによって生成することができるように構成され、画像ゾーンは、半導体ウエハの表面上での互いに隣接するパターンの連続生成によって得られ、こうして得られた画像ゾーンは、10cm2以上の表面積を呈することを特徴とし、
実装されるパターンの数は、厳密に1超15未満であることも特徴とする方法にも関する。
Claims (15)
- 基板を形成する半導体ウエハ(22)上に撮像素子をフォトリソグラフィによって生産するための方法によって得られる撮像素子であって、センサは、
− 前記基板上に生成され、行と列に配列された画素(24)グループを含む画像ゾーン(23)であって、一列当たりの画素数は、すべての前記画素列に対して一様ではなく、各画素(24)は、前記撮像素子によって受信された光子放射線の関数として生成される電荷を捕集する電荷捕集要素を含む、画像ゾーン(23)と、
− 行ごとに前記画素をリンクする行伝導体(Xi、XRAZi)と、
− 列ごとに前記画素をリンクする列伝導体(Yj)と、
− 前記行伝導体(Xi、XRAZi)にリンクされ、各画素行の個別のアドレス指定を可能にする行アドレス指定ブロック(12)と、
− 前記列伝導体(Yj)にリンクされ、前記行アドレス指定ブロック(12)によって選択された前記行の前記画素(24)によって捕集された前記電荷の読み取りを可能にする列読取ブロック(13)であって、前記画像ゾーン(23)の周辺に位置する、列読取ブロック(13)と
を含み、
前記行アドレス指定ブロック(12)および前記列読取ブロック(13)は、前記画像ゾーンと同じ基板(22)上に生成され、
前記方法は、
少なくとも2つのマスクセットを通じて、前記半導体ウエハ(22)の表面がゾーンごとに放射線に露光されるステップを含み、各マスクセットは、いくつかのマスクを含み、全く同一のマスクセットの各マスクは、いくつかの領域を含み、各領域は、特定のパターンに対応し、前記少なくとも2つのマスクセットは、前記半導体ウエハ(22)の前記表面上に様々なパターンをフォトリソグラフィによって生成することができるように構成され、前記画像ゾーンは、前記半導体ウエハの前記表面上での互いに隣接するパターンの連続生成によって得られ、こうして得られた前記画像ゾーン(23)は、10cm2以上の表面積を呈することを特徴とし、
実装されるパターンの数は、厳密に1超15未満であることも特徴とし、
前記行アドレス指定ブロック(12)は、前記画像ゾーン(23)の前記周辺に位置し、いくつかの行アドレス指定ブロック(12)は、前記画素行に平行であり、いくつかの行アドレス指定ブロック(12)は、前記画素行および前記画素列に対して傾斜しており、前記行伝導体は、前記基板の第1の面(金属層)上に形成され、前記センサは、前記基板の第2の面(金属層)上に形成された制御バスと、前記画像ゾーン(23)に形成された金属孔(62)とをさらに含み、前記制御バスは、前記画素列に平行に配向され、前記行アドレス指定ブロック(12)にリンクされ、前記金属孔(62)は、各行伝導体(X i 、X RAZi )を前記制御バスのうちの1つにリンクする、撮像素子。 - 少なくとも2つの列読取ブロック(13)は、異なるランクの行に属する画素(24)と接触する、請求項1に記載の撮像素子。
- 前記一列当たりの画素数は、前記画像ゾーン(23)の周辺画素が少なくとも5つの辺を含む多角形を実質的に形成するように適合される、請求項1または2に記載の撮像素子。
- 前記多角形は、20未満の数の辺を含む、請求項3に記載の撮像素子。
- 前記画像ゾーン(23)の周辺画素は、正八角形を実質的に形成する、請求項3に記載の撮像素子。
- 前記列読取ブロック(13)は、複数のグループにまとめることができ、各グループは、前記多角形の前記辺(23D、23E、23F)のうちの1つに平行である、請求項3〜5のいずれか一項に記載の撮像素子。
- 第1のグループの前記列読取ブロック(13)は、正八角形の第1の辺(23D)上に位置し、第2のグループの前記列読取ブロック(13)は、前記第1の辺に隣接する第2の辺(23E)上に位置し、第3のグループの前記列読取ブロック(13)は、前記第2の辺に隣接する第3の辺(23F)上に位置する、請求項5または6に記載の撮像素子。
- 前記画像ゾーン(23)の周辺画素は、凸状六角形を実質的に形成し、その第1の辺は、前記画素行に平行であり、両方とも前記第1の辺に隣接する第2および第3の辺は、前記画素列に平行であり、前記第2および前記第3の辺にそれぞれ隣接する第4および第5の辺は、前記画素行および前記画素列に対して傾斜しており、前記第4および前記第5の辺に隣接する第6の辺は、前記画素行に平行である、請求項1〜4のいずれか一項に記載の撮像素子。
- 前記センサの各画素(24)は、前記撮像素子によって受信された放射線の関数として電荷を生成する感光要素(Dp(i,j))を含む、請求項1〜8のいずれか一項に記載の撮像素子。
- 前記センサ(21、61、91、111、191、211)と光学的に結合され、X線またはガンマ線放射線を前記感光要素(Dp(i,j))の感度が高い放射線に変換することを可能にするシンチレータをさらに含む、請求項9に記載の撮像素子。
- 各画素(24)の前記電荷捕集要素は、電荷を捕集するための電極を含む、請求項1〜8のいずれか一項に記載の撮像素子。
- 前記センサの前記画素(24)の電荷を捕集するために前記電極と電気的に結合された光伝導体をさらに含み、前記光伝導体は、電荷へのX線またはガンマ線放射線の変換を可能にする、請求項11に記載の撮像素子。
- 前記光伝導体は、例えば、テルル化カドミウム(CdTe)、テルル化物、カドミウムおよび亜鉛を含む化合物(CdxTeyZnz)、ヒ化ガリウム(AsGa)、ヨウ化水銀(HgI2)、酸化鉛(PbO)、ヨウ化鉛(PbI2)またはセレニウム(Se)で作られている、請求項12に記載の撮像素子。
- 各行アドレス指定ブロック(12)および各列読取ブロック(13)は、前記行伝導体(Xi、XRAZi)と前記列伝導体(Yj)を外部の回路にリンクすることができる接続パッド(121、131、921、922)を含み、前記接続パッドは、1つまたは複数の線状で各ブロック(12、13)に位置合わせされる、請求項1〜13のいずれか一項に記載の撮像素子。
- 各ブロック(12、13)の接続パッド(121、131、921、922)は、前記基板(22)の縁部と位置合わせされる、請求項14または4〜7のいずれか一項に記載の撮像素子。
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FR1256469A FR2993097B1 (fr) | 2012-07-05 | 2012-07-05 | Dispositif imageur cmos a geometrie optimisee et procede de realisation d'un tel dispositif par photocomposition |
FR1256469 | 2012-07-05 | ||
PCT/EP2013/064320 WO2014006214A1 (fr) | 2012-07-05 | 2013-07-05 | Dispositif imageur cmos à géométrie optimisée et procédé de réalisation d'un tel dispositif par photocomposition. |
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CN104620386A (zh) | 2015-05-13 |
JP2015528206A (ja) | 2015-09-24 |
EP2870631A1 (fr) | 2015-05-13 |
US20150303228A1 (en) | 2015-10-22 |
KR20150067125A (ko) | 2015-06-17 |
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