JP6461441B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6461441B1 JP6461441B1 JP2018545674A JP2018545674A JP6461441B1 JP 6461441 B1 JP6461441 B1 JP 6461441B1 JP 2018545674 A JP2018545674 A JP 2018545674A JP 2018545674 A JP2018545674 A JP 2018545674A JP 6461441 B1 JP6461441 B1 JP 6461441B1
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- Prior art keywords
- semiconductor device
- insulating substrate
- case material
- recess
- semiconductor element
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Abstract
Description
<半導体装置の構成>
図1は本発明の実施の形態1に係る半導体装置の基本構造を示す断面模式図である。図2は、図1に示した半導体装置の部分断面模式図である。図1および図2を参照しながら、本発明の実施の形態1に係る半導体装置の構成について説明する。図1および図2に示した半導体装置100は、たとえば産業用、自動車用などに用いられる半導体パワーモジュールである。
上述した半導体装置100は、主表面を有する絶縁基板41と、半導体素子2と、ケース材5と、封止材料としての封止樹脂1とを備える。半導体素子2は、絶縁基板41の主表面上に配置される。ケース材5は、半導体素子2を囲み、絶縁基板41に接続される。封止樹脂1は、ケース材5と絶縁基板41とにより囲まれた内部領域に配置され、半導体素子2を囲む。ケース材5は、絶縁基板41と接続された接続部に連なり、内部領域に面する凹部51を含む。凹部51は、絶縁基板41の主表面に面する内壁部分としての対向面61を含む。絶縁基板41の主表面(第1回路基板31の上面)から内壁部分としての対向面61までの距離H1は、主表面から半導体素子2の上面2aまでの距離H2より大きい。また、異なる観点から言えば、図1および図2に示すように、本実施の形態の半導体装置100では、絶縁基板41が金属ベース板3の上に搭載される。半導体素子2が絶縁基板41の上に実装される。半導体素子2を取り囲むようにケース材5が設けられる。このような半導体装置100において、ケース材5の底面に、半導体素子2の上面2aよりも高い位置に対向面61が存在する凹部51が形成されている。
図6は、図1に示した半導体装置の第1の変形例を示す部分断面模式図である。図6に示した半導体装置100は、基本的には図1および図2に示した半導体装置と同様の構成を備えるが、電極端子7および第1回路基板31の形状が図1および図2に示した半導体装置100と異なっている。すなわち、図6に示した半導体装置100では、電極端子7および第1回路基板31のそれぞれにおける封止樹脂1と接触する部分の表面に、封止樹脂1との接着性を向上させるために、微小な凹凸が設けられた凹凸部11、12が形成されている。電極端子7では、配線材4bが接続された接続部に隣接する位置に凹凸部12が形成されている。第1回路基板31では、凹部51の内部に位置する領域に凹凸部11が形成されている。このような凹凸部11、12が形成されることで、封止樹脂1と電極端子7および第1回路基板31との密着性が向上する。
<半導体装置の構成>
図8は本発明の実施の形態2に係る半導体装置200の基本構造を示す断面模式図である。図8を参照しながら、本発明の実施の形態2に係る半導体装置200の構成について説明する。
図8に示した半導体装置200は、基本的には図1に示した半導体装置100と同様の効果を得ることができる。さらに、図8に示した半導体装置200において、ケース材5に設けられた貫通孔9は凹部51の対向面61からケース材5の上面まで到達するように、ケース材5を貫通している。つまりケース材5には、凹部51内からケース材5の表面における凹部51以外の領域にまで延びる貫通孔9が形成されている。貫通孔9が形成されていることで、凹部51への封止樹脂1の充填性を向上させることができる。以下、図9を用いて説明する。図9は、図8に示した半導体装置の製造工程における部分断面模式図であって、当該半導体装置における貫通孔9の効果を説明するための模式図である。
ここで貫通孔9は凹部51内の未充填部71に存在する空気層を凹部51の外部へ排出することができれば、任意の形状を採用し得る。貫通孔9は、図8および図9に示すように対向面61からケース材5の上側に必ずしも存在する必要は無い。図10は、図8に示した半導体装置の第1の変形例を示す部分断面模式図であって、貫通孔9の別の構成例を示す断面模式図である。なお、図10は図9に対応し、半導体装置の製造工程において封止樹脂1をケース材5内周側の空間に充填している時の状態を示している。
<半導体装置の構成>
図12は本発明の実施の形態3に係る半導体装置300の基本構造を示す断面模式図である。図12を参照しながら、本発明の実施の形態3に係る半導体装置300の構成について説明する。
図12に示した半導体装置300は、基本的には図8に示した半導体装置と同様の効果を得ることができる。また、図12に示した半導体装置300では、凹部51において第1回路基板31と対向する内壁部分としての対向面61が、絶縁基板41の主表面(たとえば第1回路基板31の表面)に対して傾斜した平面となっている。そのため凹部51内において発生した未充填部71が対向面61に沿って凹部51外へ排出されやすい。この結果、凹部51内に未充填部71が残存する可能性を低減でき、信頼性の高い半導体装置を提供できる。
図14は図12に示した半導体装置300の変形例を示す部分断面模式図である。図14を参照しながら、本発明の実施の形態3の変形例に係る半導体装置の構成について説明する。なお、図14は図13に対応する。
Claims (8)
- 主表面を有する絶縁基板と、
前記絶縁基板の前記主表面上に配置された半導体素子と、
前記半導体素子を囲み、前記絶縁基板に接続されたケース材と、
前記ケース材と前記絶縁基板とにより囲まれた内部領域に配置され、前記半導体素子を囲む封止材料と、
前記半導体素子に接続されており、かつ前記ケース材と一体的に形成されている電極端子とを備え、
前記ケース材は、前記絶縁基板と接続された接続部に連なり、前記内部領域に面する凹部を含み、
前記凹部は、前記絶縁基板の前記主表面に面する内壁部分を含み、
前記内壁部分は、前記ケース材の外周側に位置する端部および内周側に位置する端部を有し、
前記電極端子は、前記絶縁基板の前記主表面に沿った方向に延びる第1部分と、前記第1部分と交差する方向に延びる第2部分とを有し、
前記絶縁基板の前記主表面から前記内壁部分の前記内周側に位置する前記端部までの距離は、前記主表面から前記半導体素子の上面までの距離より大きく、
前記内壁部分は、前記第1部分と前記主表面との間に配置されている、半導体装置。 - 前記ケース材には、前記凹部内から前記ケース材の表面における前記凹部以外の領域にまで延びる貫通孔が形成されている、請求項1に記載の半導体装置。
- 前記内壁部分は、前記絶縁基板の前記主表面と平行である、請求項1または請求項2に記載の半導体装置。
- 前記内壁部分は、前記外周側に位置する前記端部から前記内周側に位置する前記端部に向けて、徐々に前記絶縁基板の前記主表面からの距離が大きくなるように、前記絶縁基板の前記主表面に対して傾斜している、請求項1または請求項2に記載の半導体装置。
- 前記内壁部分の前記外周側に位置する前記端部と前記内周側に位置する前記端部との間の表面は曲面状である、請求項4に記載の半導体装置。
- 前記ケース材において、前記半導体素子との間の距離が最も短い領域に前記凹部が形成されている、請求項1〜請求項5のいずれか1項に記載の半導体装置。
- 前記ケース材は前記絶縁基板に固定されている、請求項1〜請求項6のいずれか1項に記載の半導体装置。
- 前記封止材料はエポキシ樹脂またはシリコーン樹脂を含む、請求項1〜請求項7のいずれか1項に記載の半導体装置。
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- 2018-03-08 JP JP2018545674A patent/JP6461441B1/ja active Active
- 2018-03-08 WO PCT/JP2018/008938 patent/WO2019008828A1/ja active Application Filing
- 2018-03-08 CN CN201880040224.1A patent/CN110800105A/zh active Pending
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US11031355B2 (en) | 2021-06-08 |
JPWO2019008828A1 (ja) | 2019-07-04 |
CN110800105A (zh) | 2020-02-14 |
DE112018003419T5 (de) | 2020-08-20 |
US20200286840A1 (en) | 2020-09-10 |
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