JP6458759B2 - 応力緩和構造体及び熱電変換モジュール - Google Patents

応力緩和構造体及び熱電変換モジュール Download PDF

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Publication number
JP6458759B2
JP6458759B2 JP2016070137A JP2016070137A JP6458759B2 JP 6458759 B2 JP6458759 B2 JP 6458759B2 JP 2016070137 A JP2016070137 A JP 2016070137A JP 2016070137 A JP2016070137 A JP 2016070137A JP 6458759 B2 JP6458759 B2 JP 6458759B2
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Japan
Prior art keywords
stress relaxation
relaxation structure
thermoelectric conversion
metal foil
conductor
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Expired - Fee Related
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JP2016070137A
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English (en)
Japanese (ja)
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JP2017183566A (ja
JP2017183566A5 (enExample
Inventor
雄亮 保田
雄亮 保田
聡悟 西出
聡悟 西出
宮内　昭浩
昭浩 宮内
千恵美 窪田
千恵美 窪田
藤原　伸一
伸一 藤原
武司 島田
武司 島田
秀樹 山浦
秀樹 山浦
直人 深谷
直人 深谷
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Proterial Ltd
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Hitachi Metals Ltd
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Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP2016070137A priority Critical patent/JP6458759B2/ja
Priority to US15/414,139 priority patent/US20170288116A1/en
Priority to EP17153473.8A priority patent/EP3226314B1/en
Publication of JP2017183566A publication Critical patent/JP2017183566A/ja
Publication of JP2017183566A5 publication Critical patent/JP2017183566A5/ja
Application granted granted Critical
Publication of JP6458759B2 publication Critical patent/JP6458759B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2016070137A 2016-03-31 2016-03-31 応力緩和構造体及び熱電変換モジュール Expired - Fee Related JP6458759B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016070137A JP6458759B2 (ja) 2016-03-31 2016-03-31 応力緩和構造体及び熱電変換モジュール
US15/414,139 US20170288116A1 (en) 2016-03-31 2017-01-24 Stress Relaxation Structure and Thermoelectric Conversion Module
EP17153473.8A EP3226314B1 (en) 2016-03-31 2017-01-27 Thermoelectric conversion module comprising stress relaxation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016070137A JP6458759B2 (ja) 2016-03-31 2016-03-31 応力緩和構造体及び熱電変換モジュール

Publications (3)

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JP2017183566A JP2017183566A (ja) 2017-10-05
JP2017183566A5 JP2017183566A5 (enExample) 2018-04-05
JP6458759B2 true JP6458759B2 (ja) 2019-01-30

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JP2016070137A Expired - Fee Related JP6458759B2 (ja) 2016-03-31 2016-03-31 応力緩和構造体及び熱電変換モジュール

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Country Link
US (1) US20170288116A1 (enExample)
EP (1) EP3226314B1 (enExample)
JP (1) JP6458759B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3703140B1 (en) * 2017-10-24 2023-11-22 Resonac Corporation Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module
JP7248091B2 (ja) * 2021-02-03 2023-03-29 三菱マテリアル株式会社 熱電変換モジュール、および、熱電変換モジュールの製造方法
CN117501859A (zh) * 2021-06-30 2024-02-02 株式会社村田制作所 热电转换器件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117249A (en) * 1979-03-05 1980-09-09 Hitachi Ltd Semiconductor supporting electrode
JPH01183139A (ja) * 1988-01-16 1989-07-20 Sumitomo Special Metals Co Ltd 放熱基板
JPH0780272B2 (ja) * 1989-12-12 1995-08-30 住友特殊金属株式会社 熱伝導複合材料
ATE142371T1 (de) * 1989-12-12 1996-09-15 Sumitomo Spec Metals Verfahren zur herstellung eines wärmeleitenden mischmaterial
US5510650A (en) * 1994-09-02 1996-04-23 General Motors Corporation Low mechanical stress, high electrical and thermal conductance semiconductor die mount
JP4062994B2 (ja) * 2001-08-28 2008-03-19 株式会社豊田自動織機 放熱用基板材、複合材及びその製造方法
US20040010170A1 (en) * 2002-01-09 2004-01-15 Vickers George H. Para-xylene and ethylbenzene separation from mixed C8 aromatics
JP2003229609A (ja) * 2002-02-05 2003-08-15 Sango Co Ltd 熱電変換モジュール用の熱応力緩和材とその製造方法と熱電変換装置
US7663486B2 (en) * 2006-06-16 2010-02-16 Motorola, Inc. RFID tag user memory indication
JP2008010764A (ja) * 2006-06-30 2008-01-17 Chugoku Electric Power Co Inc:The 熱電変換装置
JP2010093009A (ja) * 2008-10-07 2010-04-22 Sumitomo Chemical Co Ltd 熱電変換モジュールおよび熱電変換素子
JP5733678B2 (ja) * 2010-12-24 2015-06-10 日立化成株式会社 熱電変換モジュールおよびその製造方法
JP6064886B2 (ja) 2012-12-26 2017-01-25 株式会社豊田中央研究所 熱伝導性応力緩和構造体
US20140261608A1 (en) * 2013-03-14 2014-09-18 Gmz Energy, Inc. Thermal Interface Structure for Thermoelectric Devices
JP2014183256A (ja) 2013-03-21 2014-09-29 Denso Corp 接合体およびこれを用いた半導体装置、ならびにそれらの製造方法

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Publication number Publication date
EP3226314B1 (en) 2018-08-08
EP3226314A3 (en) 2017-10-25
JP2017183566A (ja) 2017-10-05
EP3226314A2 (en) 2017-10-04
US20170288116A1 (en) 2017-10-05

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