JP6450772B2 - コーティング組成物、その製造方法およびその使用 - Google Patents
コーティング組成物、その製造方法およびその使用 Download PDFInfo
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- JP6450772B2 JP6450772B2 JP2016550803A JP2016550803A JP6450772B2 JP 6450772 B2 JP6450772 B2 JP 6450772B2 JP 2016550803 A JP2016550803 A JP 2016550803A JP 2016550803 A JP2016550803 A JP 2016550803A JP 6450772 B2 JP6450772 B2 JP 6450772B2
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- 239000008199 coating composition Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title description 36
- 239000002904 solvent Substances 0.000 claims description 130
- 229910052727 yttrium Inorganic materials 0.000 claims description 83
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 73
- 239000002243 precursor Substances 0.000 claims description 44
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 21
- -1 alkoxy alcohol Chemical compound 0.000 claims description 16
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 14
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 claims description 14
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 14
- 108700031620 S-acetylthiorphan Proteins 0.000 claims description 11
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 9
- 238000009835 boiling Methods 0.000 claims description 9
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 9
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 8
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 6
- 238000009472 formulation Methods 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 3
- 229940116333 ethyl lactate Drugs 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 150000003903 lactic acid esters Chemical class 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 description 22
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 22
- 239000000243 solution Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 125000004043 oxo group Chemical group O=* 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 150000004703 alkoxides Chemical class 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- UQLDLKMNUJERMK-UHFFFAOYSA-L di(octadecanoyloxy)lead Chemical compound [Pb+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O UQLDLKMNUJERMK-UHFFFAOYSA-L 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002738 metalloids Chemical class 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- 150000003746 yttrium Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical class OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 150000003748 yttrium compounds Chemical class 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012669 liquid formulation Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/20—Diluents or solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
1mlのテトラヒドロフルフリルアルコール中において25mgのイットリウムオキソアルコキシド[Y5O(O−iPr)13]を撹拌することにより、溶液を作製する。当該溶液を、1:3の体積比においてエタノールで希釈する。当該溶液を、スピンコーティングによって酸化インジウム含有層に塗工する。酸化インジウム含有層上に存在するイットリウム含有コーティングを熱的に変換する。
実施例2:
実施例3:
比較例1:
比較例2:
比較例3:
Claims (13)
- イットリウムオキソアルコキシドの群から選択される少なくとも1種のイットリウム含有前駆体、溶媒A、および溶媒Aとは異なる溶媒Bから製造可能なコーティング組成物であって、20℃での溶媒Bの蒸気圧に対する20℃での溶媒Aの蒸気圧の比率が、
- 前記少なくとも1種の前駆体が、Y5O(O−iPr)13であることを特徴とする、請求項1に記載のコーティング組成物。
- 使用される全てのイットリウム含有前駆体の分率が、配合物の総質量に対して0.1〜10重量%であることを特徴とする、請求項1または請求項2に記載のコーティング組成物。
- 前記溶媒は、アルコール、アルコキシアルコール、ヒドロキシエーテル、ならびにカルボン酸エステルおよび乳酸エステルの群から選択されることを特徴とする、請求項1〜3のいずれか一項に記載のコーティング組成物。
- SATP条件下での2つの溶媒AおよびBの沸点の差が≧30℃であることを特徴とする、請求項1〜4のいずれか一項に記載のコーティング組成物。
- SATP条件下での溶媒Aの沸点が50〜140℃であることを特徴とする、請求項1〜5のいずれか一項に記載のコーティング組成物。
- 前記溶媒Aは、1−メトキシ−2−プロパノール、2−メトキシエタノール、酢酸ブチル、イソプロパノール、tert−ブタノール、およびエタノールからなる群より選択されることを特徴とする、請求項6に記載のコーティング組成物。
- SATP条件下での溶媒Bの沸点が100〜200℃であることを特徴とする、請求項1〜7のいずれか一項に記載のコーティング組成物。
- 前記溶媒Bは、1−ヘキサノール、シクロヘキサノール、テトラヒドロフルフリルアルコール、1−メトキシ−2−プロピルアセテート、および乳酸エチルからなる群より選択されることを特徴とする、請求項1〜8のいずれか一項に記載のコーティング組成物。
- 存在する溶媒の総体積に対して、溶媒Aの分率が75〜99体積%であり、溶媒Bの分率が1〜25重量%であることを特徴とする、請求項1〜9のいずれか一項に記載のコーティング組成物。
- 溶媒Aおよび溶媒Bに加えて、さらなる溶媒を含むことを特徴とする、請求項1〜10のいずれか一項に記載のコーティング組成物。
- イットリウムオキソアルコキシドの群から選択される少なくとも1種のイットリウム含有前駆体、溶媒A、該溶媒Aとは異なる溶媒B(ここで、20℃での溶媒Bの蒸気圧に対する20℃での溶媒Aの蒸気圧の比率は、
- 酸化イットリウム含有層を製造するための、請求項1〜11のいずれか一項に記載のコーティング組成物の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014202718.7 | 2014-02-14 | ||
DE102014202718.7A DE102014202718A1 (de) | 2014-02-14 | 2014-02-14 | Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung |
PCT/EP2015/052583 WO2015121183A1 (de) | 2014-02-14 | 2015-02-09 | Beschichtungszusammensetzung, verfahren zu ihrer herstellung und ihre verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017508835A JP2017508835A (ja) | 2017-03-30 |
JP6450772B2 true JP6450772B2 (ja) | 2019-01-09 |
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JP2016550803A Expired - Fee Related JP6450772B2 (ja) | 2014-02-14 | 2015-02-09 | コーティング組成物、その製造方法およびその使用 |
Country Status (9)
Country | Link |
---|---|
US (1) | US10308814B2 (ja) |
EP (1) | EP3105779A1 (ja) |
JP (1) | JP6450772B2 (ja) |
KR (1) | KR20160123324A (ja) |
CN (1) | CN106062936B (ja) |
DE (1) | DE102014202718A1 (ja) |
RU (1) | RU2680427C2 (ja) |
TW (1) | TWI635143B (ja) |
WO (1) | WO2015121183A1 (ja) |
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DE3875010T2 (de) * | 1987-07-31 | 1993-02-18 | Mitsubishi Materials Corp | Zusammensetzung und verfahren zur darstellung von metalloxid-gemischen. |
FR2659649B1 (fr) | 1990-03-16 | 1992-06-12 | Kodak Pathe | Preparation d'alkoxydes d'indium solubles dans les solvants organiques. |
US5645891A (en) * | 1994-11-23 | 1997-07-08 | Battelle Memorial Institute | Ceramic porous material and method of making same |
US6210649B1 (en) * | 1997-04-15 | 2001-04-03 | Massachusetts Institute Of Technology | Metal oxide catalysts for nitric oxide reduction |
US7132783B1 (en) * | 1997-10-31 | 2006-11-07 | Nanogram Corporation | Phosphor particles having specific distribution of average diameters |
WO2000033127A1 (fr) * | 1998-11-30 | 2000-06-08 | Teijin Limited | Dispositif a cristaux liquides et substrat conducteur transparent prefere |
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-
2014
- 2014-02-14 DE DE102014202718.7A patent/DE102014202718A1/de not_active Ceased
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2015
- 2015-02-09 EP EP15703571.8A patent/EP3105779A1/de not_active Withdrawn
- 2015-02-09 US US15/118,472 patent/US10308814B2/en not_active Expired - Fee Related
- 2015-02-09 CN CN201580008695.0A patent/CN106062936B/zh not_active Expired - Fee Related
- 2015-02-09 WO PCT/EP2015/052583 patent/WO2015121183A1/de active Application Filing
- 2015-02-09 KR KR1020167024541A patent/KR20160123324A/ko not_active Application Discontinuation
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CN106062936B (zh) | 2019-10-11 |
RU2016136695A (ru) | 2018-03-19 |
TW201542712A (zh) | 2015-11-16 |
DE102014202718A1 (de) | 2015-08-20 |
WO2015121183A1 (de) | 2015-08-20 |
JP2017508835A (ja) | 2017-03-30 |
KR20160123324A (ko) | 2016-10-25 |
CN106062936A (zh) | 2016-10-26 |
US20170174899A1 (en) | 2017-06-22 |
RU2016136695A3 (ja) | 2018-09-07 |
RU2680427C2 (ru) | 2019-02-21 |
TWI635143B (zh) | 2018-09-11 |
EP3105779A1 (de) | 2016-12-21 |
US10308814B2 (en) | 2019-06-04 |
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